Nuflare Technology, Inc.

Kabushiki Kaisha Toshiba

Nuflare Technology America, Inc.

Ntt Advanced Technology Corporation

Munehiro Ogasawara

Ryoichi Yoshikawa

Takanao Touya

Kazuhiko Inoue

Jun Takamatsu

Hiroshi Matsumoto

Atsushi Ando

Hirofumi Morita

Hitoshi Sunaoshi

Naoharu Shimomura

Shuichi Tamamushi

Hideo Inoue

Tomohiro Iijima

John Hartley

Riki Ogawa

Kazuyoshi Sugihara

Shusuke Yoshitake

Ken-Ichi Murooka

Shinsuke Nishimura

Kenji Ohtoshi

Katsuya Okumura

Takayuki Abe

Hideki Matsui

Masamitsu Itoh

Yuichiro Yamazaki

Katsuyuki Machida

Toru Tojo

Nobutaka Kikuiri

Takashi Nakamura

Masataka Shiratsuchi

Hiroko Nakamura

Kazunori Onoguchi

Noriaki Nakayamada

Steven D Golladay

Rieko Nishimura

Toru Koike

Kiyoshi Hattori

Itsuko Sakai

Kiminobu Akeno

Haruki Komano

Haruyuki Nomura

Satoshi Masuda

Hiroshi Yamashita

Nobuo Miyamoto

Yoji Ogawa

Kazuhiro Chiba

Souji Koikari

Kazuhiro Kishi

Teruaki Safu

Toshifumi Konishi

Takaaki Matsushima

Kazuhisa Kudo

Masaki Yano

Takuya Uemura

Tatsuya Murofushi

Yoshiaki Hattori

Naoharu Shimomaura

Hideo Wakamori

Hirokazu Yamada

A multi-electron beam image acquisition apparatus includes a first electromagnetic lens configured to focus multiple primary electron beams to form an image on a substrate, and a second electromagnetic lens configured to be able to variably adjust a peak position of a magnetic field distribution in a direction of a trajectory central axis of multiple secondary electron beams, and to focus the multiple secondary electron beams to form an image on either one of a detection surface of a detector and a position conjugate to the detection surface. The first electromagnetic lens focuses, to form an image, the multiple secondary electron beams before they are separated from the multiple primary electron beams, and the second electromagnetic lens is arranged between a separator which separates the multiple secondary electron beams and an image forming point on which the multiple secondary electron beams are focused by the first electromagnetic lens.

Multi-electron beam image acquisition apparatus, multi-electron beam inspection apparatus, and multi-electron beam image acquisition method

A blanking deflector according to an embodiment includes: a first electrode comprising a first insulator, a first material film coating all surfaces of the first insulator and having lower resistance than the first insulator, and a first low-resistance film coating part or all of surfaces of the first material film and having lower resistance than the first material film; and a second electrode comprising a second insulator, a second material film coating all surfaces of the second insulator and having lower resistance than the second insulator, and a second low-resistance film coating part or all of surfaces of the second material film and having lower resistance than the second material film, wherein the blanking deflector controls whether to irradiate a specimen with a charged particle beam by causing the charged particle beam to pass between the first electrode and the second electrode.

Drawing apparatus and deflector

In a charged particle beam writing method according to one embodiment, a deflector is caused to deflect a charged particle beam and a pattern is written by irradiating a substrate with the charged particle beam. The charged particle beam writing method includes calculating a charge amount distribution based on a charge amount of a beam irradiation region on the substrate immediately after irradiation with the charged particle beam and a diffusion coefficient for electric charge of the substrate, calculating a position shift distribution of the charged particle beam on the substrate based on the charge amount distribution, and correcting an irradiation position of the charged particle beam based on the position shift distribution.

Charged particle beam writing method, charged particle beam writing apparatus, and computer-readable recording medium

According to one aspect of the present invention, a multi-beam image acquisition apparatus, includes: an objective lens configured to image multiple primary electron beams on a substrate by using the multiple primary electron beams; a separator configured to have two or more electrodes for forming an electric field and two or more magnetic poles for forming a magnetic field and configured to separate multiple secondary electron beams emitted due to the substrate being irradiated with the multiple primary electron beams from trajectories of the multiple primary electron beams by the electric field and the magnetic field formed; a deflector configured to deflect the multiple secondary electron beams separated; a lens arranged between the objective lens and the deflector and configured to image the multiple secondary electron beams at a deflection point of the deflector; and a detector configured to detect the deflected multiple secondary electron beams.

Multi-beam image acquisition apparatus and multi-beam image acquisition method

Aberration corrector includes a lower electrode substrate to be formed therein with plural first passage holes having a first hole diameter and making multiple electron beams pass therethrough, and to be arranged thereon plural electrode sets each being plural electrodes of four or more poles, surrounding a first passage hole, for each of the plural first passage holes, and an upper electrode substrate above the lower one, to be formed therein with plural second passage holes making multiple electron beams pass therethrough, whose size from the top of the upper electrode substrate to the middle of way to the back side of the upper electrode substrate is a second hole diameter, and whose size from the middle to the back side is a third hole diameter larger than each of the first and second hole diameters, wherein a shield electrode is on inner walls of plural second passage holes.

Aberration corrector and multiple electron beam irradiation apparatus

A multi-charged particle beam irradiation apparatus includes a forming mechanism to form multiple charged particle beams, a multipole deflector array to individually deflect each beam of the multiple charged particle beams so that a center axis trajectory of each beam of the multiple charged particle beams may not converge in a region of the same plane orthogonal to the direction of a central axis of a trajectory of the multiple charged particle beams, and an electron optical system to irradiate a substrate with the multiple charged particle beams while maintaining a state where the multiple charged particle beams are not converged.

Multi-charged particle beam irradiation apparatus and multi-charged particle beam inspection apparatus

A multiple electron beam irradiation apparatus includes a shaping aperture array substrate to form multiple primary electron beams, a plurality of electrode array substrates stacked each to dispose thereon a plurality of electrodes each arranged at a passage position of each of the multiple primary electron beams, each of the multiple primary electron beams surrounded by an electrode of the plurality of electrodes when each of the multiple primary electron beams passes through the passage position, the first wiring and the second wiring applied with one of different electric potentials, and a stage to mount thereon a target object to be irradiated with the multiple primary electron beams having passed through the plurality of electrode array substrates, wherein, in each of the plurality of electrode array substrates, each of the plurality of electrodes is electrically connected to either one of the first wiring and the second wiring.

Multiple electron beams irradiation apparatus

A multiple electron beam irradiation apparatus includes a forming mechanism which forms multiple primary electron beams; a plurality of electrode substrates being stacked in each of which a plurality of openings of various diameter dimensions are formed, the plurality of openings being arranged at passage positions of the multiple primary electron beams, and through each of which a corresponding one of the multiple primary electron beams passes, the plurality of electrode substrates being able to adjust an image plane conjugate position of each of the multiple primary electron beams depending on a corresponding one of the various diameter dimensions; and a stage which is capable of mounting thereon a target object to be irradiated with the multiple primary electron beams having passed through the plurality of electrode substrates.

In one embodiment, a charged particle beam writing apparatus includes an emitter emitting a charged particle beam, a first aperture shaping the charged particle beam, a second aperture shaping the charged particle beam transmitted through the first aperture, a projection lens projecting the charged particle beam transmitted through the first aperture on the second aperture, an object lens focusing the charged particle beam transmitted through the second aperture, the object lens being a magnetic field-type lens, and an electrostatic lens performing focus correction of the charged particle beam in accordance with a surface height of a substrate that is a writing target. The electrostatic lens is disposed inside the object lens, a positive voltage is applied to an electrode of the electrostatic lens. A strength of a magnetic field of the object lens at an upper end of the electrode has a predetermined value or less.

Charged particle beam writing apparatus and charged particle beam writing method

A charged-particle beam apparatus is provided with a cathode to emit charged particle beams, an anode to propagate the charged particle beams emitted from the cathode in a sample surface direction, an aperture to propagate a charged particle beam passing through an opening at a predetermined position and of a predetermined shape, among the charged particle beams passing through the anode, in the sample surface direction, and a first electrode that is disposed between the anode and the aperture, and is set at a first electric potential of a polarity repelling a polarity of an ion generated due to collision of a charged particle beam.

Charged-particle beam apparatus, charged-particle beam writing apparatus, and charged-particle beam controlling method

Provided is a multiple electron beam inspection apparatus including: an irradiation source irradiating a substrate with multiple electron beams; a stage on which is cable of mounting the substrate; an electromagnetic lens provided between the irradiation source and the stage, the electromagnetic lens generating a lens magnetic field, the multiple electron beams being capable of passing through the lens magnetic field; an electrostatic lens provided in the lens magnetic field, the electrostatic lens including a plurality of through-holes and a plurality of electrodes, the plurality of through-holes having wall surfaces respectively, each of the multiple electron beams being capable of passing through the corresponding each of the plurality of through-holes, each of the plurality of electrodes provided on each of the wall surfaces of the plurality of through-holes, at least one of the through-holes provided apart from a central axis of trajectory of the multiple electron beams having a spiral shape; and a power source connected to the electrodes.

Multiple electron beam inspection apparatus with through-hole with spiral shape

A multiple-electron-beam irradiation apparatus includes a first electrostatic lens, configured using the substrate used as a bias electrode by being applied with a negative potential, a control electrode to which a control potential is applied and a ground electrode to which a ground potential is applied, configured to provide dynamic focusing of the multiple electron beams onto the substrate, in accordance with change of the height position of the surface of the substrate, by generating an electrostatic field, wherein the control electrode is disposed on an upstream side of a maximum magnetic field of the lens magnetic field of the first electromagnetic lens with respect to a direction of a trajectory central axis of the multiple electron beams, and a ground electrode is disposed on an upstream side of the control electrode with respect to the direction of the trajectory central axis.

Multiple electron beam irradiation apparatus, multiple electron beam irradiation method, and multiple electron beam inspection apparatus

According to one aspect of the present invention, a charged particle beam irradiation apparatus includes an electromagnetic lens configured to refract the charged particle beam; a plurality of electrodes arranged in a magnetic field of the electromagnetic lens and arranged to surround an outer space of a passage region of the charged particle beam; a supply mechanism configured to supply a gas to the space surrounded by the plurality of electrodes; a potential control circuit configured to control potentials of the plurality of electrodes so that a plasma is generated in the space surrounded by the plurality of electrodes and movements of electrons or positive ions generated by the plasma are controlled; and a stage configured to dispose a substrate irradiated with a charged particle beam passing through the electromagnetic lens, wherein the substrate is irradiated with light radiated by the plasma.

Charged particle beam irradiation apparatus, charged particle beam image acquisition apparatus, and charged particle beam inspection apparatus

A blanking deflector includes a first electrode being plate-like, a second electrode electrically separated from the first electrode, and arranged such that a first space is formed between the first and second electrodes, and a third electrode electrically separated from the first electrode, and arranged such that a second space, sufficiently wider than the first space, is formed between the first and third electrodes, wherein a transmission line, in which the second and third electrodes are electrically connected at, at least, input and output sides, is formed by the first, second, and third electrodes, multi-beams of a charged particle beam are made to pass through the second space between the first and third electrodes, and the multi-beams are deflected for blanking control by a voltage signal applied from the input side to between the first electrode, and a connected group of the second and third electrodes electrically connected.

Blanking deflector, and multi charged particle beam writing apparatus using three deflector electrodes and a transmission line

A charged particle beam lithography apparatus, includes a plurality of multiple-beam sets, each of which including a plurality of irradiation sources each generating an independent charged particle beam, a plurality of objective deflectors, each arranged for a corresponding charged particle beam, and configured to deflect the corresponding charged particle beam to a desired position on a substrate, and a plurality of electrostatic or electromagnetic lens fields each to focus the corresponding charged particle beam on the target object; a plurality of common deflection amplifiers, arranged for each multiple-beam set, and each of the plurality of common deflection amplifiers being configured to commonly control the plurality of objective deflectors arranged in a same multiple-beam set; a plurality of individual ON/OFF mechanisms configured to individually turn ON/OFF a beam irradiated from each irradiation source; and one or more multiple-beam clusters including the plurality of multiple-beam sets.

Charged particle beam lithography apparatus and charged particle beam pattern writing method

Growing community of inventors

Hiratsuka, Japan

Munehiro Ogasawara