Tokyo Electron Limited

Motoki Noro

Shinji Kawada

Yasutaka Hama

Masaki Inoue

Shu Kino

Kazuhisa Ishii

Tai-Chuan Lin

A substrate that includes a first film of a silicon-containing film and a second film having a second aperture formed on the first film is subjected to processing that includes: preparing the substrate; controlling a temperature of the substrate to &#x2212;30&#xb0; C. or less; and etching the first film through the second aperture using a plasma formed from a first process gas containing a fluorocarbon gas. By etching the first film through the second aperture, a first aperture of a tapered shape is formed in the first film such that a width of the first aperture gradually decreases toward a bottom of the first aperture.

Substrate processing method and substrate processing apparatus

A plasma treatment device includes a dielectric window containing SiO. The insulating film to be etched comprises silicon carbonitride. In a first plasma treatment step, a processing gas which contains no oxygen gas and contains CHF, etc, is used to deposit a protective film. In a second plasma treatment step, a processing gas which contains oxygen gas and contains CHF, etc. is used to etch away the top and other portions of a part having a convex cross-sectional shape.

Plasma treatment method and plasma treatment device

Disclosed is a method of forming a dummy gate in manufacturing a field effect transistor. The method includes a first process of exposing a workpiece having a polycrystalline silicon layer to plasma of HBr gas, and a second process of further exposing the workpiece to the plasma of HBr gas after the first process. The first process includes etching the polycrystalline silicon layer to form a dummy semiconductor part having a pair of side surfaces from the polycrystalline silicon layer, and forming a protection film based on a by-product of etching on the pair of side surfaces in such a manner that the thickness of the protection film becomes smaller toward a lower end of the dummy semiconductor part.

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Hsin-Chu, Taiwan

Motoki Noro