Kabushiki Kaisha Toshiba

Ebara Corporation

Motoaki Okada

Koji Ono

Tamami Takahashi

Atsushi Shigeta

Masako Kodera

Toshiro Maekawa

Riichiro Aoki

Shiro Mishima

Gisuke Kouno

A semiconductor cleaning method includes scrubbing a semiconductor wafer using a cleaning member made primarily of polyurethane and having micropores in a surface contacting the semiconductor wafer. The micropores have an average diameter ranging from 10 to 200 .mu.m. The cleaning member may be made of either polyurethane foam or non-woven fabric composed of fibers bound together by urethane resin. By this scrubbing step, particles that are strongly attached to the surface of a substrate such as the semiconductor wafer can easily be removed. During cleaning of the substrate, surface irregularities and crystalline protrusions on the surface of a substrate such as a semiconductor wafer can be scraped off to adjust the surface roughness of the semiconductor wafer to a desired degree for making the semiconductor wafer surface flat.

Method for cleaning workpiece

Growing community of inventors

Tokyo, Japan

Motoaki Okada