Applied Materials, Inc.

Other

Moshe Eizenberg

Susan G Telford

Meng Chu Tseng

Mei Yin Chang

Ramanujapuram A Srinivas

Klaus-Dieter Rinnen

Michio Aruga

Jennifer Meng Tseng

Susan Weihar Telford

Yoram Shapira

Ilan Shalish

A thermodynamically stable metallic contact for binary oxide-, nitride-, carbide or phosphide-semiconductors and a method of its preparation, the contact is formed in a high temperature reaction in vacuum of a metal bi-layer with the binary semiconductor substrate. With a proper choice of the two metallic layers, each metal forms a single phase with only one of binary semiconductor elements. The resulting phases form distinct layers in a thermodynamically stable sequence.

Technology for thermodynamically stable contacts for binary wide band gap semiconductors

Utilization of SiH4 soak and purge in deposition processes

A method of processing a substrate, such as a semiconductor wafer, in a vacuum processing chamber includes the steps of depositing a material on a surface of the substrate using a gas mixture, and purging the chamber of residual gases by flowing SiH.sub.4 into the chamber. Preferably, WSi.sub.x is deposited on a semiconductor wafer using a mixture comprising WF.sub.6, dichlorosilane and a noble gas, and the chamber is subsequently purged of residual WF.sub.6 and dichlorosilane by flowing SiH.sub.4 into the chamber. A further method of processing a substrate in a vacuum processing chamber includes the step of conditioning the chamber by flowing SiH.sub.4 into the chamber prior to depositing a material on the surface of the substrate. Semiconductor wafers processed according to the inventive method are characterized by more uniform sheet resistance values and reduced film stress. A vacuum processing apparatus is also provided for practicing methods of the invention and includes a chamber, means for depositing a material, such as WSi.sub.x, on a surface of a substrate disposed within the chamber, and means for purging the chamber with SiH.sub.4.

Utilization of SiH.sub.4 soak and purge in deposition processes

Purge in silicide deposition processes dichlorosilane

A tungsten silicide film is deposited from WF.sub.6 and SiCl.sub.2 H.sub.2 onto a substrate so that the tungsten to silicon ratio is substantially uniform through the thickness of the WSi.sub.x film, and the WSi.sub.x film is substantially free of fluorine. The film can be deposited by a multi-stage process where the pressure in the chamber is varied, or by a high temperature, high pressure deposition process in a plasma cleaned deposition chamber. Preferably the SiCl.sub.2 H.sub.2 and the WF.sub.6 are mixed upstream of the deposition chamber. A seeding gas can be added to the process gases.

Uniform tungsten silicide films produced by chemical vapor depostiton

Uniform tungsten silicide films produced by chemical vapor deposition

Growing community of inventors

Haifa, Israel

Moshe Eizenberg