Varian Semiconductor Equipment Associates, Inc.

Applied Materials, Inc.

Morgan Evans

Joseph C Olson

Rutger Meyer Timmerman Thijssen

Peter F Kurunczi

Ludovic Godet

Jason M Schaller

John J Hautala

Ala Moradian

Kevin R Anglin

Anthony Renau

Sony Varghese

Ross Bandy

William Tyler Weaver

Robert Brent Vopat

Tristan Yonghui Ma

D Jeffrey Lischer

Robert Masci

Min Gyu Sung

Charles T Carlson

Gregg Alexander Norris

Norman E Hussey

Maurice Emerson Peploski

Jinxin Fu

Steven Raymond Walther

David T Blahnik

Simon Ruffell

Johannes M Van Meer

Christopher A Rowland

George Gammel

Andrew Michael Waite

Klaus Petry

Stanislav S Todorov

Daniel Distaso

Chi-Chun Chen

Damian Brennan

William Gray Callahan

Joe Olson

Ryan Magee

James Buonodono

Thomas James Soldi

Douglas Thomas Fielder

Frank Sinclair

William Davis Lee

Julian G Blake

Paul J Murphy

Mark R Amato

Connie P Wang

Christopher R Hatem

Shengwu Chang

Richard John Hertel

Jonathan Gerald England

Jay Thomas Scheuer

Christopher W Campbell

Naushad K Variam

Paul E Pergande

Paul Sullivan

Ashwin Madhukar Purohit

Jillian Reno

Joseph Frederick Sommers

Jae Young Lee

Tyler Burton Rockwell

Joseph P Dzengeleski

Ernest Everett Allen

Gregory Thronson

Motoya Okazaki

Grant Kenji Larsen

Heyun Yin

Ryan C Boas

Cheng-Huang Kuo

Tassie Andersen

Gregory R Gibilaro

Robert A Poitras

Douglas E May

Megan Clark

Thomas Soldi

Rekha Padmanabhan

Ashwin Shetty

Kenneth Swenson

Methods of producing grating materials with variable height are provided. In one example, a method may include providing a grating material atop a substrate, and positioning a shadow mask between the grating material and an ion source, wherein the shadow mask is separated from the grating material by a distance. The method may further include etching the grating material using an ion beam passing through a set of openings of the shadow mask, wherein a first depth of a first portion of the grating material is different than a second depth of a second portion of the grating material.

Shadow mask apparatus and methods for variable etch depths

An apparatus with a grating structure and a method for forming the same are disclosed. The grating structure includes forming a recess in a grating layer. A plurality of channels is formed in the grating layer to define slanted grating structures therein. The recess and the slanted grating structures are formed using a selective etch process.

Variable height slanted grating method

Embodiments described herein relate to methods and apparatus for forming gratings having a plurality of fins with different slant angles on a substrate and forming fins with different slant angles on successive substrates using angled etch systems and/or an optical device. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle ϑ relative to a surface normal of the substrates and form gratings in the grating material.

Modulation of rolling k vectors of angled gratings

A system may include a substrate stage, configured to support a substrate, where a main surface of the substrate defines a substrate plane. The system may include an ion source, including an extraction assembly that is oriented to direct an ion beam to the substrate along a trajectory defining a non-zero angle of incidence with respect to a perpendicular to the substrate plane. The system may include a radical source oriented to direct a radical beam to the substrate along a trajectory defining the non-zero angle of incidence with respect to a perpendicular to the substrate plane. The substrate stage may be further configured to scan the substrate along a first direction, lying with the substrate plane, while the main surface of the substrate is oriented within the substrate plane.

Scanned angled etching apparatus and techniques providing separate co-linear radicals and ions

A method for forming a device structure is disclosed. The method of forming a device structure includes forming a variable-depth structure in a device material layer using a laser ablation. A plurality of device structures is formed in the variable-depth structure to define slanted device structures therein. The variable-depth structure and the slanted device structures are formed using an etch process.

Forming variable depth structures with laser ablation

A plasma source may include a plasma chamber, where the plasma chamber has a first side, defining a first plane and an extraction assembly, disposed adjacent to the side of the plasma chamber, where the extraction assembly includes at least two electrodes. A first electrode may be disposed immediately adjacent the side of the plasma chamber, wherein a second electrode defines a vertical displacement from the first electrode along a first direction, perpendicular to the first plane, wherein the first electrode comprises a first aperture, and the second electrode comprises a second aperture. The first aperture may define a lateral displacement from the second aperture along a second direction, parallel to the first plane, wherein the vertical displacement and the lateral displacement define a non-zero angle of inclination with respect to a perpendicular to the first plane.

Apparatus and techniques for angled etching using multielectrode extraction source

A method is provided. The method includes exposing a first material disposed across a first plane on a first substrate to an ion beam to form a first plurality of structures in the first material, the ion beam directed at the first material at an ion beam angle ϑ relative to a surface normal of the first substrate. The first substrate is positioned at a first rotation angle ϕbetween the ion beam and a first vector of the first plurality of structures, the first material is exposed to the ion beam incrementally along a first direction, and exposure of the first material to the ion beam is varied along the first direction to generate a depth variation between the first plurality of structures in the first direction.

Etch improvement

Embodiments of the present application generally relate to methods for forming a plurality of gratings. The methods generally include depositing a material over one or more protected regions of a waveguide combiner disposed on a substrate, the material having a thickness inhibiting removal of a grating material disposed on the waveguide combiner when an ion beam is directed toward the substrate, and directing the ion beam toward the substrate. The methods disclosed herein allow for formation of a plurality of gratings in one or more unprotected regions, while no gratings are formed in the protected regions.

Method of forming a plurality of gratings

Embodiments described herein relate to methods and apparatus for forming gratings having a plurality of fins with different slant angles on a substrate and forming fins with different slant angles on successive substrates using angled etch systems and/or an optical device. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle &#x3d1; relative to a surface normal of the substrates and form gratings in the grating material.

Embodiments of the present disclosure relate to methods for controlling etch depth by providing localized heating across a substrate. The method for controlling temperatures across the substrate can include individually controlling a plurality of heating pixels disposed in a dielectric body of a substrate support assembly. The plurality of heating pixels provide temperature distributions on a first surface of the substrate disposed on a support surface of the dielectric body. The temperature distributions correspond to a plurality of portions of at least one grating on a second surface of the substrate to be exposed to an ion beam. Additionally, the temperatures can be controlled by individually controlling light emitting diodes (LEDs) of LED arrays. The substrate is exposed to the ion beam to form a plurality of fins on the at least one grating. The at least one grating has a distribution of depths corresponding to the temperature distributions.

Methods for controlling etch depth by localized heating

Embodiments of the disclosure generally relate to methods of forming gratings. The method includes depositing a resist material on a grating material disposed over a substrate, patterning the resist material into a resist layer, projecting a first ion beam to the first device area to form a first plurality of gratings, and projecting a second ion beam to the second device area to form a second plurality of gratings. Using a patterned resist layer allows for projecting an ion beam over a large area, which is often easier than focusing the ion beam in a specific area.

Method of forming gratings

Methods of producing grating materials with variable height fins are provided. In one example, a method may include providing a mask layer atop a substrate, the mask layer including a first opening over a first processing area and a second opening over a second processing area. The method may further include etching the substrate to recess the first and second processing areas, forming a grating material over the substrate, and etching the grating material in the first and second processing areas to form a plurality of structures oriented at a non-zero angle with respect to a vertical extending from a top surface of the substrate.

Methods for variable etch depths

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Manchester, MA, United States of America

Morgan Evans