Globalfoundries Inc.

Mohammed Radwan

Matthias Zinke

Johann Steinmetz

When performing plasma assisted etch processes for patterning complex metallization systems of microstructure devices, the probability of creating plasma-induced damage, such as arcing, may be reduced or substantially eliminated by using a superior ramp-up system for the high frequency power and the low frequency power. To this end, the high frequency power may be increased at a higher rate compared to the low frequency power component, wherein, additionally, a time delay may be applied so that, at any rate, the high frequency component reaches its target power level prior to the low frequency component.

Technique for reducing plasma-induced etch damage during the formation of vias in interlayer dielectrics by modified RF power ramp-up

When forming via openings in sophisticated semiconductor devices, a silicon-containing anti-reflective coating (ARC) layer may be efficiently used for adjusting the critical dimension of the via openings by using a two-step etch process in which, in at least one of the process steps, the flow rate of a reactive gas component may be controlled to increase or reduce the resulting width of an opening in the silicon ARC layer. In this manner, the spread of critical dimensions of vias around the target value may be significantly reduced while also reducing any maintenance and rework efforts.

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Dresden, Germany

Mohammed Radwan