Hitachi, Ltd.

Hitachi-high-technologies Corporation

Hitachi High-tech Corporation

Miyako Matsui

Tatehito Usui

Kenichi Kuwahara

Mari Nozoe

Masaru Izawa

Hiroyuki Kobayashi

Hiroki Kawada

Natsuki Yokoyama

Yoshio Kawamura

Shigeo Moriyama

Osamu Komuro

Yoshifumi Kawamoto

Naoki Yasui

Atsuko Takafuji

Atsushi Sekiguchi

Shigeru Nakamoto

Naoshi Itabashi

Takeshi Ohmori

Osamu Inoue

Fumihiko Uchida

Minoru Hidaka

Takahiro Kawasaki

Takashi Takahama

Katsumi Setoguchi

Tsubasa Okamoto

Tatuharu Yamamoto

Naohiro Kawamoto

A plasma processing apparatusthat performs, on a waferin which a multilayer film in which an insulating film and a film to be processed containing a metal are alternately laminated is formed on a substrate, plasma etching of the film to be processed, includes: a processing chamberwhich is disposed inside a vacuum container; a sample stagewhich is disposed inside the processing chamber and on which the wafer is placed; a detection unitwhich detects reflected light obtained by the wafer reflecting light emitted to the wafer; a control unitwhich controls plasma processing on the wafer; and an end point determination unitwhich determines an etching end point of the film to be processed based on a change in an amplitude of vibration in a wavelength direction of a light spectrum of the reflected light, and the control unit receives determination of the end point made by the end point determination unit and stops the plasma processing on the wafer.

Plasma processing apparatus and plasma processing method

Provided is a plasma processing method for plasma etching an etching target film formed on a sample. The method includes a protective film forming step of selectively forming a protective film on an upper portion of a pattern formed on the sample and adjusting a width of the formed protective film such that a distribution of the width of the formed protective film in a surface of the sample becomes a desired distribution, and a step of plasma etching the etching target film after the protective film forming step.

Plasma processing method and plasma processing apparatus

In cycle etching in which a depo process and an etching process are repeated, a depo film thickness over a pattern is controlled precisely, and etching is executed to have a desired shape stably for a long time. There are included the depo process (S) of introducing a reactive gas having a deposit property to a processing chamber and forming a deposit layer over the surface of a pattern to be etched of a substrate to be etched, the etching process (S) of removing a reaction product of the deposit layer and the surface of the pattern to be etched, and a monitoring process (S) of irradiating light to the pattern to be etched at the time of the depo process of cycle etching for executing two processes alternately and working a fine pattern and monitoring a change amount of the film thickness of the deposit layer by change of a coherent light having a specific wavelength reflected by the pattern to be etched, the depo process being for forming the deposit layer, in which a processing condition of processes for forming the deposit layer of the next cycle and onward of cycle etching is determined so that an indicator of the depo film thickness calculated from the change amount of the film thickness of the deposit layer monitored falls in a predetermined range compared to reference data.

The present invention relates to an etching method including a reaction layer forming step of forming a reaction layer by adsorption of a gas on a surface of an etching target material, a desorption step of desorbing the reaction layer after the reaction layer forming step, and a removal step of removing the reaction layer or a deposited film, characterized in that the surface of the etching target material is etched by the reaction layer forming step and the desorption step.

Etching method and plasma processing apparatus

An object of the present invention is to provide an image processing apparatus that quickly and precisely measures or evaluates a distortion in a field of view and a charged particle beam apparatus. To attain the object, an image processing apparatus or the like is proposed which acquires a first image of a first area of an imaging target and a second image of a second area that is located at a different position than the first area and partially overlaps with the first area and determines the distance between a measurement point in the second image and a second part of the second image that corresponds to a particular area for a plurality of sites in the overlapping area of the first image and the second image.

Image processing device, charged particle beam device, charged particle beam device adjustment sample, and manufacturing method thereof

A method and apparatus for inspecting a wafer during a semiconductor device fabrication process. The apparatus performs, only via observation from the wafer's top surface, inspection and quantitative evaluation of a portion that is in the shadow of an incident electron beam and a buried structure in the wafer. To this end, the electron beam is emitted so that it partially penetrates a wafer surface and reaches an unexposed pattern portion to the beam. When a stereoscopic structure is constructed from the scan image based on a secondarily generated signal, generate a stereoscopic model of a pattern being tested. The secondary signal is used to detect position information of a pattern edge(s) and signal intensity. Then, use the information to calculate more than one feature quantity of the test pattern. From the calculated feature quantities, the stereoscopic structure is constructed for displaying a 3D structure of the pattern.

Method and apparatus for inspecting semiconductor device

In a method for inspecting positions and types of defects on wafers with circuit patterns in a semiconductor manufacturing process, inspection is made regardless of the types and materials of junctions of circuit patterns of the semiconductor devices, different kinds of defects being distinguished from one another. Further, electrification of the circuit pattern is prevented, and the area to be exposed to an electron beam is controlled evenly and at a desired voltage. During inspection of the positions and types of defects on a wafer using a charged-particle beam from a charged-particle source, an optical beam from an optical source as well as a charged-particle beam are applied to a junction of the circuit pattern of the wafer placed on a wafer holder. Thus, regardless of the types and materials of circuit patterns, a highly sensitive inspection is made according to contrasts in the defects of a captured image.

Inspection system and inspection process for wafer with circuit using charged-particle beam

The present invention provides a wafer inspection technique capable of detecting a defect in a wafer on which a pattern having a large step such as a contact hole being subjected to a semiconductor manufacturing process is formed and obtaining information such as the position and kind of a defect such as a hole with open contact failure caused in dry etching process at high speed. A wafer on which a pattern having a large step being subjected to a semiconductor manufacturing process is formed is scanned and irradiated with an electron beam having irradiation energy which is in a range from 100 eV to 1,000 eV, and a defect is detected at high speed from an image of secondary electrons generated. Before the secondary electron image is captured, the wafer is irradiated with an electron beam at high speed while being moved to thereby charge the surface of the wafer with a desired charging voltage. The kind of the defect is determined from the captured secondary electron image, and a distribution of defects in the plane of the wafer is displayed.

Wafer inspection system and wafer inspection process using charged particle beam

Method and apparatus for fabricating semiconductor devices

Growing community of inventors

Tokyo, Japan

Miyako Matsui