Shinko Electric Industries Co., Ltd.

Other

Mitsuyoshi Imai

Hideharu Sakoda

Muneharu Morioka

Toshiyuki Motooka

Mamoru Suwa

Hideki Toya

Masaki Sakaguchi

Naoki Yamabe

Atsushi Nakamura

Masao Nakazawa

Kei Imafuji

Takashi Ozawa

Seiji Sato

Kiyokazu Sato

Masatoshi Nakamura

Osamu Hoshino

A wiring substrate includes a flexible insulation substrate, a first wiring layer formed on an upper surface of the insulation substrate, a second wiring layer formed on a lower surface of the insulation substrate, and through wiring bonded to the first wiring layer and the second wiring layer and formed in a through hole extending through the first wiring layer, the insulation substrate, and the second wiring layer. The through wiring includes a projection that extends along a lower surface of the second wiring layer located outside the through hole. An upper surface of the through wiring is flush with an upper surface of the first wiring layer.

Wiring substrate

A wiring substrate includes an adhesive layer, a wiring layer, and a support substrate. The adhesive layer includes a first surface and a second surface that is opposite to the first surface. The wiring layer is formed on the first surface of the adhesive layer. The support substrate is formed on the second surface of the adhesive layer. The wiring layer is partially exposed in a through hole extending through the adhesive layer and the support substrate in a thicknesswise direction. The support substrate is adhered to the adhesive layer in a removable manner.

Wiring substrate and semiconductor device

A solderis formed, by a plating method, on a connecting surfaceA and a side surfaceB in a connecting padof a wiring boardwhich is opposed to a metal bumpformed on an electrode padof a semiconductor chip, and subsequently, the solderis molten to form an accumulated soldertaking a convex shape on the connecting surfaceA of the connecting padand the metal bumpis then mounted on the connecting surfaceA of the connecting padon which the accumulated solder is formed, and the accumulated solderand the metal bumpare thus bonded to each other.

Method of manufacturing semiconductor device

In order to improve adhesion between a plated film which functions as an external connection terminal of a semiconductor device and a surface of a resin protuberance and to improve reliability, a carrier substrate includes a metal substrate which is shaped into a sheet form, to which a semiconductor chip is fixed, and which is removed before the semiconductor device is completed, a recess formed at a position of the metal substrate corresponding to the resin protuberance and having a rugged bottom surface and/or a rugged side surface, and a plated film formed on the inner surface of the recess.

Resin for semiconductor wire

In order to improve adhesion between a plated film which functions as an external connection terminal of a semiconductor device and a surface of a resin protuberance and to improve reliability, a carrier substrate includes a metal substrate which is shaped into a sheet form, to which a semiconductor chip is fixed, and which is removed before the semiconductor device is completed, a recess formed at a position of the metal substrate corresponding to the resin protuberance and having a rugged bottom surface and/or a rugged side surface, and a plated film formed on the inner surface of the recess

Carrier substrate for producing semiconductor device

Growing community of inventors

Nagano, Japan

Mitsuyoshi Imai