Tokyo Electron Limited

Tokyo Electron Kyushu Limited

Tel Kyushu Limited

Nagaoka University of Technology

Tokyo Electron Limited and Matsushita Electric Works, Ltd.

Mitsuru Ushijima

Masami Akimoto

Kiyohisa Tateyama

Yasushi Yagi

Yoshio Kimura

Noriyuki Anai

Osamu Hirakawa

Kazutsugu Aoki

Yoshifumi Watabe

Takuya Komoda

Koichi Aizawa

Katsuhiko Iwabuchi

Yasunobu Inoue

Kanji Yasui

Hiroshi Nishiyama

A substrate processing method includes steps of: arranging a substrate in a chamber; introducing Hgas at a first flow rate and Ogas at a second flow rate independently from the Hgas into a catalyst reaction portion in which catalyst is accommodated, wherein HO gas produced from the Hgas and the Ogas that contact the catalyst is ejected from the catalyst reaction portion toward the substrate; and reducing a flow rate of the Ogas introduced to the catalyst reaction portion to a third flow rate that is lower than the second flow rate, wherein the steps of introducing the Hgas and the Ogas and reducing the flow rate of the Ogas are repeated in this order at a predetermined repetition frequency, thereby processing the substrate.

Substrate processing method

In an anodic oxidation apparatus and an anodic oxidation method and a panel for a display device manufactured by them, a large target substrate is treated by a smaller component. The anodic oxidation apparatus includes a lamp which emits light; a treatment bath which has a stage capable of mounting a target substrate thereon with a treatment part thereof directed upward and is provided at a position where the emitted light reaches and a frame located on the stage; a cathode electrode which is provided on the way of the emitted light to reach the mounted target substrate and includes an opening to allow the light to pass therethrough; a seal member which establishes a liquid sealing property between the frame and the mounted target substrate; a conductive contact member which is provided to be contactable with a plurality of electrode patterns formed on the target substrate outside an annular shape of the seal member and moves along side of the target substrate; and a current source which is electrically connected to the contact member and sets an output current value in accordance with the number of electrode patterns of the mounted target substrate in contact as the contact member moves.

Anodic oxidation apparatus

In an anodization apparatus and an anodization method for electrochemically treating a target substrate by irradiating the target substrate with light, treatment of a large target substrate can be made possible with smaller constituent elements. The electrical contact with the target substrate by a contact member is realized by a plurality of contact members or by the movement of a contact member to change the electrical contact position. The target substrate is manufactured in advance so as to have such a structure that portions thereof to be in contact with the plural contact members are connected to portions of a conductive layer on a treatment part thereof respectively. When the combination of this target substrate and the contact member(s) is used, and the electric current is passed through a part of the contact members, using a changeover switch, or the electric current passed through the contact member is applied to a portion of the conductive layer of the target substrate by the movement of the contact member, it is made possible to reduce the value of the electric current necessary for the treatment to an amount required only for the portion of the treatment part.

Anodization device and anodization method

An anodic oxidation apparatus and an anodic oxidation method are provided that enable uniform photoirradiation of a treatment part of a target substrate, thereby realizing enhancement in uniformity of anodic oxidation in the surface of the target substrate. The anodic oxidation apparatus includes: a lamp that emits light; a target substrate holder provided at a position reached by the emitted light and capable of holding the target substrate; a cathode electrode that is provided on the way of the emitted light to reach the target substrate and that has an opening portion to allow light to pass therethrough and has a conductor section not transmitting light; and a vibrating mechanism to periodically vibrate a spatial position of one of the cathode electrode, the lamp, and the target substrate holder. While the positional relationship among the three of the lamp, the cathode electrode, and the target substrate holder holding the target substrate is roughly maintained, the spatial position of at least one of the three is periodically vibrated, thereby dispersing the shadow of the cathode electrode on the target substrate with time.

Anodic oxidizer, anodic oxidation method

A resist process system of the present invention includes at least two robots for conveying a wafer, a passage through which the robots can move, plural process units arranged along the passage, and a waiting unit for temporarily holding the wafer which is to be processed. The waiting unit is arranged beside the passage and between the process units and it includes plural compartments partitioned in it.

Resist processing method

A method of manufacturing a semiconductor device of this invention relates to a method of manufacturing a semiconductor device with ultra-micropattern electrodes. Light is projected on a resist film, and reflected light from a region on which no semiconductor chip is formed, i.e., a flat region is detected to measure the thickness of the resist film. Based on the measured thickness, at least one of the resist film forming step, the exposing step, and the developing step is controlled, so that the electrodes have a desired width.

Method and apparatus for manufacturing a semiconductor device

Resist process system

The resist-processing system according to the present invention includes at least one processing sections having a plurality of treatment units for performing various kinds of treatments on a semiconductor wafer such as the coating process and baking process, a loading section connected to the processing section for supplying the wafer to the processing section, a vacuum tweezer for carrying the wafer in the loading section so as to transfer the wafer from the loading section to the processing section, a handling robot for receiving the wafer from said loading section and transferring it in the processing section so as to load and unload the wafer to/from each of the treatment units, control means for controlling the operations of the vacuum tweezer and the handling robot in accordance with a predetermined program, and a passage provided in the processing section in such a manner the passage is disposed along with said plurality of treating units. Further, the handling robot travels through the passage in accordance with the predetermined program from the control means so as to stop by each of the treatment units in the order of the treatments required by the wafer.

Apparatus for coating a photo-resist film and/or developing it after

Disclosed is a coating apparatus for applying a resist or developing solution to a semiconductor wafer. This coating apparatus comprises a plurality of nozzles supplied with various resist from a resist source and each adapted to drip the different solution onto the wafer, a vessel in which the nozzles is kept on stand-by, while maintaining the liquids in a predetermined state in the vicinity of discharge port portions of the nozzles, when the nozzles need not be operated, and a nozzle operating mechanism for selecting one of the nozzles kept on stand-by in the vessel, and transporting the selected nozzle to the location of the wafer, whereby the resist is applied to the wafer by means of only the nozzle transported by the nozzle operating mechanism.

Coating apparatus and method for applying a liquid to a semiconductor

An apparatus is disclosed which forms a photo-resist film on a substrate surface and/or develops it. A passage provided such that it extends in a predetermined direction to allow conveying of a substrate having a surface on which a photoresist film is to be formed or a substrate having a photo-resist film to be developed, a plurality of treating units necessary for forming a photo-resist film and/or a plurality of treating units necessary for developing the photo-resist film, these units being provided along the passage, conveying means movable along a predetermined course for conveying the substrate in a predetermined direction, substrate handling means provided on the conveying means for holding a substrate and for setting a substrate into the treating unit, said substrate handling means being movable and rotatable in any direction, and control means for selecting said plurality of treating units in any combination and for controlling operations of the conveying means and substrate handling means so that the substrate undergoes predetermined treatments at the selected units in any sequence.

Growing community of inventors

Tama, Japan

Mitsuru Ushijima