Canon Kabushiki Kaisha

Mitsuru Ohtsuka

Seiichi Miyazawa

Toshihiko Ouchi

Tohru Den

Natsuhiko Mizutani

Shintaro Kasai

Taiko Motoi

Toshiaki Fukada

Taihei Mukaide

Toshiaki Aiba

Masatoshi Watanabe

Yasunori Ohora

Takeshi Fujita

Takashi Asou

A fabrication method of fabricating a structure capable of being used for generation or detection of electromagnetic radiation includes a forming step of forming a layer containing a compound semiconductor on a substrate at a substrate temperature below about 300&#xb0; C., a first heating step of heating the substrate with the layer in an ambience containing arsenic, and a second heating step of heating the substrate with the layer at the substrate temperature above about 600&#xb0; C. in a gas ambience incapable of chemically reacting on the compound semiconductor. Structures of the present invention capable of being used for generation or detection of electromagnetic radiation can be fabricated using the fabrication method by appropriately regulating the substrate temperature, the heating time, the gas ambience and the like in the second heating step.

Structure capable of use for generation or detection of electromagnetic radiation, optical semiconductor device, and fabrication method of the structure

A metal ion emission device for emitting a metal ion by applying voltage to a molten liquid metal includes a needle-like part having an internal opening in which the liquid metal can be moved. The needle-like part has a first opening for supplying the liquid metal to the opening and a second opening for emitting the liquid metal as a metal ion.

Metal ion emission device and process for producing the same, ion beam irradiation device, processing apparatus and analyzing apparatus provided with emission device

To provide a plate of high resolution and large area. The channel plate configured by including a substrate, a first electrode placed on the top face of the substrate, and a second electrode placed on the bottom face of the substrate, wherein the substrate is a porous element having a plurality of pores extending therethrough, and the porous element is formed by a compound including aluminum, and the porous element has an electron multiplier on a wall surface of the pore.

Channel plate and manufacturing method thereof

In a speech synthesizer, each frame for generating a speech waveform has an expansion degree to which the frame is expanded or compressed in accordance with the production speed of synthetic speech. In accordance with the set speech production speed, the time interval between beat synchronization points is determined on the basis of the speed of the speech to be produced, and the time length of each frame present between the beat synchronization points is determined on the basis of the expansion degree of the frame. Parameters for producing a speech waveform in each frame are properly generated by the time length determined for the frame. In the speech synthesizer for outputting a speech signal by coupling phonemes constituted by one or a plurality of frames having phoneme vowel-consonant combination parameters (VcV, cV, or V) of the speech waveform, the number of frames can be held constant regardless of a change in the speech production speed. This prevents degradation in the tone quality or a variation in the processing quantity resulting from a change in the speech production speed.

Syllable-beat-point synchronized rule-based speech synthesis from coded

A semiconductor device has a substrate composed of a semiconductor which has one of sphalerite and diamond crystal structures. The substrate has a plane orientation inclined at 0.5.degree. to 15.degree. with respect to one of {111} and {110} planes indicated by Miller indices. A first semiconductor layer is formed on the substrate. The first semiconductor layer has a sawtooth-shaped first periodic structure consisting of one of the {111} and {110} planes indicated by the Miller indices and at least one plane indicated by another index. A second semiconductor layer is formed on the first semiconductor layer. The second semiconductor layer has a second periodic structure having a phase shifted from a phase of the first periodic structure.

Semiconductor device having diffraction grating

A semiconductor laser having a laser resonator structure having a substrate with a trapezoidal projection forming on both sides of an upper base an inclined surface extending along a resonating direction of a resonator, a first semiconductor layer of a first or second conductivity type formed on the substrate, an active layer for generating a laser beam, a second semiconductor layer formed on the substrate and to which an impurity of a convertible conductivity type is doped with a portion of the second semiconductor layer above the inclined surface of the substrate having the first conductivity type and the other portion having the second conductivity type, and a pair of electrodes causing a current to flow through the active layer.

Growing community of inventors

Yamato, Japan

Mitsuru Ohtsuka