Tokyo Electron Limited

Other

International Business Machines Corporation

Central Glass Company, Limited

Mitsuhiro Tachibana

Yumiko Kawano

Hideaki Yamasaki

Hotaka Ishizuka

Hitoshi Kato

Chishio Koshimizu

Tsuyoshi Moriya

Tatsuo Hatano

Jun Yamawaku

Takeshi Kobayashi

Shigehiro Miura

Akitaka Shimizu

Akifumi Yao

Shuji Moriya

Sumi Tanaka

Tsukasa Matsuda

Fumihiko Uesugi

Natsuko Ito

Yoshinori Kato

Kazuya Okubo

Jun Lin

Kunihiro Yamauchi

Koji Takeya

Koichi Nagakura

Keiko Hada

Takafumi Kimura

Masaru Aomori

Sandra Guy Malhotra

Andrew Herbert Simon

Taro Ikeda

Yohei Yamazawa

Fenton Read McFeely

Kenji Suzuki

Jun Ogawa

Naoki Shindo

Atsushi Gomi

John Jacob Yurkas

Gert J Leusink

Kimihiro Matsuse

Gen You

Hiroaki Ikegawa

Kentaro Oshimo

Yu Wamura

Susumu Arima

Tadashi Enomoto

Satoshi Toda

Tomihiro Yonenaga

Haruhiko Furuya

Kosuke Takahashi

Tatsuo Miyazaki

Hiroshi Kondo

Kazuhito Nakamura

Tsuyoshi Hashimoto

Muneyuki Otani

Sakae Nakatsuka

Keizo Hosoda

Haruna Suzuki

Koumei Matsuzawa

Shinichi Kawaguchi

Cheng Fang

Kohichi Sato

Koumei Matsuzava

Satoshi Yonezawa

An etching method includes: providing, within a chamber, a substrate that includes at least a silicon-containing material and a molybdenum film or a tungsten film which is in an exposed state, and selectively etching the molybdenum film or the tungsten film relative to the silicon-containing material by supplying, into the chamber, an oxidation gas and a hexafluoride gas as an etching gas.

Etching method and etching apparatus

There is provided a substrate processing method which includes: treating a substrate using a fluorine-containing gas; and exposing the substrate to a moisture-containing atmosphere.

Substrate processing method, substrate processing apparatus and substrate processing system

A technique capable of removing a natural oxide film formed on a surface of a semiconductor layer which contains a compound of indium and an element other than indium as a main ingredient, without making a temperature of the semiconductor layer relatively high. The technique includes supplying a first etching gas which is &#x3b2;-diketone to the semiconductor layer and heating the semiconductor layer to remove an oxide of the indium constituting the natural oxide film; and supplying a second etching gas to the semiconductor layer and heating the semiconductor layer to remove an oxide of the element constituting the natural oxide film. By using the first etching gas, it is possible to remove the indium oxide even if the temperature of the semiconductor layer is relatively low. This eliminates the need to increase the temperature to a relatively high level when removing the natural oxide film.

Naturally oxidized film removing method and naturally oxidized film removing device

An etching method includes a step of etching a cobalt film formed on a surface of a target object by supplying an etching gas containing &#x3b2;-diketone and an oxidizing gas for oxidizing the cobalt film to the target object. The supply of the etching gas and the oxidizing gas is carried out such that a flow rate ratio of the oxidizing gas to the etching gas is ranging from 0.5% to 50% while heating the target object to a temperature lower than or equal to 250&#xb0; C.

A film formation device to conduct a film formation process for a substrate includes a rotating table, a film formation area configured to include a process gas supply part, a plasma processing part, a lower bias electrode provided at a lower side of a position of a height of the substrate on the rotating table, an upper bias electrode arranged at the same position of the height or an upper side of a position of the height, a high-frequency power source part connected to at least one of the lower bias electrode and the upper bias electrode and configured to form a bias electric potential on the substrate in such a manner that the lower bias electrode and the upper bias electrode are capacitively coupled, and an exhaust mechanism.

Film formation device, substrate processing device, and film formation method

A substrate processing apparatus includes a processing chamber; process areas each of which supplies a reaction gas; a turntable that rotates to cause a substrate to pass through the process areas; a gas nozzle provided in one of the process areas; a separating area that supplies a separation gas to separate atmospheres of the process areas; and a cover part configured to cover the gas nozzle and cause the reaction gas supplied from the gas nozzle to remain around the gas nozzle. The cover part includes an upstream side wall, a downstream side wall, and an upper wall. The cover part also includes a guide surface configured to guide the separation gas to flow over a lower part of the upstream side wall to a space above the upper wall. The distance between the gas nozzle and the upstream side wall is greater than or equal to 8 mm.

Substrate processing apparatus and film deposition apparatus

A film deposition apparatus configured to perform a film deposition process on a substrate in a vacuum chamber includes a turntable configured to rotate a substrate loading area to receive the substrate, a film deposition area including at least one process gas supplying part configured to supply a process gas onto the substrate loading area and configured to form a thin film by depositing at least one of an atomic layer and a molecular layer along with a rotation of the turntable, a plasma treatment part provided away from the film deposition area in a rotational direction of the turntable and configured to treat the at least one of the atomic layer and the molecular layer for modification by plasma, and a bias electrode part provided under the turntable without contacting the turntable and configured to generate bias potential to attract ions in the plasma toward the substrate.

Film deposition apparatus, substrate processing apparatus and film deposition method

A method of depositing a film of forming a doped oxide film including a first oxide film containing a first element and doped with a second element on substrates mounted on a turntable including depositing the first oxide film onto the substrates by rotating the turntable predetermined turns while a first reaction gas containing the first element is supplied from a first gas supplying portion, an oxidation gas is supplied from a second gas supplying portion, and a separation gas is supplied from a separation gas supplying portion, and doping the first oxide film with the second element by rotating the turntable predetermined turns while a second reaction gas containing the second element is supplied from one of the first and second gas supplying portions, an inert gas is supplied from another one, and the separation gas is supplied from the separation gas supplying portion.

Method of depositing a film

A method of forming a tungsten film on a surface of an object to be processed in a vessel capable of being vacuumized, includes the steps of forming a tungsten film by alternately repeating a reduction gas supplying process for supplying a reduction gas and a tungsten gas supplying process for supplying a tungsten-containing gas with an intervening purge process therebetween for supplying an inert gas while vacuumizing the vessel. A reduction gas supplying period of a reduction gas supplying process among the repeated reduction gas supplying processes is set to be longer than that of the remaining reduction gas supplying processes.

Method of forming tungsten film

A metal CVD process includes a step (A) of introducing a gaseous source material containing a metal carbonyl compound into a process space adjacent to a surface of a substrate to be processed in such a manner that the metal carbonyl compound has a first partial pressure, and a step (B) of depositing a metal film on the surface of the substrate by introducing a gaseous source material containing the metal carbonyl compound into the process space in such a mater that the metal carbonyl compound has a second, smaller partial pressure. The step (A) is conducted such that there is caused no substantial deposition of the metal film on the substrate.

CVD process capable of reducing incubation time

A method is provided for forming a metal layer on a substrate using an intermittent precursor gas flow process. The method includes exposing the substrate to a reducing gas while exposing the substrate to pulses of a metal-carbonyl precursor gas. The process is carried out until a metal layer with desired thickness is formed on the substrate. The metal layer can be formed on a substrate, or alternately, the metal layer can be formed on a metal nucleation layer.

Method of forming a metal layer using an intermittent precursor gas flow process

A metal film forming method, includes the steps of (a) (s, s) supplying a plural kinds of ingredient gases to a base barrier film () in sequence, wherein at least one of the gases includes a metal, and (b) (s, s) vacuum-exhausting the ingredient gases of the step (a) or substituting the ingredient gases of the step (a) by an other kind of gas after the ingredient gases of the step (a) are supplied respectively, thereby an extremely thin film () of the metal is formed on the base barrier film ().

Method of forming metal wiring and semiconductor manufacturing apparatus for forming metal wiring

A cleaning end point detecting apparatus detects an end point of a cleaning process in which contamination attached to an inner wall of a reaction chamber is removed by introducing a cleaning gas into the chamber to produce a cluster cloud and detached particles. An irradiating unit irradiates a laser beam onto the cluster cloud and the detached particles within the reaction chamber to produce a scattered laser beam. A monitoring unit monitors the scattered laser beam as a two-dimensional image information. A judging unit judges the end point of the cleaning process on the basis of the two-dimensional image information. Preferably, the judging unit judges, as the end point of the cleaning process, a time instant when neither the detached particles nor the cluster cloud are detected on the basis of the two-dimensional image information.

Apparatus and method for detecting an end point of a cleaning process

This cleaning method and cleaning apparatus for a film deposition apparatus includes a processing container accommodating a mounting table for mounting an object W to be processed, a gas-introduction unit for introducing a designated gas into the processing container, a vacuum exhausting system for exhausting an atmosphere in the processing container in vacuum, and an automatic pressure regulating valve interposed in the vacuum exhausting system so that a pressure in the processing container can be maintained at a constant value by changing an opening degree of the automatic pressure regulating valve. The cleaning method and cleaning apparatus further includes a cleaning-gas supplying unit for supplying the gas-introduction unit with a cleaning gas, a valve-opening monitoring unit for monitoring an opening degree of the automatic pressure regulating valve, a change detecting unit for detecting a change in the opening degree on a basis of an output from the valve-opening monitoring unit and a cleaning-end recognizing unit for recognizing an end point of cleaning on a basis of an output from the change detecting unit . Consequently, the cleaning method and cleaning apparatus can detect the end point of an appropriate etching with ease.

Method and apparatus for cleaning film deposition device

Growing community of inventors

Nirasaki, Japan

Mitsuhiro Tachibana