Samsung Electronics Co., Ltd.

Mitsuhiro Hata

Sang-Gyun Woo

Hyun-Woo Kim

Jung-hwan Hah

Sang-jun Choi

Man-hyoung Ryoo

Jung-Hwan Hah

Han-Ku Cho

Man-Hyoung Ryoo

Jin-young Yoon

Mask patterns include a resist pattern and a gel layer on a surface of the resist pattern having a junction including hydrogen bonds between a proton donor polymer and a proton acceptor polymer. Methods of forming the mask patterns and methods of fabricating a semiconductor device using the mask patterns as etching masks are also provided.

Mask patterns including gel layers for semiconductor device fabrication

Methods of forming an integrated circuit device may include forming a resist pattern on a layer of an integrated circuit device with portions of the layer being exposed through openings of the resist pattern. An organic-inorganic hybrid siloxane network film may be formed on the resist pattern. Portions of the layer exposed through the resist pattern and the organic-inorganic hybrid siloxane network film may then be removed. Related structures are also discussed.

Mask patterns for semiconductor device fabrication and related methods and structures

A polymer, a top coating layer, a top coating composition and an immersion lithography process using the same are disclosed. The top coating layer polymer may include a deuterated carboxyl group having a desired acidity such that the top coating layer polymer may be insoluble with water and a photoresist, and soluble in a developer. The polymer may be included in a top coating layer and a top coating composition.

Polymer, top coating layer, top coating composition and immersion lithography process using the same

A mask pattern for semiconductor device fabrication comprises a resist pattern formed on a semiconductor substrate, and an interpolymer complex film formed on the resist pattern, wherein the interpolymer complex film includes a network formed by a hydrogen bond between a proton donor polymer and a proton acceptor polymer.

Mask pattern for semiconductor device fabrication, method of forming the same, method for preparing coating, composition for fine pattern formation, and method of fabricating semiconductor device

Provided are a barrier coating composition and a method of forming photoresist pattern by an immersion photolithography process using the same. The barrier coating composition includes a polymer corresponding to formula I having a weight average molecular weight (Mw) of 5,000 to 100,000 daltons and an organic solvent, wherein the expressions 1+m+n=1; 0.1&#x2266;1/(1+m+n)&#x2266;0.7; 0.3&#x2266;m/(1+m+n)&#x2266;0.9; and 0.0&#x2266;n/(1+m+n)&#x2266;0.6 are satisfied; Rf is a Cto Cfluorine-substituted hydrocarbon group; and Z, if present, includes at least one hydrophilic group. Compositions according to the invention may be used to form barrier layers on photoresist layers to suppress dissolution of photoresist components during immersion photolithography while allowing the barrier layer to be removed by alkaline developing solutions.

Barrier coating compositions containing fluorine and methods of forming photoresist patterns using such compositions

Top coating compositions capable of being used in immersion lithography, and methods of forming photoresist patterns using the same, are provided. The top coating composition includes: a polymer, a base; and a solvent, wherein the polymer may be represented by Formula I: 

Top coating composition for photoresist and method of forming photoresist pattern using same

Provided are example embodiments of the invention including a range of polymer structures suitable for incorporation in barrier compositions for use, for example, in immersion photolithography in combination with a suitable solvent or solvent system. These polymers exhibit a weight average molecular weight (Mw) of 5,000 to 200,000 daltons and may be generally represented by formula I: wherein the expressions (1+m+n)=1; 0.1&#x2266;(1/(1+m+n))&#x2266;0.7; 0.3&#x2266;(m/(1+m+n))&#x2266;0.9; and 0.0&#x2266;(n/(1+m+n))&#x2266;0.6 are satisfied; R, Rand Rare Cto Calkyl, Cto Calkoxy and hydroxyl groups; and Z represents an alkene that includes at least one hydrophilic group. Barrier coating compositions will include an organic solvent or solvent system selected from Cto Calcohol-based organic solvents, Cto Calkane-based organic solvents and mixtures thereof.

Barrier coating compositions containing silicon and methods of forming photoresist patterns using the same

Mask patterns for semiconductor device fabrication and related methods

A mask pattern for semiconductor device fabrication comprises a resist pattern formed on a semiconductor substrate, and an interpolymer complex film formd on the resist pattern, wherein the interpolymer complex film includes a network formed by a hydrogen bond between a proton donor polymer and a proton acceptor polymer.

Mask pattern for semiconductor device fabrication, method of forming the same, method for preparing coating composition for fine pattern formation, and method of fabricating semiconductor device

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Suwon-si, South Korea

Mitsuhiro Hata