Tokyo Electron Limited

Motoyama Eng. Works, Ltd.

Tokyo Electron Yamanashi Limited

Tokyo Electron Tohoku Limited

Mitsuaki Komino

Yoshio Sakamoto

Osamu Uchisawa

Yoichi Ueda

Shosuke Endo

Kazuya Nagaseki

Akira Koshiishi

Hiroshi Nishikawa

Keizo Hirose

Kenji Ishikawa

Masayuki Tomoyasu

Kosuke Imafuku

Yukio Naito

Kazuhiro Tahara

Hiroto Takenaka

Yasuharu Sasaki

Masayuki Kitamura

Satoru Kawakami

Junichi Arami

Teruo Iwata

Hideaki Amano

Youichi Deguchi

Kouichi Kazama

Yasuhiro Chiba

Makoto Aoki

Yoshifumi Tahara

Koichi Yatsuda

Toshiaki Fujisato

Izumi Arai

Koichi Kazama

Kyo Tsuboi

Shiro Koyama

Kenji Nebuka

Masahide Watanabe

Masami Kubota

Tadashi Mitui

Takanori Sakurai

A susceptorincludes a heaterdisposed in a planar state, upper and lower ceramic-metal compositesA andB disposed so as to sandwich the heaterfrom above and from below, and a ceramic electrostatic chuckfor attracting and holding an object to be treated, W. The electrostatic chuck is joined to an upper surface of the upper ceramic-metal compositeA. The electrostatic chuckhas nearly the same coefficient of linear thermal expansion as that of the upper ceramic-metal compositeA. Thus, peeling or cracking of the electrostatic chuckdue to the difference in thermal expansion and contraction between the electrostatic chuckand the upper ceramic-metal compositeA can be prevented.

Electrode, susceptor, plasma processing apparatus and method of making the electrode and the susceptor

An electrode structure used in a plasma processing apparatus which performs a predetermined process on an object (W) to be processed by using a plasma in a process chamber () in which a vacuum can be formed. An electrode unit () has a heater unit () therein. A cooling block () having a cooling jacket () is joined to the electrode unit () so as to cool the electrode unit. A heat resistant metal seal member (A,B) seals an electrode-side heat transfer space () formed between the electrode unit and the cooling block. Electrode-side heat transfer gas supply means () supplies a heat transfer gas to the electrode-side heat transfer space. Accordingly, a sealing characteristic of the electrode-side heat transfer space does not deteriorate even in a high temperature range such as a temperature higher than 200&#xb0; C. and, for example, a range from 350&#xb0; C. to 500&#xb0; C., and the heat transfer gas does not leak.

Plasma processing apparatus, and electrode structure and table structure of processing apparatus

A number of process chambers connected to a transfer module can be increased after a cluster system provided with the transfer module is initially established. The transfer module transfers an object to be processed between a transfer chamber and at least one process chamber connected to the transfer chamber. A housing of the transfer module defines the transfer chamber, the housing having a substantially rectangular cross section so that a plurality of the housings are connectable to each other. A movable part is provided in the transfer chamber, the movable part being movable along a base surface provided in the housing of the transfer module. A transfer part is provided on the movable part, the transfer part holding the object to be processed and being movable between the transfer chamber and the process chamber. A drive mechanism drives the movable part, and a control unit controls motion of the movable part.

Transfer module and cluster system for semiconductor manufacturing process

An apparatus for treating a substrate which includes a chamber and an opening formed in the chamber allowing the substrate to be conveyed into the chamber or taken out thereof. The chamber, also, includes a detachable baffle plate that fits around an electrode. For treatment to commence, the substrate is placed on the electrode and the chamber is exhausted of or supplied with gases. The electrode is then vertically lifted together with the baffle plate and the baffle plate is moved either to a position that is higher in level than an upper end of the opening of the chamber or to a position that is lower in level than a lower end of the opening of the chamber. This allows the baffle plate to shield a region near the opening of the chamber from a treatment region and allows reaction products to be adhered to the baffle plate.

Plasma treatment method and apparatus

Claimed and disclosed is a treatment apparatus for treating a substrate under decompressed atmosphere, comprising: a chamber, an exhausting means for exhausting the chamber, a first electrode provided in the chamber on which the substrate is mounted or held, a second electrode provided in the chamber opposing the first electrode, a liquid supply source containing a liquid material from which a process gas is generated, a housing provided between the liquid supply source and the chamber to be communicated to the liquid supply source and the chamber, a porous heating unit arranged in the housing for generating the process gas by heating the liquid material supplied from the liquid supply source into the housing in order to vaporize the liquid material, a process gas introduction section provided between the housing and the chamber for guiding the process gas from the housing to the chamber and vibrators to vibrate the porous heating unit. The porous heating unit which is capable of generating heat for itself has an element for electrically heating the porous heating unit. This porous heating unit is arranged in the housing for generating the process gas by heating the liquid material supplied from the liquid supply source into the housing in order to vaporize the liquid material. The treatment apparatus further comprises a process gas introduction section disposed between the housing and the chamber for guiding the process gas from the housing to the chamber.

A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.

A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f,lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f,higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the water.

Flow sensors 41 and 42 for detecting a flow load including the presence of a flow of gas are provided in supply lines 2a through 2d for supplying a given gas into a treatment chamber 6. A CPU 40 is provided for previously storing control parameters corresponding to the presence of a flow of gas. The presence of a flow of gas or a flow of IPA is detected by the flow sensors 41, 42 or an IPA supply pump 43, and detected signals are transmitted to the CPU 40. On the basis of a control signal outputted from the CPU 40, a cartridge heater 14, inner and outer tube heaters 25 and 26 and an insulation heater 52 are controlled. Thus, a control parameter adopted in accordance with the presence of a flow of gas to be used is determined, so that the control parameter previously stored in a data table 100 is selected in accordance with a control mode to control the temperature or pressure of the gas.

Method and system for controlling gas system

A plasma etching apparatus has a central processing chamber, an upper exhaust chamber thereabove, and a lower exhaust chamber therebelow. The processing chamber, the upper exhaust chamber, and the lower exhaust chamber are airtightly formed by a central casing part, an upper casing part, and a lower casing part which are separably combined. The upper and lower exhaust chambers are respectively connected to upper and lower exhaust pumps. A susceptor having a support surface for supporting a target object, and an upper electrode or shower head opposing it are arranged in the processing chamber. A processing gas spouted through the shower head flows upward and downward toward the upper and lower exhaust chambers via the processing chamber.

Plasma processing apparatus

A vapor generating apparatus comprises: a convergent-divergent nozzle 50 having an inlet port 50a and an outlet port 50a for a gas for a vapor medium, the convergent-divergent nozzle 50 comprising a convergent nozzle portion 51a, which is formed so as to be tapered and narrowed from the inlet port 50a toward the outlet port 50b, and a divergent nozzle portion 51c, which is formed so as to be expanded from the convergent nozzle portion 51a toward the outlet port 50b; and a supply port 54 for a liquid to be evaporated, the supply port 54 being open to the divergent nozzle portion 51c of the convergent-divergent nozzle 50. Thus, it is possible to easily produce a gas using a smaller number of control factors, and it is possible to increase the amount of produced gas and decrease the vapor generating time.

Vapor generating method and apparatus using same

A drying processing apparatus for supplying a dry gas to a processing chamber 35, which houses therein semiconductor wafers W, to dry the semiconductor wafers W, including a heater 32 for heating N.sub.2 gas serving as a carrier gas; a vapor generator 34 for making IPA misty by using the N.sub.2 gas heated by the heater 32 and for heating the IPA to produce the dry gas; and a flow control element 36 for supplying a predetermined rate of N.sub.2 gas to the processing chamber 35. Thus, it is possible to improve the efficiency of heat transfer of N.sub.2 gas, and it is possible to increase the amount of produced IPA gas and decrease the time to produce IPA gas. In addition, it is possible to prevent the turbulence of atmosphere in the processing chamber 35 after the drying processing is completed.

Drying processing method and apparatus using same

A pressure and flow rate of a gas flowing into or out of a processing chamber are controlled, so as to decrease or increase an atmosphere in the processing chamber higher or lower than a target pressure to obtain a target pressure. During a first period, an opening speed of an opening degree adjusting device provided in an inlet pipe communicating to the processing chamber is controlled to a first target value toward a first predetermined functional approximation line (for example a function of second degree) as ideal value. During the rest of periods other than the first period, the opening speed is controlled stepwise to two or more predetermined target values so that the processing chamber reaches the target pressure. During a period before the first period, the opening speed may be controlled to a second target value among the two or more target values, based on a control amount for the opening degree adjusting device. During another period after the first period, the opening speed may be controlled toward a second predetermined functional approximation line (e.g., linear) as ideal value, which has a larger change than the first functional approximation line, until the second target value reaches the target pressure.

Method and device for controlling pressure and flow rate

A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f.sub.1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f.sub.2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.

Plasma treatment method utilizing an amplitude-modulated high frequency

A reduced pressure treatment unit comprising a plurality of treatment chambers conducting reduced pressure process treatment of a treatment object (wafer) and a normal pressure treatment unit conducting normal pressure process treatment of the treatment object, which are connected by a load lock chamber. The reduced pressure treatment unit comprises a plurality of reduced pressure process treatment chambers connected by means of a gate valve to a reduced pressure transport chamber equipped with a robot arm. The normal pressure treatment unit comprises a plurality of normal pressure process treatment chambers disposed in the vicinity of a robot arm. The load lock chamber is disposed at a position where the transport ranges of the two robot arms overlap. Also, the gate valve opening and closing the transport opening between the load lock and treatment chambers comprises a surface layer portion exposed to the atmosphere within the treatment chamber and a rear base portion whereby the surface layer portion is freely attached and removed with respect to the base portion by, e.g., screws, thus enabling independent replacement of the surface layer portion.

Reduced pressure and normal pressure treatment apparatus

A treatment apparatus comprises a heater including an insulator carrying a to-be-treated object thereon and a resistance heating element therein for heating the to-be-treated object, an electrical supply mechanism including feeders extending into a treatment chamber from outside and terminals connecting the feeders and the resistance heating element, and a metallic pipe surrounding the terminals and those portions of the feeders which extend in the treatment chamber. A treatment apparatus for discharging an exhaust gas from the treatment chamber through an exhaust pipe by means of a suction unit comprises a first heater in the inner wall of the treatment chamber for heating the gas in the treatment chamber, and a second heater for independently heating the exhaust gas in the exhaust pipe at various portions of the exhaust pipe.

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Tokyo, Japan

Mitsuaki Komino