Tokyo Electron Limited

Taisei Corporation

Other

Hitachi Cable, Inc.

Kyoto University

Misako Saito

Teruyuki Hayashi

Sadao Kobayashi

Kazuya Dobashi

Yoshihide Wakayama

Takenobu Matsuo

Tsuyoshi Wakabayashi

Hiroyuki Ito

Kiyoshi Watanabe

Masayuki Imafuku

Kensuke Inai

Naoya Hirayama

Shingo Hishiya

Jiro Matsuo

Yoshikazu Furusawa

Akitake Tamura

Kota Umezawa

Masaki Kondo

Toshio Seki

Satoshi Motouji

Kaoru Fujihara

Hideki Nishimura

Shigeyoshi Kojima

Takaaki Aoki

Kohei Tsugita

Iichi Hirao

Kaoru Fujiwara

Syoichi Sato

Yudai Ito

In order to remove a deposit adhered to the backside of the peripheral portion of a wafer, a cleaning gas containing carbon dioxide gas is set to a pressure that is slightly lower than the pressure corresponding to a vapor pressure line of carbon dioxide at a temperature in the nozzle, and a gas cluster of carbon dioxide is generated. A gas cluster of carbon dioxide generated under such a condition is in a state immediately prior to undergoing a phase change to a liquid and therefore is a gas cluster having a large cluster diameter and having molecules that are firmly solidified.

Substrate cleaning method, substrate cleaning apparatus and vacuum processing system

A substrate cleaning method for removing particles adhered to a substrate includes: acquiring particle information including diameters of the particles adhered to the substrate; controlling, based on the acquired particle information, a factor related to sizes of gas clusters having aggregates of atoms or molecules of a cleaning gas; ejecting the cleaning gas, at a higher pressure than a processing atmosphere where the substrate is provided, to the processing atmosphere and generating the gas clusters by adiabatic expansion; and removing the particles by irradiating the gas clusters in a perpendicular direction to a surface of the substrate. As a result, even if recesses for a circuit pattern are formed on the surface of the substrate, the particles in the recesses can be removed at a high removal rate.

Substrate cleaning method, substrate cleaning device, and vacuum processing device

Disclosed is a method for removing metal contamination present on an inner wall of a fluorine-based resin used in a chemical liquid supply line that supplies a chemical liquid to a workpiece. The method includes bringing some or all of a cleaning material reactive to a metal forming the metal contamination into a gaseous state; supplying the gaseous cleaning material to the chemical liquid supply line; and removing the metal contamination by reacting the gaseous cleaning material with the metal contamination present on the inner wall of the fluorine-based resin used in the chemical liquid supply line.

Method for removing metal contamination and apparatus for removing metal contamination

A virus detection device includes a diffusion unit configured to diffuse a virus in a gas as an inspection target into an aqueous solution containing a fluorescent antibody specifically adsorptive to the virus by bringing the gas into contact with the aqueous solution and configured to adsorb the fluorescent antibody to the virus in the gas; an atomization unit configured to atomize the aqueous solution and generate a mist group of the aqueous solution in which the gas is diffused; a fluorescence measuring unit configured to measure a fluorescence intensity of the mist group; and an air current generator configured to form an air current flowing toward the fluorescence measuring unit from the atomization unit.

Virus detection device and virus detection method

A method of analyzing a quartz member includes the step of supplying an etchant to the quartz member so as to etch the quartz member. The method also includes analyzing the etchant used in the supplying step. The etchant is supplied to a concave etchant receiving portion that is formed in the quartz member prior to the supplying step and has an inner wall thereof formed of the quartz member.

Method for analyzing quartz member

Provided is a method and apparatus for inspecting a defect of a shape formed on a substrate. Primary inspection is sequentially performed on specific patterns in a plurality of divided regions of the substrate by using an optical method, and one or more regions on which secondary inspection is to be performed are selected from the regions. One or more defects are detected by performing the secondary inspection using an electron beam on the selected regions.

Defect inspecting method and defect inspecting apparatus

A gas exhaust unit evacuates the inside of a vacuum transfer chamber at a constant exhaust rate. An gas exhaust valve is kept normally open, and a purge gas (Ngas) is supplied from a purge gas supply source into the vacuum transfer chamber via a mass flow controller (MFC) and an opening/closing valve. A main control unit controls a pressure in the vacuum transfer chamber to be within a specified range through a flow rate set value for the MFC while monitoring a pressure in the vacuum transfer chamber via a vacuum gauge. The main control unit determines occurrence of abnormality when the pressure exceeds a specified upper limit and then takes such actions as changing a flow rate set value for the MFC, giving an alarm and stopping the operation of a vacuum processing apparatus.

Vacuum processing apparatus and method

In a measuring apparatus, an atmosphere to be inspected taken out from a space to be inspected in a processing system is analyzed for organic gas concentration. The apparatus is provided with a collector having an approach connected to the space to be inspected. The collector is connected to a gas exhaust system and an adsorption material for preparing a captured organic gas is held in the collector. A temperature control mechanism including a heater controls the adsorption/desorption of organic gas through temperature control of the adsorption material. A carrier gas is supplied from a carrier gas supplying system in order to transfer the desorbed gas taken from the captured organic gas and the concentration of organic gas in the carrier gas transferring the desorbed gas is determined in a concentration measuring unit.

Apparatus and method for measuring the concentration of organic gas

An electric wire with coating of polyvinyl chloride family resin composition is disclosed which has a coating layer containing a polyvinyl chloride family resin composition comprising polyvinyl chloride family resin and one or more compounds selected from calcium soap, zinc soap and hydrotalcite. The polyvinyl chloride composition does not comprise either or both of a lead compound and a &#x3b2;-diketone compound having a melting point less than 100&#xb0; C. A plasticizer can be further added to the composition so as to obtain a heat-stable vinyl chloride composition. A cable covered with the polyvinyl chloride family resin composition is also disclosed, including a cable having electric wires coated with the polyvinyl chloride family resin composition.

Electric wire and cable with coating/covering of polyvinyl chloride family resin composition

A thermal treatment apparatusincludes a reaction tubefor containing waferscontaminated with organic substances having a heatercapable of heating the reaction tube; a first gas supply pipefor carrying oxygen gas into the reaction tube; and a second gas supply pipefor carrying hydrogen gas into the reaction tube. Oxygen gas and hydrogen gas are supplied through the first gas supply pipeand the second gas supply pipe, respectively, into the reaction tube, and the heaterheats the reaction tubeat a temperature capable of activating oxygen gas and hydrogen gas. A combustion reaction occurs in the reaction tubeand thereby the organic substances adhering to the wafersare oxidized, decomposed and removed.

Method and apparatus for treating article to be treated

An electric wire with coating of polyvinyl chloride family resin composition is characterized by having a coating layer including polyvinyl chloride family composition obtained from adding more than one of any calcium soap, zinc soap and hydrotalcite to resin including polyvinyl chloride resin as a main constituent, and further adding thereto plasticizer so as to obtain a heat-stable vinyl chloride composition, and further adding thereto as stabilization auxiliaries high-melting-point &#x3b2;-diketone compound having a melting point more than 100&#xb0; C. out of &#x3b2;-diketone compounds expressed by a general formula of R.CO.CH2.CO.R'.

Electric wire coated with polyvinyl chloride resin composition and cable

A chemical filter unit is made of a chemical filter and a filter life detection sensor . The filter life detection sensor is provided with an adsorption state detection sensor and a reference sensor to which a flow of air is blocked. The sensors and are made of the same filter material as the chemical filter with a pair of electrodes sandwiching the filter material. An oscillation circuit, in which the sensors and constitute a part of the oscillating conditions, detects changes in impedance of the sensors and based on the changes in oscillation frequencies. A measurement of the adsorption state detection sensor is corrected with a measurement of the reference sensor in order to remove effects of temperature and humidity, obtain a measurement corresponding to the amount of adsorption of chemical substances, and decide on the timing of replacing the chemical filter based on the corrected measurement.

Method for deciding on the timing of replacing a chemical filter, filter life detection sensor, chemical filter unit, and semiconductor manufacturing apparatus

A substrate processing method of processing a surface of a substrate in manufacture of a semiconductor device, characterized by comprising a surface processing step for making a substance having an adsorption heat higher than that of an organic matter whose adsorption on the surface of the substrate, which has been cleaned, is undesirable, adsorbed on the surface of the substrate, and a film formation step for forming a thin film on the surface of the substrate which was processed in the above step.

Method and device for treating substrate

An electronic/electric part used in a clean room in which the atmosphere is controlled to process a substrate in a semiconductor device industry, which contains a resin base material and additives added to the resin base material. The additives contain one or more materials selected from the group consisting of an anti-electrostatic agent made of a nonionic compound of a molecular weight of 350 or higher, an anti-oxidizing agent made of a phenolic compound of a molecular weight of 300 or higher, a lubricant, a plasticizer, a fire retardant, and a water repellent. The additives hardly releases gaseous organic substances from the resin base material under a condition where the part is used.

Growing community of inventors

Nirasaki, Japan

Misako Saito