Tokyo Electron Limited

Mirko Vukovic

Derrek Andrew Russell

John Stephen Drewery

Jozef Brcka

Glyn J Reynolds

Michael James Grapperhaus

Gerrit J Leusink

Ronald W Nasman

Anton J deVillers

Frank M Cerio, Jr

Tugrul Yasar

Bruce David Gittleman

Robert Daniel Clark

Kenji Suzuki

Daniel J Fulford

Rodney Lee Robison

Taejoon Han

Edward L Sill

James Grootegoed

Craig T Baldwin

Steven Gueci

Daniel Morvay

Brandon Byrns

Ryan Lloyd

Carl M Spearow

Bruce David Gittelman

Frank Michael Cerio

Embodiments of systems and methods are disclosed for inspecting features formed within and/or on a semiconductor substrate. More specifically, the present disclosure provides various embodiments of systems and methods to automatically adjust one or more parameters (or camera settings) used by a camera system to capture a stack of images of a feature formed within and/or on a semiconductor substrate before the images are processed to generate a three-dimensional (3D) reconstruction of the feature. In some embodiments, the disclosed systems and methods may filter the images included within the stack of images used for 3D reconstruction and dynamically determine when the camera system has captured enough images for 3D reconstruction of the feature. In doing so, the disclosed systems and methods may provide a more complete and accurate 3D reconstruction of the feature, while improving throughput of the wafer inspection process.

Methods to automatically adjust one or more parameters of a camera system for optimal 3D reconstruction of features formed within/on a semiconductor substrate

A substrate processing system including a processing chamber, a substrate holder configured to hold and rotate a substrate about an axis perpendicular to a working surface of the substrate; an electron emitter adapted to emit a first electron beam directed at a first surface of a peripheral region of the substrate, the first electron beam having a first beam energy and a first beam current sufficient to vaporize material from the first surface of the peripheral region of the substrate; an airflow system configured to direct a flow of gas across the working surface of the substrate; and an exhaust system configured to collect the gas comprising the material vaporized from the peripheral region.

Apparatus and methods for beam processing of substrates

Equipment for coating a wafer is disclosed, where the equipment includes a wafer holder configured to spin the wafer while holding the wafer; a rotary drive configured to spin the wafer holder; a nozzle configured to pour liquid onto a surface to be coated of the wafer; an annular duct disposed circumferentially around the wafer when the wafer is spun by the wafer holder, the duct configured to collect material ejected off an edge of the wafer; and an air knife disposed proximate a backside, the backside being opposite the side to be coated, where the air knife is configured to blow an air curtain through a slot onto an exposed edge region of the backside at a grazing angle of incidence to flow gas radially outward along the backside toward the annular duct.

Apparatus and method for spin processing

Light can be used to monitor coating a liquid on a substrate. By directing the light to a spot on the substrate, when the liquid passes through the spot, some light will be reflected, while some light will be scattered. Monitoring this behavior can indicate whether a substrate has been successfully coated with the liquid, as well as identifying defects. Further, coating times can be monitored to make process adjustments.

System and method for liquid dispense and coverage control

Systems and related methods are disclosed for atmospheric plasma processing of microelectronic workpieces, such as semiconductor wafers. For disclosed embodiments, a radio frequency (RF) generator generates an RF signal that is distributed to one or more plasma sources within a process chamber. The process chamber has an atmospheric pressure between 350 to 4000 Torr. The plasma sources are then scanned across a microelectronic workpiece to apply plasma gasses generated by the plasma generators to the microelectronic workpiece. The plasma sources can be individually scanned and/or combined in arrays for scanning across the microelectronic workpiece. Linear and/or angular movement can be applied to the plasma sources and/or the microelectronic workpiece to provide the scanning operation. Various implementations are disclosed.

Atmospheric plasma processing systems and methods for manufacture of microelectronic workpieces

A processing system is disclosed, having a process chamber that houses a substrate for exposure of a surface of the substrate to a travelling electromagnetic (EM) wave. The processing system also includes an EM wave transmission antenna configured to launch the travelling EM wave into the process chamber for the travelling EM wave to propagate in a direction substantially parallel to the surface of the substrate. The processing system also includes a power coupling system configured to supply EM energy into the EM wave transmission antenna to generate the travelling EM wave at a prescribed output power and in a prescribed EM wave mode during treatment of the substrate. The EM wave is recycled in the processing system in order to increase the efficiency of the microwave power use and eliminate the complexity of the resistive load cooling.

Electromagnetic wave treatment of a substrate at microwave frequencies using a wave resonator

A processing system is disclosed, having a process chamber that houses a substrate for exposure of a surface of the substrate to a travelling electromagnetic (EM) wave. The processing system also includes an EM wave transmission antenna configured to launch the travelling EM wave into the process chamber for the travelling EM wave to propagate in a direction substantially parallel to the surface of the substrate. The processing system also includes a power coupling system configured to supply EM energy into the EM wave transmission antenna to generate the travelling EM wave at a prescribed output power and in a prescribed EM wave mode during treatment of the substrate. The processing system also includes an EM wave receiving antenna configured to absorb the travelling EM wave after propagation through the process chamber.

Processing system for electromagnetic wave treatment of a substrate at microwave frequencies

Embodiments include a method for controlled cooling of a heated stage. The method includes setting a stage coupling to a maximum value and heating the stage to a process temperature. The method includes providing a wafer on the heated stage in a process chamber. The method includes performing a process on the wafer and reducing the heating stage coupling to a predetermined minimum value and reducing the heated stage temperature. The method includes removing the wafer from the heated stage and the process chamber. The heated stage is covered with a plurality of pixels, each pixel of the plurality of pixels include a level of emissivity and are equipped with an emissivity control device configured to independently adjust the level of emissivity of the pixel. The heated stage coupling is configured to achieve a predetermined radiative coupling and control the wafer cooling rate and target temperature.

Heated stage with variable thermal emissivity method and apparatus

Described herein are technologies to facilitate computed tomographic techniques to help identifying chemical species during plasma processing of a substrate (e.g., semiconductor wafer) using optical emission spectroscopy (OES). More particularly, the technology described herein uses topographic techniques to spatially resolves emissions and absorptions in at least two-dimension space above the substrate during the plasma processing (e.g., etching) of the substrate. With some implementations utilize optical detectors positioned along multiple axes (e.g., two or more) to receive incident incoming optical spectra from the plasma chamber during the plasma processing (e.g., etching) of the substrate. Because of the multi-axes arrangement, the incident incoming optical spectra form an intersecting grid.

Computed tomography using intersecting views of plasma using optical emission spectroscopy during plasma processing

A method and apparatus for treating a substrate in a processing system. The processing system includes a process chamber having a pumping system configured to evacuate the process chamber, a substrate holder coupled to the process chamber and configured to support the substrate and heat the substrate, and a process gas delivery system coupled to the process chamber and configured to introduce a process gas to a process space above an upper surface of the substrate. Furthermore, the process chamber includes one or more apparatus surfaces in radiative communication with the upper surface of the substrate and having a low emissivity and/or high reflectivity.

Method and apparatus for reducing substrate temperature variability

Improved measurement accuracy for determining the flow rate of precursor vapor to the deposition tool, particularly for use with low vapor pressure precursors, such as ruthenium carbonyl (Ru(CO)) or rhenium carbonyl (Re(CO)). In one embodiment, the system includes a differential pressure manometer is provided for measuring the flow rate. A method of measurement and calibration is also provided.

Method and system for measuring a flow rate in a solid precursor delivery system

An apparatus and related method for distributing process gas in a vapor deposition system is described. The gas distribution system includes a vertically movable piston within its plenum, and the movement of the piston controls the flow rate of process gas through the vapor distribution plate of the gas distribution system. The piston can be used to accommodate changes in processing parameters that affect flow characteristics and to create edge-enhanced, uniform, and center-enhanced profiles of deposited material on a substrate without the need to replace the vapor distribution plate.

Gas distribution system and method for distributing process gas in a processing system

A processing system for treating a substrate includes a process chamber, a substrate holder, a gas distribution system, and a flow modulation element. The process chamber has a pumping system to evacuate the process chamber. The substrate holder is coupled to the process chamber and supports the substrate. The gas distribution system is coupled to the process chamber. The gas distribution system introduces a process gas to a process space above an upper surface of the substrate. The flow modulation element is coupled to the substrate holder beyond a peripheral edge of the substrate. The flow modulation element includes one or more gas distribution openings that introduce an additive process gas beyond the peripheral edge of the substrate in a direction substantially away from the substrate. The additive process gas has a directional component substantially parallel to the upper surface of the substrate.

Method and system for improving deposition uniformity in a vapor deposition system

A ceramic window in an iPVD module is provided with features that reduce heating of the window as a result of metal film deposits on the window. Dielectric dissipation and resistive heating of the metal film are reduced by the features. Reducing of the window heating is provided by either shaping the window surface on the chamber side of the window or providing structurally floating features to block at least a portion of a conductive path from forming on the chamber side window surface. The shaping can produce contours that prevent current paths from being created in the forming metal film. In addition or in the alternative, texture on the chamber side surface of the window is provided to increase surface area and thereby reduce film thickness.

Thermal stress-failure-resistant dielectric windows in vacuum processing systems

A plasma processing system and method provide an internal coil in a vacuum chamber for maintaining a high density plasma therein in a manner that may have a less restrictive requirement on metal flux shielding than when the shield protects a dielectric window. The shield also shields the coil from plasma heat load. The coil need not be actively cooled. Some metal is allowed to pass through the shield and deposit on the coil. This leads to a thinner shield with less complicated slots than for shields in external coil configurations. Good RF transparency of the shield is a result of the much simpler shield shape. The coil is not sputtered and is thus not consumable. The coil is enclosed in a small conductive space, reducing its inductance, resulting in reduced coil current and voltage, in turn simplifying the design and construction of the tuning network and RF connectors. Stiffeners support the coil and are profiled to avoid formation of conductive paths forming from metal deposits.

Growing community of inventors

Slingerlands, NY, United States of America

Mirko Vukovic