Hitachi, Ltd.

Hitachi Chemical Company, Ltd.

Minoru Toriumi

Shinji Okazaki

Hiroshi Shiraishi

Tsuneo Terasawa

Shigeru Koibuchi

Toshiyuki Yoshimura

Ryotaro Irie

Naoko Miura

Disclosed is a pattern forming method including the steps of preparing second grating stripes disposed near a reticle having a mask pattern to be projected, modulating the mask pattern by emission of a light, and demodulating the modulated mask pattern by first grating stripes formed within a photosensitive film made of a material capable of reversibly inducing photochemical reaction, thereby forming the modulated image of the mask pattern within a resist film disposed under the photosensitive film. With this method, various kinds of fine patterns each being smaller than the resolution limit of a projection exposure tool used are formed.

Pattern forming method and projection exposure tool therefor

In forming a thin film pattern, first a seed material film is formed on a substrate and then exposed using electron beam lithography, for example, in the shape of the pattern. The latent image is then removed and an oriented material is deposited on one of the seed material and the substrtate, which have different hydrophilicity properties, to form the pattern. The oriented film is formed by an LB film forming method, in one example, and in another example the LB film material is a cresol novolak resin having a proportion of p-cresol novolak to m-cresol novolak of at least 20%.

Method for forming a pattern and forming a thin film used in pattern

A photosensitive composition comprising (a) a photosensitive component such as an aromatic diazo compound or an aromatic azide, (b) a polymer and (c) a quaternary alkylammonium salt wherein each straight- or branched-chain alkyl group has 1 to 7 carbon atoms is suitable for producing a positive type or negative type photresist excellent in contrast and sensitivity in the microlithography of semiconductor elements.

Photosensitive composition

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Hachiohji, Japan

Minoru Toriumi