Fujitsu Corporation

Minoru Nakada

Masanori Onodera

Hirohisa Matsuki

Eiji Watanabe

Kenichi Nagashige

Yutaka Makino

Joji Fujimori

Hiroyuki Yoda

Kunio Kodama

Kenichi Kado

A semiconductor substrate is prepared which has a principal surface, an exposed pad made of conductive material being formed in a partial area of the principal surface, and the other area of the principal surface being covered with a first insulating film. A base conductive film is formed on the first insulating film and the pad. A photoresist film having a thickness of 50 &mgr;m or thicker is formed on the base conductive film. An opening is formed through the photoresist film in an area corresponding to the pad to expose a partial surface area of the base conductive film. A conductive bump electrode is deposited on the base conductive film exposed on a bottom of the opening. The photoresist film is removed. This method is suitable for making a fine pitch between bump electrodes.

Semiconductor device with flip chip bonding pads and manufacture thereof

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Yokohama, Japan

Minoru Nakada