Tokyo Electron Limited

Minoru Kubota

Kenichi Miyamoto

Hideya Tanaka

Kousuke Yoshihara

Koshi Muta

Hideharu Kyoda

Walter Swanson

Hideharu Kyouda

Shinichi Hatakeyama

Kouzou Tachibana

Thomas E Winter

Takahiro Okubo

Naoki Shibata

Hiroyuki Ide

Takafumi Hasimoto

Ryoji Higuchi

Hiroyuki Kudo

An end of polishing of a wafer is determined for each of wafers at a high accuracy. A wafer processing method includes: a first process of acquiring an initial state of a processing target surface of a wafer; a second process of forming a coating film on the wafer after the first process; a third process of polishing the processing target surface of the wafer by a polishing member based on initial polishing conditions in a state where the polishing member is in contact with the processing target surface of the wafer; a fourth process of acquiring a processed state of the processing target surface of the wafer after the third process; and a fifth process of determining an end of polishing, an insufficiency in polishing, or an excess in polishing based on the initial state and the processed state.

Substrate processing apparatus, substrate processing method, and computer-readable recording medium

A developing method includes: forming a liquid pool of a diluted developing solution diluted with pure water in a central portion of a substrate; forming a liquid film of the diluted developing solution on a surface of the substrate by accelerating rotation of the substrate to diffuse the liquid pool of the diluted developing solution on the entire surface of the substrate; and then supplying a developing solution onto the substrate. Supplying a developing solution includes: supplying the developing solution from a developing solution supply nozzle having a liquid contact surface while securing a gap having a predetermined size between the developing solution supply nozzle and the substrate; and moving the developing solution supply nozzle in a radial direction passing through a center of the substrate while forming a liquid pool of the developing solution between the substrate and the liquid contact surface of the developing solution supply nozzle.

Developing method, computer-readable storage medium and developing apparatus

A developing treatment method supplies a developing solution onto a substrate to develop a resist film on the substrate with a predetermined pattern exposed thereon. The method supplies pure water to a central portion of the substrate to form a puddle of the pure water, and then moves a nozzle in a radial direction passing through a center of the substrate while supplying a developing solution to the puddle of the pure water from the nozzle with a wetted surface of the nozzle in contact with the puddle of the pure water, to form a puddle of a diluted developing solution on the substrate. The method then rotates the substrate to diffuse the puddle of the diluted developing solution over an entire surface of the substrate; and then supplies a developing solution to the substrate to develop the substrate.

Developing treatment method, non-transitory computer storage medium and developing treatment apparatus

A peripheral exposure method for performing an exposure treatment by illuminating light to a periphery of a resist film formed on a substrate to be processed is discussed. The method includes rotating the substrate to be processed on a horizontal plane, bringing a coolant gas into contact with the periphery of the resist film of the substrate to be processed which is being rotated, and cooling the substrate to be processed. Further, the method also includes measuring a temperature of the substrate to be processed, wherein when the temperature of the substrate to be processed is equal to or less than a predetermined temperature, the exposure treatment is performed.

Peripheral exposure method and apparatus therefor

There is provided a coating method which can apply a coating solution uniformly onto a substrate surface while reducing the amount of the coating solution supplied. The coating method for applying a coating solution onto a wafer includes the steps of: supplying a solvent for the coating solution onto the wafer to form an annular liquid film of the solvent in a peripheral area of the wafer; supplying the coating solution to the center of the wafer while rotating the wafer at a first rotational speed (time t-t); and allowing the coating solution to spread on the wafer by rotating the wafer at a second rotational speed which is higher than the first rotational speed (time t-t). The supply of the solvent is continued until just before the coating solution comes into contact with the liquid film of the solvent (time t-t).

Coating method, computer storage medium and coating apparatus

A coating apparatus includes: a rotation holding unit configured to hold and rotate a substrate; a coating liquid supply unit configured to supply a coating liquid onto a surface of the substrate; and a control unit configured to control the rotation holding unit and the coating liquid supply unit. The control unit performs: controlling the coating liquid supply unit to supply the coating liquid onto an encircling line surrounding a rotational center of the substrate while controlling the rotation holding unit to rotate the substrate; followed by controlling the coating liquid supply unit to supply the coating liquid onto a central area; and followed by controlling the rotation holding unit to rotate the substrate at an angular velocity greater than that when the coating liquid is supplied onto the encircling line.

Coating apparatus, coating method and storage medium

A liquid processing apparatus includes a substrate holding unit arranged within a processing cup and configured to horizontally hold a substrate, a rotating mechanism configured to rotate the substrate holding unit about a vertical axis, a processing liquid supply unit configured to supply a processing liquid onto a surface of the substrate, and an exhaust mechanism configured to discharge an atmospheric gas around the substrate. The exhaust mechanism includes an exhaust flow path connected to an exhaust port formed at the processing cup, a circulation flow path branched from the exhaust flow path and configured to communicate with the processing cup, a gas liquid separator, a first regulator valve installed at one end of the exhaust flow path, and a second regulator valve installed at the other end of the exhaust flow path.

Liquid processing apparatus, liquid processing method and storage medium for liquid processing

An apparatus and method for dispensing a solution on a substrate is described in which the solution is dispensed through a solution nozzle assembly while the substrate is rotated. As the solution is dispensed, the solution on the substrate forms a wave front that radially spreads from the substrate center to the substrate edge. The dispensing of the solution is performed in such a way that the solution is dispensed at a radial location substantially equivalent to or less than the radial location of the wave front at any instant in time.

Method and system for dispensing resist solution

The present invention is a processing unit for processing a substrate in a casing, having: a transfer port provided in the casing through which the substrate passes when the substrate is carried into the casing by a carrier for carrying the substrate; and an inflow restricting device for controlling an atmosphere outside the casing to restrict the atmosphere from flowing into the casing through the transfer port. According to the present invention, it is possible to control the atmosphere outside the casing to restrict the atmosphere from flowing into the casing, which restricts the temperature of the substrate in the processing unit from partially varying and the temperature distribution from becoming ununiform within a plane of the substrate.

Substrate processing unit

A substrate washing apparatus, comprising a spin chuck for holding and rotating a substrate W, a brushing section including a scrubbing member which is brought into contact with a washing surface of the substrate held on the spin chuck and revolved on its own axis together with rotation of the spin chuck, a washing liquid supply mechanism for supplying a washing liquid through the brushing section onto the washing surface of the substrate, a pressure control mechanism for controlling a pressing force of the scrubbing member against the washing surface of the substrate, and a moving means for moving the scrubbing member relative to the substrate in a radial direction of the substrate, wherein the scrubbing member includes an abutting portion which is brought into contact with the washing surface of the substrate, and a non-contact peripheral portion positioned about the abutting portion and formed not to contact the washing surface of the substrate when the abutting portion is in contact with the washing surface of the substrate.

Apparatus and method for washing substrate

An apparatus for washing a substrate comprises a spin chuck for holding and rotating a substrate, washing brush mechanism for supplying a washing liquid onto a surface of the substrate held on the spin chuck, and applying a physical force to contaminants present on a surface of the substrate so as to remove contaminants, a supporting arm for supporting the washing brush mechanism, an arm driving mechanism for driving the supporting arm to move the washing means along the surface from a central portion toward a peripheral portion of the substrate, and a control device for controlling the operation of at least one of the washing means, the spin chuck and the arm driving mechanism so as to control the physical force acting on the contaminants present on the surface of the substrate depending on the state of the contaminants.

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Koshi, Japan

Minoru Kubota