Mitsubishi Denki Kabushiki Kaisha

Maruo Calcium Company Limited

Other

Renesas Technology Corp.

Mitsubishi Electric Engineering Company, Limited

Minoru Hanazaki

Shiro Minayoshi

Hidehiko Nishioka

Masaaki Tsuchihashi

Masakazu Taki

Shigeo Takiyama

Toshio Komemura

Mutumi Tuda

Kouichi Ono

Hiroki Ootera

Norimasa Maida

Seiya Shimizu

Toshihiko Minami

Mitsunobu Aoyama

Takayuki Ikushima

Naofumi Saito

Shinji Nakaguma

Kouji Oku

Koichiro Nakanishi

Masako Takahashi

Sakae Kuroda

Shinji Yamaguchi

Kenji Shintani

Mutsumi Tsuda

Hirotoshi Ise

Toshihiko Noguchi

Toshiki Oono

Naofumi Saitoh

Noritsugu Ebisuya

Kazuyuki Fujii

Kenji Shirakawa

Hiroyuki Hisakuni

Gen Kawaharada

Hideki Oura

Nobuhiro Nishizaki

Keiichi Sugahara

In remote plasma cleaning, it is difficult to locally excite a plasma because the condition is not suitable for plasma excitation different from that at the time of film formation and a method using light has a problem of fogginess of a detection window that cannot be avoided in a CVD process and is not suitable for a mass production process. In order to solve these problems, the outline of the present invention is a manufacturing method of a semiconductor integrated circuit device in which a step of depositing a desired film by exciting a reaction gas using a plasma in a reaction chamber and a step of introducing a cleaning gas excited in a remote plasma excitation chamber into the reaction chamber and performing remote plasma cleaning of the reaction chamber in an atmosphere without plasma excitation are repeated, wherein a local plasma is generated in the reaction chamber or a vacuum system for evacuating the reaction chamber by a plasma excitation system of capacitively coupled type and the end point of the remote plasma cleaning is detected by monitoring the electrical characteristic of the plasma.

Manufacturing method of semiconductor integrated circuit device

A high-frequency current detector of a plasma processing apparatus detects a high-frequency current produced when high-frequency power in the range that does not cause generation of plasma in a chamber is supplied from a high-frequency power supply source to the chamber. The high-frequency current detector outputs the detected high-frequency current to a computer. The computer compares the high-frequency current received from the high-frequency current detector with a reference high-frequency current. When the received high-frequency current matches the reference high-frequency current, the computer determines that the process performance is normal. Otherwise, the computer determines that the process performance is abnormal. In this way, high-frequency characteristics specific to the apparatus are detected and the process performance are evaluated based on the detected high-frequency characteristics.

Plasma processing apparatus capable of evaluating process performance

A gas analyzer for a semiconductor treater improved to be capable of monitoring leakage or change of gas composition influencing treatability of the semiconductor treater in situ is provided. A duct is provided on the outer wall of a chamber of the semiconductor treater for taking out gas to be analyzed from the chamber. A gas analytic chamber stores the gas to be analyzed taken out through the duct. A discharge formation part is mounted in the vicinity of the gas analytic chamber. The discharge formation part includes a high frequency generation coil generating a high frequency and forming a plasma of the gas to be analyzed in the gas analytic chamber. This gas analyzer further comprises a spectrometer analyzing the emission wavelength of the plasma of the gas to be analyzed.

Gas analyzing method and gas analyzer for semiconductor treater

There is described a wafer processing apparatus intended to efficiently secure a wafer on an electrostatic chuck. A heater is disposed in a processing chamber for heating a wafer, and a dielectric plate for supporting the wafer is also disposed in the processing chamber. First and second electrodes are embedded in the dielectric plate, and first and second variable D.C. power supplies are disposed so as to supply voltages to the first and second electrodes, respectively. After the wafer has been placed on an electrostatic chuck, the wafer is pre-heated before being subjected to attraction force. After completion of the pre-heating phase, the first and second D.C. power supplies supply voltages to the first and second electrodes, thus securing the wafer on the dielectric plate.

Wafer processing apparatus

A plasma processing apparatus mainly comprises a processing chamber (,) formed by a vacuum vessel, a magnetic field forming coil (,) arranged around the processing chamber for forming a rotating magnetic field and gas supply means (,) supplying various gases to the processing chamber (,). The processing chamber (,) is divided into a reaction chamber (,) forming plasma with a partition wall (,) and a buffer chamber (,) discharging externally supplied gases with pressure difference. The reaction chamber (,) includes a high-frequency electrode arranged oppositely to the buffer chamber (,). The gas supply means (,) includes pulse gas valves (,and,) for pulsatively supplying gases to the processing chamber (,). Thus provided are a plasma processing method and a plasma processing apparatus capable of uniformly processing a wafer having a large diameter and reducing RIE lag with respect to a fine etching pattern.

Plasma processing method and plasma processing apparatus

A plasma processing apparatus capable of attracting and holding a semiconductor wafer reliably once the processing of the semiconductor wafer is started includes: a vacuum chamber; an electrode arranged inside the vacuum chamber; a dielectric film formed on a surface of the electrode; a gas supply port leading to the vacuum chamber; a high-frequency electric power supply connected to the electrode; a memory operation unit which depends on a processing condition for producing a desired plasma, to calculate and output the voltage value corresponding to the sum of a value of a minimal actual attract and hold voltage required to be applied between one surface of the semiconductor wafer mounted on the dielectric film and a surface of the dielectric film to attract and hold one surface of the semiconductor wafer on the surface of the dielectric film and a value of a self-bias voltage generated at the other surface of the semiconductor wafer when the desired plasma is produced; and an electrostatic chuck power supply for applying the voltage corresponding to the voltage value calculated in the memory operation unit to the electrode. An electrostatic attract and hold vacuum chucking method employed in the plasma processing apparatus is also disclosed.

Plasma processing apparatus capable of reliably, electrostatically attracting and holding and thus fixing semiconductor wafer

Two electrodes are provided in a processing container so as to be opposed to each other. Main etching processing gases of Cl,and BCl,are introduced into the processing container, and a deposition-type gas composed by least two of C, H, and F, such as a CHF,gas or a CF,gas, is added thereto. A plasma is generated by applying a pulse-modulated high-frequency voltage between the two electrodes that hold a sample to be etched. The sample is etched by using the plasma.

Etching apparatus, etching method, manufacturing method of a semiconductor device, and semiconductor device

A plasma generating apparatus capable of improving the uniformity of a plasma processing and coping with a larger diameter of a substrate is obtained. Microwaves are distributed and emitted from a waveguide through the branching portions of a T branch to four rod antennas. The microwaves are introduced through four dielectric tubes into a vacuum vessel. In the vacuum vessel, a multi-cusp magnetic field and an electron cyclotron resonance region are caused by permanent magnets located around the vessel and, by an interaction between a vibrational electric field of the microwaves and a magnetic field, highly uniform plasma is generated in a region where a substrate or the like is subjected to a plasma processing.

Plasma generating apparatus with multiple microwave introducing means

There is provided a plasma generating apparatus comprising: a waveguide for guiding a microwave; a vacuum vessel connected to the waveguide, having a means for supplying a gas for discharging electrons and a means for evacuating; and a dielectric member in a tube-like shape or a rod-like shape which is inserted in the vacuum vessel, wherein the dielectric member is provided with a means for emitting the microwave, whereby it is possible to apply the electric power of microwave effectively to plasma of high density exceeding so-called cut-off density and to homogenize the distribution of plasma in the vacuum vessel.

Magnetically enhanced microwave plasma generating apparatus

Fine particles of petaloid porous hydroxyapatite and process for

An introduction pipe for gas or the like for introducing water or water vapor is connected to a vacuum process chamber. The vacuum process chamber is evacuated through an evacuation exhaust port, and the introduced water vapor or water is solidified or liquefied by adiabatic expansion using a floating fine particle as a core. The particle on which the water vapor or the like is solidified or liquefied is discharged outside the vacuum process chamber. Thus, a semiconductor manufacturing device capable of reducing the number of fine particles on a wafer without decreasing uptime ratio is achieved.

Semiconductor manufacturing device and method of removing particles

An additive for synthetic resins is provided. The additive comprises particles surface-coated with a petaloid porous hydroxyapatite having a chemical formula Ca.sub.5 (PO.sub.4).sub.3 (OH) and the petaloid porous hydroxyapatite is not less than 5% by weight of the particles. The additive can be added to any kinds of synthetic resins. If the additive is used in a polyethylene film, blocking of the film is not only prevented, but good transparency and good anti-scratch ability are imparted, and if the additive is used in a polyester, a film having good slipperiness, anti-abrasion and less coarse protrusions can be provided.

Additive for synthetic resins and a synthetic resin composition

Additive for synthetic resins and synthetic resin compositions

A monodisperse spherical, ellipsoidal or plate-like vaterite calcium carbonate almost free from secondary aggregation is disclosed. The vaterite type calcium carbonate is prepared by the steps of adding 5-20 times mol equivalent of water with respect to unslaked lime to a methanol suspension of 0.5-12 weight % of unslaked lime and/or slaked lime (in case of slaked, conversion is to be made into unslaked lime of the same mol) to prepare of a mixture of methanol, unslaked lime and/or slaked lime and water, letting carbon dioxide gas through said mixture, adjusting the temperature in the carbonation reaction system to not less than 30.degree. C. before arrival of conductivity within carbonation reaction system at the maximal point on conductivity variation curve in the carbonation reaction system and adjusting the time from start of carbonation reaction to the point where the conductivity is 100 .mu.S/cm to be less than 1,000 minutes. A method for growing or controlling in shape the vaterite calcium carbonate used as matrix is also disclosed.

Method for manufacturing monodisperse vaterite type calcium carbonate

A monodisperse spherical, ellipsoidal or plate-like vaterite calcium carbonate almost free from secondary aggregation is disclosed. The vaterite type calcium carbonate is prepared by the steps of adding 5-20 times mol equivalent of water with respect to unslaked lime to a methanol suspension of 0.5-12 weight % of unslaked lime and/or slaked lime (in case of slaked, conversion is to be made into unslaked lime of the same mol) to prepare of a mixture of methanol, unslaked lime and/or slaked lime and water, letting carbon dioxide gas through said mixture, adjusting the temperature in the carbonation reaction systemto not less than 30.degree. C. before arrival of conductivity within carbonation reaction system at the maximal point on conductivity variation curve in the carbonation reaction system and adjusting the time from start of carbonation reaction to the point where the conductivity is 100.mu. S/cm to be less than 1,000 minutes. A method for growing or controlling in shape the vaterite calcium carbonate used as matrix is also disclosed.

Monodisperse vaterite type calcium carbonate, its manufacturing method

Growing community of inventors

Hyogo, Japan

Minoru Hanazaki