Samsung Electronics Co., Ltd.

Minhwan Seo

Jungchul Lee

Sangwoo Bae

Wondon Joo

Ingi Kim

Jiyoung Chu

Taehyun Kim

Hyungjin Kim

Sungho Jang

Seulgi Lee

Eunhee Jeang

Sungmin Ahn

Akinori Okubo

Sangmin Lee

Jiyoung Kim

Youngjoo Lee

Seungwoo Lee

Yunpyo Hong

Jungyu Lee

Jaehwang Jung

Jinseob Kim

Gwangsik Park

Jangwoon Sung

Janghwi Lee

Myeongock Ko

Sangjoon Hong

Ono Kazuya

Anton Sofronov

Aleksandr Shorokhov

Anton Medvedev

Maksim Riabko

Boris Afinogenov

Dongyoon Koo

Kyunghun Han

An optical apparatus includes a folding mirror configured to direct first and second illumination lights on first and second alignment marks respectively and reflect first and second reflected lights reflected from the first and second alignment marks in different horizontal directions respectively, first and second lenses arranged respectively in optical paths of the first and second reflected lights reflected from the first and second reflective surfaces of the folding mirror, first and second reflection portions configured to reflect the first and second reflected lights passing through the first and second lenses respectively, and a beam splitter prism configured to divide an illumination light incident through a first surface into the first and second illumination lights and direct to the first and second reflection portions, and transmit the first and second reflected lights reflected by the first and second reflection portions through a second surface.

Optical assembly for alignment inspection, optical apparatus including the same, die bonding system and die bonding method using the same

A method of bonding a die to a wafer using a die bonding system measures, using an obtained image showing interference fringes, a parallelism between the die and the wafer. In some embodiments, parallelism and die deformation are detected using interference fringes produced by an optical apparatus of the die bonding system. A parallelism measurement optical apparatus includes a light source, an optical assembly configured to control polarization of a reference light and a measurement light. In some embodiments, the measurement light is sequentially incident on and reflected from a first measurement surface and a second measurement surface that are spaced apart along a vertical direction to face each other, and is emitted to have information on parallelism between the first and second measurement surfaces. In some embodiments, a first polarizer is configured to interfere the reference light and the measurement light emitted from the optical assembly with each other. A light detector is configured to detect an interference signal of lights including the interference fringes.

Optical assembly for parallelism measurement, optical apparatus including the same, die bonding system and die bonding method using the same

Provided are a level sensor configured to detect a height level of a substrate, and a substrate processing apparatus including the level sensor. The level sensor includes a measurement light source configured to radiate measurement light toward the substrate, a prism configured to split reflected light of the measurement light into first polarized light and second polarized light and generate a first optical path length difference between the first polarized light and the second polarized light, an optical path length modulator configured to keep constant an optical path length of the first polarized light and periodically change an optical path length of the second polarized light, and a detector configured to detect the first optical path length difference based on an interference signal between the first polarized light and the second polarized light.

Level sensor and substrate processing apparatus including the same

Provided is a polarization measuring device including a stage on which a measurement target is provided, a light source assembly configured to emit incident light, a first polarimeter configured to polarize the incident light, a second polarimeter configured to polarize reflected light reflected from the measurement target that is irradiated by the incident light, a filter assembly configured to remove noise from the reflected light, and a detector configured to receive the reflected light and measure an intensity of the reflected light and a phase of the reflected light.

Polarization measuring device and method of fabricating semiconductor device using the same

Provided is a hyperspectral imaging (HSI) apparatus. The HSI apparatus includes: a first slit plate configured to introduce an output beam; a first aspherical mirror configured to reflect the introduced output beam; a first grating having a planar reflective surface, the first grating configured to generate a plurality of first split beams by splitting the output beam after being reflected by the first aspherical mirror; and a first camera configured to detect the plurality of first split beams.

Hyperspectral imaging (HSI) apparatus and inspection apparatus including the same

A substrate inspection apparatus includes a light source unit, a pulsed beam matching unit, a substrate support unit, an incidence angle adjusting unit, and a detecting unit. The light source unit emits a first laser beam having a first wavelength and a second laser beam having a second wavelength. The pulsed beam matching unit matches the first laser beam and the second laser beam to superimpose a pulse of the first laser beam on a pulse of the second laser beam in time and space. The substrate support unit supports a substrate to be inspected. The incidence angle adjusting unit adjusts angles of incidence of the matched first laser beam and second laser beams to irradiate the first laser beam and the second laser beam on the substrate, and mixes the first laser beam and the second laser beam to generate an evanescent wave on the substrate. The evanescent wave generates scattered light due to a defect of the substrate. The detecting unit detects the scattered light generated due to the defect of the substrate.

Substrate inspection system and method of manufacturing semiconductor device using substrate inspection system

A wafer inspection apparatus includes: an objective lens on an optical path of first and second input beams; and an image sensor configured to generate an image of the wafer based on scattered light according to a nonlinear optical phenomenon based on the first and second input beams, wherein the first input beam passing through the objective lens is obliquely incident on the wafer at a first incident angle with respect to a vertical line that is normal to an upper surface of the wafer, the second input beam passing through the objective lens is incident on the wafer at a second incident angle oblique to the vertical line that is normal to the upper surface of the wafer, and the first and second incident angles are different from each other.

Wafer inspection apparatus and system including the same

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Hwaseong-si, South Korea

Minhwan Seo