Rohm & Haas Electronic Materials LLC

Dow Global Technolgoies LLC

Rohm and Haas Electronic Materials Korea Ltd.

Dupont Electronic Materials International, LLC

Rohm and Haas Electronics Materials LLC

Mingqi Li

Cheng-Bai Xu

Cong Liu

Emad Aqad

Phillip Dene Hustad

Irvinder Kaur

Shintaro Yamada

Peter Trefonas, Iii

Deyan Wang

Jong Keun Park

Doris H Kang

Chunyi Wu

Vipul Jain

Jin Wuk Sung

Huaxing Zhou

James F Cameron

Gerhard Pohlers

Jieqian Zhang

Kevin Rowell

Owendi Ongayi

Sung Wook Cho

Gregory P Prokopowicz

Li Cui

Charlotte A Cutler

Xisen Hou

Joseph Mattia

Jeffrey D Weinhold

William Williams, Iii

Valeriy V Ginzburg

Rahul Sharma

Joshua A Kaitz

Suzanne M Coley

Paul J LaBeaume

Thomas Cardolaccia

Amy M Kwok

Choong-Bong Lee

Christopher P Sullivan

Robert L Auger

Tomas Marangoni

Joon Seok Oh

James W Thackeray

George G Barclay

Jin Hong Park

Clark H Cummins

Matthias Stefan Ober

Ke Yang

Jibin Sun

Jae Hwan Sim

Sheng Liu

Jae-Bong Lim

Cecily Andes

Jung Kyu Jo

Cheng Bai Xu

Mitsuru Haga

Charlotte Cutler

Jason A DeSisto

Ching-Lung Chen

Joon-Seok Oh

Gerhard Polhers

Colin Liu

Tsutomu Asazuma

Doris Kang

A polymer, comprising a first repeating unit derived from a first monomer comprising a single ester acetal group, and a second repeating unit derived from a second monomer comprising a plurality of ester acetal groups.

Photoresist compositions and pattern formation methods

Photoresist topcoat compositions, comprising: a first polymer that is aqueous base soluble and is present in an amount of from 70 to 99 wt % based on total solids of the composition; a second polymer comprising a repeat unit of general formula (IV) and a repeat unit of general formula (V): wherein: Rindependently represents H, halogen atom, C1-C3 alkyl, or C1-C3 haloalkyl; Rrepresents linear, branched or cyclic C1 to C20 fluoroalkyl; Rrepresents linear, branched or cyclic C1 to C20 fluoroalkyl; Lrepresents a multivalent linking group; and m is an integer of from 1 to 5; wherein the second polymer is free of non-fluorinated side chains; and wherein the second polymer is present in an amount of from 1 to 30 wt % based on total solids of the composition and a solvent. The invention finds particular applicability in the manufacture of semiconductor devices.

Photoresist topcoat compositions and methods of processing photoresist compositions

A photoresist composition comprising a polymer, a photoacid generator, an additive comprising a tertiary carbon atom as a ring-forming atom of a lactone ring, and a solvent.

Disclosed herein is a pattern formation method, comprising (a) applying a layer of a photoresist composition over a semiconductor substrate, (b) pattern-wise exposing the photoresist composition layer to i-line radiation; and (c) developing the exposed photoresist composition layer to provide a resist relief image; wherein the photoresist composition comprises a non-ionic photoacid generator; a solvent; a first polymer and a second polymer; and wherein the first polymer comprises a polymeric dye.

Disclosed herein is a copolymer comprising first polymerized units of the formula (1);

Polymers useful as surface leveling agents

Topcoat compositions are provided that can be used in immersion lithography to form photoresist patterns. The topcoat compositions include a solvent system that comprises 1) a first organic solvent represented by formula (I),

Topcoat compositions and photolithographic methods

New photoresist and topcoat compositions are provided that are useful in a variety of applications. In one aspect, new photoresist compositions are provided that comprise: (a) a first matrix polymer; (b) one or more acid generators; and (c) one or more additive compounds of Formulae (I) and/or (II).

Photoresist compositions and methods

A photoresist composition comprises a first polymer formed by free radical polymerization. The first polymer comprises polymerized units formed from a monomer that comprises an ethylenically unsaturated double bond and an acid-labile group; a photoacid generator; a quencher of formula (1): and a solvent.

Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the aromatic sulfonic acid is of general formula (I): wherein: Arrepresents an aromatic group; Rindependently represents a halogen atom, hydroxy, substituted or unsubstituted alkyl, substituted or unsubstituted heteroalkyl, substituted or unsubstituted carbocyclic aryl, substituted or unsubstituted heterocyclic aryl, substituted or unsubstituted alkoxy, or a combination thereof, wherein adjacent Rgroups together optionally form a fused ring structure with Ar; a represents an integer of 2 or more; and b represents an integer of 1 or more, provided that a+b is at least 3 and is not greater than the total number of available aromatic carbon atoms of Ar, and two or more of Rare independently a fluorine atom or a fluoroalkyl group bonded directly to an aromatic ring carbon atom.

Photoresist pattern trimming compositions and pattern formation methods

Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the polymer comprises polymerized units of general formulas (I) and (II): wherein: X independently represents a halogen atom; Q represents a single bond, &#x2014;O&#x2014;, or &#x2014;C(O)O&#x2014;; Rindependently represents hydrogen, a halogen atom, C1-C12 alkyl or C1-C12 fluoroalkyl; Rrepresents C1-C3 alkyl or C1-C3 fluoroalkyl; and m is an integer from 0 to 4; and wherein the polymerized units of general formula (I) are present in the polymer in an amount of 10 to 90 mol % and the polymerized units of general formula (II) are present in the polymer in an amount from 10 to 60 mol %, based on total polymerized units of the polymer. The photoresist pattern trimming compositions and their use in pattern formation methods find particular applicability in the manufacture of semiconductor devices.

New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that comprise one or more base reactive groups and (i) one or more polar groups distinct from the base reactive groups, and/or (ii) at least one of the base reactive groups is a non-perfluorinated base reactive group. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Compositions comprising base-reactive component and processes for photolithography

New photoacid generator compounds ('PAGs') are provided that comprise a cholate moiety and photoresist compositions that comprise such PAG compounds.

Cholate photoacid generators and photoresists comprising same

New photoresist compositions are provided that comprise a component that comprises an amide group and multiple hydroxyl groups. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and an amide component with multiple hydroxyl groups that can function to decrease undesired photogenerated-acid diffusion out of unexposed regions of a photoresist coating layer.

Photoresists comprising amide component

Pattern-formation methods comprise: (a) providing a substrate; (b) forming a photoresist pattern over the substrate; (c) applying a pattern treatment composition to the photoresist pattern, the pattern treatment composition comprising a solvent mixture comprising a first organic solvent and a second organic solvent, wherein the first organic solvent has a boiling point that is greater than a boiling point of the second organic solvent, and wherein the first organic solvent has a boiling point of 210&#xb0; C. or more; and (d) thereafter heating the photoresist pattern. The methods find particular applicability in the manufacture of semiconductor devices.

Pattern-formation methods

New polymers are provided comprising (i) one or more covalently linked photoacid generator moieties and (ii) one or more photoacid-labile groups, wherein the one or more photoacid generator moieties are a component of one or more of the photoacid-labile groups. Preferred polymers of the invention are suitable for use in photoresists imaged at short wavelengths such as sub-200 nm, particularly 193 nm.

Polymers and photoresist compositions

Growing community of inventors

Shrewsbury, MA, United States of America

Mingqi Li