Mediatek Corporation

Other

Ming-Tzong Yang

Yu-Hua Huang

Wei-Che Huang

Tung-Hsing Lee

Cheng-Chou Hung

Tzu-Hung Lin

Tao Cheng

Ching-Chung Ko

Kuei-Ti Chan

Hsien-Hsin Lin

Ruey-Beei Wu

Wen-Kai Wan

Tien-Chang Chang

Ming-Cheng Lee

Kai-Bin Wu

Chee-Wee Liu

Chia-Che Chung

Zheng Zeng

Yu-Tung Chang

Jing-Hao Chen

A semiconductor device includes a heat dissipation substrate and a device layer. The thermal conductivity of the heat dissipation substrate is greater than 200 WmKand the device layer is disposed on the heat dissipation substrate. The device layer includes a transistor. A method of forming a semiconductor device includes providing a base substrate, forming a heat dissipation substrate on the base substrate, wherein a thermal conductivity of the heat dissipation substrate is greater than 200 WmK. The method further includes forming a device layer on the heat dissipation substrate, wherein the device layer comprises a transistor. The method further includes removing the base substrate.

Semiconductor device and method of forming the same

A package structure comprising: a substrate, having at least one conductive units provided at a first surface of the substrate; at least one first die, provided on a second surface of the substrate; a connecting layer, provided on the first die; a second die, provided on the connecting layer, wherein the connecting layer comprises at least one bump for connecting the first die; and at least one bonding wire. The connecting layer has a first touch side and a second touch side, the first touch side contacts a first surface of the first die and the second touch side contacts a second surface of the second die, an area of the first touch side is smaller than which for the first surface of the first die, and a size of the first die equals to which of the second die.

Package structure

The invention provides a semiconductor device. The semiconductor device includes a gate structure over fin structures arranged in parallel. Each of the fin structures has a drain portion and a source portion on opposite sides of the gate structure. A drain contact structure is positioned over the drain portions of the fin structures. A source contact structure is positioned over the source portions of the fin structures. A first amount of drain via structures is electrically connected to the drain contact structure. A second amount of source via structures is electrically connected to the source contact structure. The sum of the first amount and the second amount is greater than or equal to 2, and the sum of the first amount and the second amount is less than or equal to two times the amount of fin structures.

Thermal via arrangement for multi-channel semiconductor device

A semiconductor package assembly includes a first semiconductor package. The first semiconductor package has a semiconductor die having pads thereon, first vias disposed on the first semiconductor die, the first vias coupled to the pads. A second semiconductor package is stacked on the first semiconductor package and includes a body having a die-attach surface and a bump-attach surface opposite to the die-attach surface, a first memory die mounted on the bump-attach surface, coupled to the body, and a second memory die mounted on the die-attach surface, coupled to the body through the bonding wires. The number of input/output (I/O) pins of first memory die is different from the number of input/output (I/O) pins of the second memory die.

Semiconductor package assemblies with system-on-chip (SOC) packages

A semiconductor package assembly having a first semiconductor package, with a first redistribution layer (RDL) structure, a first semiconductor die having through silicon via (TSV) interconnects formed passing therethrough coupled to the first RDL structure, and a second semiconductor package stacked on the first semiconductor package with a second redistribution layer (RDL) structure. The assembly further includes a second semiconductor die without through silicon via (TSV) interconnects formed passing therethrough, coupled to the second RDL structure, and a third semiconductor package stacked on the second semiconductor package, having a third redistribution layer (RDL) structure, a third semiconductor die without through silicon via (TSV) interconnects formed passing therethrough coupled to the third RDL structure. the third semiconductor package is coupled to the second RDL structure by second vias passing through a second molding compound between the third semiconductor package and the second RDL structure.

Semiconductor package assembly

The invention provides a semiconductor package assembly with a TSV interconnect. The semiconductor package assembly includes a first semiconductor package mounted on a base, having: a semiconductor die, a semiconductor substrate, and a first array of TSV interconnects and a second array of TSV interconnects formed through the semiconductor substrate, wherein the first array and second array of TSV interconnects are separated by an interval region. The assembly further includes a second semiconductor die mounted on the first semiconductor package, having a ground pad thereon. One of the TSV interconnects of the first semiconductor package has a first terminal coupled to the ground pad of the second semiconductor die and a second terminal coupled to an interconnection structure disposed on a front side of the semiconductor substrate.

Semiconductor package assembly with through silicon via interconnect

A semiconductor package structure having a substrate, wherein the substrate has a front side and a back side, a through silicon via (TSV) interconnect structure formed in the substrate, and a first guard ring doped region and a second guard ring doped region formed in the substrate. The second guard ring doped region is disposed between the first guard ring doped region and the TSV interconnect structure.

Semiconductor package structure and method for forming the same

The invention provides a semiconductor package with a through silicon via (TSV) interconnect. An exemplary embodiment of the semiconductor package with a TSV interconnect includes a semiconductor substrate, having a front side and a back side. A contact array is disposed on the front side of the semiconductor substrate. An isolation structure is disposed in the semiconductor substrate, underlying the contact array. The TSV interconnect is formed through the semiconductor substrate, overlapping with the contact array and the isolation structure.

Semiconductor package with through silicon via interconnect

A semiconductor structure includes a semiconductor substrate and a conductive element formed in a portion of the semiconductor substrate. The semiconductor structure further includes a plurality of insulating elements formed in portions of the semiconductor substrate at a first region surrounding the conductive element and a semiconductor device formed over a portion of the semiconductor substrate at a second region adjacent to the first region. The first region is formed between the conductive element and the second region.

Semiconductor structure with through-silicon via

A method for forming a semiconductor package structure is provided. The method for forming a semiconductor package structure includes providing a substrate, wherein the substrate has a front side and a back side, forming a first guard ring doped region and a second guard ring doped region in the substrate, wherein the first guard ring doped region and the second guard ring doped region have different conductive types, forming a trench through the substrate from a back side of the substrate, conformally forming an insulating layer lining the back side of the substrate, a bottom surface and sidewalls of the trench, removing a portion of the insulating layer on the back side of the substrate to form a through via, and forming a conductive material in the through via, wherein a through silicon via (TSV) interconnect structure is formed by the insulating layer and the conductive material.

Semiconductor package structure having first and second guard ring regions of different conductivity types and method for forming the same

An implementation of the invention is directed to a passive device cell having a substrate layer, and intermediary layer formed above the substrate layer, and a passive device formed above the intermediary layer. The intermediary layer includes a plurality of LC resonators and a plurality of segmented conductive lines, wherein the plurality of segmented conductive lines are disposed between the plurality of LC resonators.

Passive device cell and fabrication process thereof

The invention provides a semiconductor package assembly. The semiconductor package assembly includes a first semiconductor package and a second semiconductor package stacked on the first semiconductor package. The first semiconductor package includes a first redistribution layer (RDL) structure. A first semiconductor die is coupled to the first RDL structure. A first molding compound surrounds the first semiconductor die, and is in contact with the RDL structure and the first semiconductor die. The second semiconductor package includes a second redistribution layer (RDL) structure. A first dynamic random access memory (DRAM) die without through silicon via (TSV) interconnects formed passing therethrough is coupled to the second RDL structure.

A semiconductor device includes a semiconductor substrate of a first conductivity type having a chip region enclosed by a seal ring region. An insulating layer is on the semiconductor substrate. A seal ring structure is embedded in the insulating layer corresponding to the seal ring region. And, a plurality of doping regions are located beneath the first seal ring structure.

Seal ring structure with capacitor

An electronic device package has a base and an electronic device chip mounted on the base. The electronic device chip includes a semiconductor substrate having a front side and a back side, a electronic component disposed on the front side of the semiconductor substrate, an interconnect structure disposed on the electronic component, a through hole formed through the semiconductor substrate from the back side of the semiconductor substrate, connecting to the interconnect structure, and a TSV structure disposed in the through hole. The interconnect structure is electrically connected to the RF component, and a thickness of the semiconductor substrate is less than that of the interconnect structure.

Growing community of inventors

Baoshan, China

Ming-Tzong Yang