Lam Research Corporation

Ming-Shu Kuo

Gowri Kamarthy

Yifeng Zhou

Siyi Li

Ganesh Upadhyaya

Qinghua Zhong

Helene Del Puppo

Tae Won Kim

Ratndeep Srivastava

Systems and methods for etching a substrate include arranging a substrate including a first structure and a dummy structure in a processing chamber. The first structure is made of a material selected from a group consisting of silicon dioxide and silicon nitride. The dummy structure is made of silicon. Carrier gas is supplied to the processing chamber. Nitrogen trifluoride and molecular hydrogen gas are supplied to the processing chamber. Plasma is generated in the processing chamber. The dummy structure is etched.

Residue free systems and methods for isotropically etching silicon in tight spaces

A method for forming via holes in an etch layer disposed below a patterned organic mask with a plurality of patterned via holes is provided. The patterned organic mask is treated by flowing a treatment gas comprising H. A plasma is formed from the treatment gas. The patterned via holes are rounded to form patterned rounded via holes by exposing the patterned via holes to the plasma. The flow of the treatment gas is stopped. The plurality of patterned rounded via holes are transferred into the etch layer.

Method for providing vias

Growing community of inventors

San Ramon, CA, United States of America

Ming-Shu Kuo