Industrial Technology Research Institute

Au Optronics Corporation

Chunghwa Picture Tubes, Ltd.

Hannstar Display Corporation

Chi Mei Optoelectronics Corporation

Toppoly Optoelectronics Corporation

Quanta Display Inc.

Taiwan Tft Lcd Association

Ming-Nan Hsiao

Hua-Chi Cheng

Cheng-Chung Lee

Chao-Jen Wang

Bor-Chuan Chuang

Chun-Yao Ou

A method of fabricating an active layer thin film by a metal-chalcogenide precursor solution is provided, including the steps of: synthesizing a metal-chalcogenide precursor containing benzyl or benzyl derivative; dissolving the precursor in a solvent to produce a precursor solution, wherein a chalcogen element or compound can be added to the precursor solution to adjust the molar ratio of metal ion to chalcogen; and then applying the precursor solution onto a substrate in a specific coating manner, to form a film of the metal-chalcogenide after a curing process. Thereby, the existing method wherein an amorphous silicon active layer film is fabricated by plasma enhanced chemical vapor deposition (PECVD) is replaced.

Method of fabricating active layer thin film by metal chalcogenide precursor solution

A method for manufacturing TFTs is provided. It can be applied to both inverted staggered and co-planar TFT structures. The manufacturing method for the staggered TFT includes the formation of a gate electrode, a gate insulator, an active channel layer, a drain electrode, and a source electrode on a substrate. It emphasizes the use of metal oxides or II-VI compound semiconductors and low-temperature CBD process to form the active channel layer. In a CBD process, the active channel layers are selectively deposited on the substrates immersed in the solution through controlling solution temperature and PH value. The invention offers the advantages of low deposition temperature, selective deposition, no practical limit of panel size, and low fabrication cost. Its low deposition temperature allows the use of flexible substrates, such as plastic substrates.

Methods for manufacturing thin film transistors that include selectively forming an active channel layer from a solution

Growing community of inventors

Taichung, Taiwan

Ming-Nan Hsiao