Promos Technologies, Inc

Mosel Vitelic Corporation

Siemens Aktiengesellschaft

Seimens Aktiengesellschaft

Ming-Li Kung

Hong-Long Chang

Chun-Wei Chen

Nien-Yu Tsai

Hungyueh Lu

Fang-Fei Liu

Nien-yu Tsai

Ming-Sheng Kao

Wei-Chih Lin

Chih-Ming Lin

A dry cleaning method for use in semiconductor fabrication, including the following steps. An etched metallization structure is provided and placed in a processing chamber. The etched metallization structure is cleaned by introducing a fluorine containing gas/oxygen containing gas mixture into the processing chamber proximate the etched metallization structure without the use of a downstream microwave while applying a magnetic field proximate the etched metallization structure and maintaining a pressure of less than about 50 millitorr within the processing chamber for a predetermined time.

Dry clean method instead of traditional wet clean after metal etch

A method of forming a metal interconnect structure and via plugs over a dielectric layer having a plurality of vias formed therein is disclosed. The method comprises the steps of: forming tungsten via plugs in the plurality of vias; depositing a metal layer over the dielectric layer and the plurality of tungsten via plugs; patterning and etching the metal layer using a photoresist layer to form the metal interconnect structure; removing the photoresist layer in an asher using a combination of oxygen plasma and water vapor, the ratio of oxygen plasma and water vapor being less than one; and performing a wet strip on the metal interconnect structure.

Method of forming tungsten interconnect and vias without tungsten loss during wet stripping of photoresist polymer

A method of forming a metal interconnect structure and via plugs over a dielectric layer having a plurality of vias formed therein is disclosed. The method comprises the steps of: forming tungsten via plugs in the plurality of vias; depositing a metal layer over the dielectric layer and the plurality of tungsten via plugs; patterning and etching the metal layer using a photoresist layer to form the metal interconnect structure; oxidizing the metal interconnect structure and the tungsten via plugs to form a metal oxide layer over the metal interconnect structure and tungsten via plugs; and performing a wet strip on the metal interconnect structure.

Method of forming tungsten interconnect with tungsten oxidation to

A method for improving etch uniformity during a wet etching process is disclosed. The method comprises the steps of first rinsing the wafer to form a water film over the wafer surface, followed by liquid phase etching. The water film helps the subsequent viscous etchant to be spread across the wafer surface more uniformly to thereby improve the etch uniformity.

Method for improving etch uniformity during a wet etching process

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Kee-Lung, Taiwan

Ming-Li Kung