Clariant Finance (bvi) Limited

Hoechst Celanese Corporation

Clariant International Ltd

Ming Kang

Iain McCulloch

Ralph R Dammel

Hyun-Nam Yoon

Dinesh N Khanna

Dana L Durham

Anthony J East

Ping-Hung Lu

Shuji Ding

Richard Keosian

Anthony J Corso

A polymer that when used with a suitable photoacid generator (PAG) forms a positive working photoresist. The polymer comprises of a tartaric polyanhydride backbone, an acetal protected 1,2 diol group; and a fused ring acetal group pendant to the backbone. The acetal protected .alpha.-hydroxy anhydride backbone structure, undergoes an efficient photoacid catalyzed cleavage, which gives rise to small molecular weight fragments which are readily dissolved in an aqueous base developer. This high contrast in solubility allows high resolution images to be produced. The fused rings offer etch resistance and can be comprised of either an adamantone or norcamphor ring structure. With the addition of a commercially available photo acid generator, the polymer formulation forms a positive working photoresist that offers high contrast and resolution.

193 nm positive-working photoresist composition

A water soluble polymer that when used with a suitable photoacid generator (PAG) forms a negative working water soluble photoresist. The polymer comprises of a backbone, such as polyvinyl ether, coupled by a linkage group to an acetal protected .beta.-keto acid group. With the addition of a number of commercially available photo acid generators, the polymer formulation forms a negative working photoresist that is water soluble. Exposure to radiation will cause a photoacid catalyzed deprotection of the acetal group, yielding a .beta.-keto acid which, upon heating, will undergo decarboxylation, which results in a water insoluble photoproduct and evolution of CO.sub.2 as a byproduct. This photochemically induced reaction results in a significant change in the polymer solubility parameter, and the product is no longer soluble in water. As this solubility change does not require crosslinking, there will be no swelling of the resist images on exposure to the aqueous base during development, and hence no loss of resolution. This enables the photoresist to be used at fine resolutions at i-line and deep UV wavelengths.

Water soluble negative-working photoresist composition

The present invention relates to a novel antireflective coating solution and a process for its use in photolithography. The antireflective coating solution comprises a novel polymer and an organic solvent or a mixture of organic solvents, where the novel polymer comprises a unit containing a dye that absorbs from about 180 nm to about 450 nm and a unit containing a crosslinking group.

Antireflective coating for photoresist compositions

The present invention relates to a novel aqueous antireflective coating solution and a process for its use in photolithography. The antireflective coating solution comprises a novel polymer and water, where the novel polymer of the antireflective coating comprises at least one unit containing a dye that absorbs from about 180 nm to about 450 nm, at least one unit containing a crosslinking group and at least one unit derived from a hydrophilic vinyl monomer or a vinyl monomer capable of becoming hydrophilic.

Aqueous antireflective coatings for photoresist compositions

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Ming Kang