Taiwan Semiconductor Manufacturing Comp. Ltd.

Ming-Hung Lin

Yu-Kai Chen

Su-Yu Yeh

Ko-Bin Kao

Li-Jen Wu

Chia-Hung Chung

Zhi-You Ke

Hsiao-Yi Wang

Yen-Min Liao

Hsin-Jung Lu

Diau-Tang Huang

A method of manufacturing a semiconductor device is as below. An exposed photoresist layer is developed using a developer supplied by a developer supplying unit. An ammonia gas by-product of the developer is discharged through a gas outlet of the developer supplying unit into a treating tool. The ammonia gas by-product is retained in the treating tool. A concentration of the ammonia gas by-product is monitored.

Manufacturing method of semiconductor device and semiconductor processing system

A method of manufacturing a semiconductor device and a semiconductor processing system are provided. The method includes the following steps. A photoresist layer is formed on a substrate in a lithography tool. The photoresist layer is exposed in the lithography tool to form an exposed photoresist layer. The exposed photoresist layer is developed to form a patterned photoresist layer in the lithography tool by using a developer. An ammonia gas by-product of the developer is removed from the lithography tool.

A method for applying developer over a semiconductor wafer is provided. The method includes moving a nozzle over the center of the semiconductor wafer. The nozzle extends across the semiconductor wafer. The method also includes rotating the semiconductor wafer by a dispensing rotation angle that is less than 180 degrees. The method further includes dispensing developer over the semiconductor wafer relative to alignment marks formed on the semiconductor wafer while the semiconductor wafer is rotated by the dispensing rotation angle.

Method for applying developer on semiconductor wafer

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Tainan, Taiwan

Ming-Hung Lin