Varian Semiconductor Equipment Associates, Inc.

Min-Sung Jeon

Bon-Woong Koo

Timothy J Miller

Svetlana Radovanov

Peter F Kurunczi

Christopher J Leavitt

Vikram M Bhosle

John A Frontiero

Yong-Tae Kim

Nicholas P T Bateman

Nicholas Pt Bateman

An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a dopant and a halogen is introduced into an ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure dopant ions than would occur if the third source gas were not used.

Boron implanting using a co-gas

A system and method for the removal of deposited material from the walls of a plasma chamber is disclosed. The system may have two modes; a normal operating mode and a cleaning mode. During the cleaning mode, the plasma is biased at a higher potential than the walls, thereby causing energetic ions from the plasma to strike the plasma wall, dislodging material previously deposited. This may be achieved through the use of one or more electrodes disposed in the plasma chamber, which are maintained at a first voltage during normal operating mode, and a second, higher voltage, during the cleaning mode.

System and method of improving implant quality in a plasma-based implant system

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Jeoniu, South Korea

Min-Sung Jeon