Semes Co., Ltd.

Min Sung Han

Yoon Jong Ju

Wan Jae Park

Dong Hun Kim

Jinkyu Kim

Boong Kim

Joo Jib Park

Dong Sub Oh

Do Yeon Kim

Seong Gil Lee

Young Je Um

Woo Young Kim

Joon Ho Won

Myoung Sub Noh

Yong Tak Hyun

Doyeon Kim

Jae Hoo Lee

Jaehoo Lee

A substrate processing apparatus using plasma capable of efficiently controlling the selectivity ratio of a silicon layer and an oxide layer is provided. The substrate processing apparatus comprises a first space disposed between an electrode and an ion blocker; a second space disposed between the ion blocker and a shower head; a processing space under the shower head for processing a substrate; a first supply hole for providing a first gas for generating plasma to the first space; a second supply hole for providing a second gas to be mixed with an effluent of the plasma to the second space; and a first coating layer formed on a first surface of the shower head facing the second space, not formed on a second surface of the shower head facing the processing space, and containing nickel.

Apparatus and method for processing substrate using plasma

Provided are a substrate processing apparatus and method for increasing the uniformity of substrate processing. The substrate processing apparatus comprises a first space disposed between an electrode and an ion blocker, a second space disposed between the ion blocker and a shower head, and a processing space for processing a substrate under the shower head, wherein the ion blocker includes a first region and a second region that are separated from each other, and includes a plurality of first supply ports for supplying a first reaction gas to the second space, wherein the plurality of first supply ports are formed in the first region and not formed in the second region, wherein the shower head includes a third region corresponding to the first region, a fourth region corresponding to the second region, and a plurality of second supply ports for supplying a second reaction gas to the second space, wherein the plurality of second supply ports are not formed in the third region, and are formed in the fourth region.

The present invention relates to a substrate processing apparatus capable of shortening a process time, and the substrate processing apparatus according to the present invention comprises an index chamber having a transfer robot loading/unloading a substrate; a process chamber having a heating means heating the substrate and processing the substrate; a loadlock chamber disposed between the index chamber and the process chamber; and a conveying chamber having a conveying robot conveying the substrate between the process chamber and the loadlock chamber, wherein a pre-heating means is provided in the conveying robot to pre-heat the substrate in a state before processing.

Substrate processing apparatus

An apparatus for processing a substrate comprises a processing vessel having a processing space inside, a substrate support unit that supports and rotates the substrate in the processing vessel, and a nozzle unit that dispenses a processing liquid onto the substrate. The nozzle unit comprises a nozzle that dispenses the processing liquid and an ultraviolet (UV) light supply unit that emits UV light to activate radicals of the processing liquid dispensed onto the substrate.

Substrate processing apparatus and nozzle unit

The present disclosure relates to a substrate processing apparatus and a substrate processing method. The substrate processing apparatus according to the exemplary embodiment of the present disclosure may include: a processing liquid supply tube; a nozzle unit which is supplied with a processing liquid from the processing liquid supply tube and discharges the processing liquid to the substrate; and a light source unit which is provided to irradiate the processing liquid discharged from the nozzle unit with ultraviolet rays. According to the present disclosure, the processing liquid, which is electrified while passing the processing liquid supply tube, is irradiated with ultraviolet rays, such that electricity is eliminated from the electrified processing liquid, and as a result, it is possible to minimize a problem that the substrate is contaminated by peripheral particles or arcing occurs on the substrate.

Substrate processing apparatus and substrate processing method

Disclosed is a substrate drying apparatus of substrate processing apparatus including a chamber that provides a space for processing a substrate, and a fluid supply unit that supplies a process fluid to the chamber, wherein the liquid supply unit includes a supply tank in which the fluid is stored, a supply line that connects the supply tank and the chamber, a branch line branched from a first point of the supply line and connected to a second point of the supply line, and a temperature control unit that adjusts the temperature of the fluid such that the temperatures of the fluids flowing through the supply line and the branch line between the first point and the second point are different.

Method and apparatus for drying substrate

Growing community of inventors

Hwaseong-si, South Korea

Min Sung Han