Epistar Corporation

Yenrich Technology Corporation

Min-Hsun Hsieh

Chih-Chiang Lu

Chien-Yuan Wang

Shih-An Liao

Hsin-Mao Liu

Ming-Chi Hsu

Chia-Liang Hsu

Wen-Huang Liu

Ta-Cheng Hsu

Tzu-Hsiang Wang

Tsung-Xian Lee

Chiu-Lin Yao

Tzer-Perng Chen

Chun-Hung Liu

Chi-Chih Pu

Shau-Yi Chen

Cheng-Nan Han

Chien-Fu Huang

Ching-San Tao

Jen-Shui Wang

Yi-Ming Chen

Wei-Chih Peng

Jai-Tai Kuo

Tzu-Feng Tseng

Tzu-Chieh Hsu

Been-Yu Liaw

Yih-Hua Renn

Yen-Wen Chen

Chia-Fen Tsai

Chou-Chih Yin

Ying-Yang Su

Schang-Jing Hon

Jen-Chau Wu

Wei-Chiang Hu

Ming-Jiunn Jou

Chao-Hsing Chen

Chien-Fu Shen

Tsun-Kai Ko

De-Shan Kuo

Chien-Kai Chung

Ching-Tai Cheng

Hsing-Chao Chen

Chih-Ming Wang

Chen Ou

Lung-Kuan Lai

Ya-Lan Yang

Ya-Ju Lee

Chia-Cheng Liu

Chao-Nien Huang

Hung-Hsuan Chen

Chih-Peng Ni

Jen-Chieh Yu

Shih-I Chen

Chien-Liang Liu

Biing-Jye Lee

Wei-Kang Cheng

Ya-Wen Lin

Jung-Min Hwang

Chun-Chang Chen

Chun-Yi Wu

Cheng-Ta Kuo

Ting-Chia Ko

Ching-Pei Lin

Jui-Hung Yeh

Yi-Wen Ku

Jui-Hsien Chang

Han-Min Wu

Jhih-Yong Yang

Tzu-Yuan Lin

Wei-Shou Chen

Shu-Ting Hsu

Wei-Yo Chen

Pei-Hsuan Lan

Yi-Jui Huang

Ru-Shi Liu

Chun-Yu Lin

Hsin-Ying Wang

Shou-Lung Chen

Chuan-Cheng Tu

Jin-Ywan Lin

Hao-Min Ku

Chih-Shu Huang

Yuh-Ren Shieh

Wei-Yu Chen

Po-Chun Liu

Yi-Chieh Lin

Wen-Luh Liao

Rong-Ren Lee

Chao Hsing Chen

Po-Shun Chiu

Chun-Hsiang Tu

Jhih-Sian Wang

Yu-Ren Peng

Yen-Chih Chen

Li-Ming Chang

Wu-Tsung Lo

Ying-Yong Su

Pai-Hsiang Wang

Yu-Jiun Shen

A light-emitting device includes a circuit carrier board having a short side and a long side, a plurality of light-emitting units on the circuit carrier board for emitting three or more color lights, and a light-transmitting glue layer on the circuit carrier board and covering the plurality of light-emitting units. The short side is shorter than the long side. The plurality of light-emitting units include a first light-emitting unit. The first light-emitting unit has a light exit surface, a first sidewall, and a second sidewall. The first sidewall faces the short side and has a first included angle with the light exit surface, and the second sidewall faces the long side and has a second included angle with the light exit surface. The first included angle is between 85 to 95 degrees, and the second included angle is less than 85 degrees or greater than 105 degrees.

Light-emitting device and display device

A method of repairing a light emitting device, comprises: providing a light emitting device comprising a carrier board and a first light emitting unit; destroying the first light emitting unit and forming a removal surface on the light emitting device; planarizing the removal surface; providing a bonding structure on the removal surface; and fixing a second light emitting unit on the planarized removal surface through the bonding material.

Method of repairing the light emitting device

The present disclosure provides a semiconductor device including a semiconductor structure, a first metal element-containing structure, and a layer. The semiconductor structure includes a first semiconductor layer having a first material, a second semiconductor layer, an active region between the first semiconductor layer and the second semiconductor layer. The first metal element-containing structure is located on the semiconductor structure and includes a first metal element. The layer has a second material and a second metal element and is located between the first semiconductor layer and the first metal element-containing structure. The first material has a conduction band edge Ec and a valence band edge Ev, and the second material has a work function WF, when the first semiconductor layer is of an n-type conductivity, the work function WFfulfills WF<(Ec+Ev)/2, and when the first semiconductor layer is of a p-type conductivity, the work function WFfulfills WF>(Ec+Ev)/2.

Semiconductor device, semiconductor component and display panel including the same

The present disclosure provides a light-emitting module and a display apparatus thereof. The light-emitting module includes a circuit substrate which includes a first surface and a second surface opposite to the first surface. The first surface includes a plurality of conductive channels, and the second surface includes a plurality of conductive pads. A plurality of light-emitting groups is arranged in a matrix on the first surface. Each of the light-emitting groups includes a red light-emitting diode chip, a green light-emitting diode chip, and a blue light-emitting diode chip. An electric component is disposed on the first surface and located in the light-emitting groups matrix. A translucent encapsulating component covers the plurality of light-emitting groups and the electric component. The light-emitting groups matrix comprises m columns and n rows.

Light-emitting module and display apparatus

This disclosure discloses a method of manufacturing a light-emitting device includes steps of providing a first substrate with a plurality of first light-emitting elements and adhesive units arranged thereon, providing a second substrate with a first group of second light-emitting elements and a second group of second light-emitting elements arranged thereon, and connecting the a second group of second light-emitting elements and the adhesive units. The first light-emitting elements and the first group of second light-emitting elements are partially or wholly overlapped with each other during connecting the second group of second light-emitting elements and the adhesive units.

Light-emitting device and manufacturing method thereof

A light-emitting device includes a carrier, a light-emitting unit disposed on the carrier, a reflective element arranged on the light-emitting unit, and an optical element arranged on the carrier and surrounding the light-emitting unit.

Light-emitting device

A light-emitting device includes a light-emitting element having a first-type semiconductor layer, a second-type semiconductor layer, an active stack between the first-type semiconductor layer and the second-type semiconductor layer, a bottom surface, and a top surface. A first electrode is disposed on the bottom surface and electrically connected to the first-type semiconductor layer. A second electrode is disposed on the bottom surface and electrically connected to the second-type semiconductor layer. A supporting structure is disposed on the top surface. The supporting structure has a thickness and a maximum width. A ratio of the maximum width to the thickness is of 2-150.

Light-emitting device, manufacturing method thereof and display module using the same

The present application discloses a light-emitting device comprises a semiconductor light-emitting element, a transparent element covering the semiconductor light-emitting element, an insulating layer which connects to the transparent element, an intermediate layer which connects to the insulating layer; and a conductive adhesive material connecting to the intermediate layer.

Light-emitting device and the method of manufacturing the same

An embodiment of present invention discloses a light-emitting device which includes a first light-emitting area, a second light-emitting area, and a third light-emitting area. The first light-emitting area emits a red light and includes a first light-emitting unit. The second light-emitting area emits a blue light and includes a second light-emitting unit. The third light-emitting area emits a green light and includes a third light-emitting unit. The first light-emitting area is larger than the second light-emitting area and larger than the third light-emitting area. Each of the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit has a width of less than 100 μm and a length of less than 100 μm.

Disclosed is a die-bonding method which provides a target substrate having a circuit structure with multiple electrical contacts and multiple semiconductor elements each semiconductor element having a pair of electrodes, arranges the multiple semiconductor elements on the target substrate with the pair of electrodes of each semiconductor element aligned with two corresponding electrical contacts of the target substrate, and applies at least one energy beam to join and electrically connect the at least one pair of electrodes of every at least one of the multiple semiconductor elements and the corresponding electrical contacts aligned therewith in a heating cycle by heat carried by the at least one energy beam in the heating cycle. The die-bonding method delivers scattering heated dots over the target substrate to avoid warpage of PCB and ensures high bonding strength between the semiconductor elements and the circuit structure of the target substrate.

Method and structure for die bonding using energy beam

A semiconductor device comprises a semiconductor die, comprising a stacking structure, a first bonding pad with a first bonding surface positioned away from the stack structure, and a second bonding pad; a carrier comprising a connecting surface; a third bonding pad which comprises a second bonding surface and is arranged on the connecting surface, and a fourth bonding pad arranged on the connecting surface of the carrier; and a conductive connecting layer comprising a first conductive part, comprising a first outer contour, and formed between and directly contacting the first bonding pad and the third bonding pad; a second conductive part formed between the second bonding pad and the fourth bonding pad; and a blocking part covering the first conductive part to form a covering area, wherein the first bonding surface comprises a first position which is the closest to the carrier within the covering area and a second position which is the farthest from the carrier within the covering area in a cross section view, and a distance from the first position to the first out contour is greater than that from the second position to the first outer contour.

Semiconductor device and a method of manufacturing thereof

The application discloses a light-emitting device including a carrier which includes an insulating layer, an upper conductive layer formed on the insulating layer, a plurality of conducting vias passing through the insulating layer, and a lower conductive layer formed under the insulating layer; four light-emitting elements arranged in rows and columns flipped on the carrier; and a light-passing unit formed on the carrier and covering the four light-emitting elements; wherein each of the light-emitting elements including a first light-emitting bare die emitting a first dominant wavelength, a second light-emitting bare die emitting a second dominant wavelength, and a third light-emitting bare die emitting a third dominant wavelength; and wherein two adjacent first light-emitting bare die in a row has a first distance W, two adjacent first light-emitting bare die in a column has a second distance W, and Wis the same as W

A light-emitting device includes a carrier, a light-emitting element and a connection structure. The carrier includes a first electrical conduction portion. The light-emitting element includes a first light-emitting layer capable of emitting first light and a first contact electrode formed under the light-emitting layer. The first contact electrode is corresponded to the first electrical conduction portion. The connection structure includes a first electrical connection portion and a protective portion surrounding the first contact electrode and the first electrical connection portion. The first electrical connection portion includes an upper portion, a lower portion and a neck portion arranged between the upper portion and the lower portion. An edge of the upper portion is protruded beyond the neck portion, and an edge of the lower portion is protruded beyond the upper portion.

A light-emitting device includes a semiconductor stack, a first electrode, a second electrode, and a supporting layer. The semiconductor stack includes a first semiconductor layer including a first top surface and a bottom surface, an active layer located on the first semiconductor layer, and a second semiconductor layer located on the active layer and including a second top surface. The first electrode is located on the first top surface. The second electrode is located on the second top surface. The supporting layer includes a first thickness, and directly covers at least 80% of the bottom surface. In a top view, the semiconductor stack includes a maximum length, and a ratio of the maximum length to the first thickness is smaller than 1. The supporting layer has a first thermal expansion coefficient smaller than 80 ppm/° C., and the supporting layer has a Young's modulus between 2˜10 GPa.

A package comprises a substrate including a first surface, and an upper conductive layer arranged on the first surface, a first light-emitting unit arranged on the upper conductive layer, and comprises a first semiconductor layer, a first substrate, a first light-emitting surface and a first side wall, a second light-emitting unit, which is arranged on the upper conductive layer, and comprises a second light-emitting surface and a second side wall, a light-transmitting layer arranged on the first surface and covers the upper conductive layer, the first light-emitting unit, and the second light-emitting unit, a light-absorbing layer, which is arranged between the substrate and the light-transmitting layer in a continuous configuration of separating the first light-emitting unit and the second light-emitting unit from each other, and a reflective wall arranged on the first side wall, wherein a height of the reflective wall is lower than that of the light-absorbing layer.

Package and display module

Growing community of inventors

Hsinchu, Taiwan

Min-Hsun Hsieh