Taiwan Semiconductor Manufacturing Comp. Ltd.

Min-Chiang Chuang

Shuen-Shin Liang

Yi-Bo Liao

Wei-Yen Woon

Szuya Liao

Jhih-Rong Huang

Kuan-Kan Hu

Sung-li Wang

A method for manufacturing a semiconductor device is provided. The method includes forming a first transistor over a substrate, wherein the first transistor comprises a first source/drain feature; depositing an interlayer dielectric layer around the first transistor; etching an opening in the interlayer dielectric layer to expose the first source/drain feature; conformably depositing a semimetal layer over the interlayer dielectric layer, wherein the semimetal layer has a first portion in the opening in the interlayer dielectric layer and a second portion over a top surface of the interlayer dielectric layer; and forming a source/drain contact in the opening in the interlayer dielectric layer.

Semiconductor device and manufacturing method thereof

Growing community of inventors

Taoyuan, Taiwan

Min-Chiang Chuang