Advanced Micro Devices Corporation

Apple Inc.

Memc Electronic Materials, Inc.

Broadcom Corporation

Analog Devices,inc.

Ati Technologies Ulc

Advances Micro Devices, Inc.

Milind S Bhagavat

Rahul Kumar Agarwal

Brett P Wilkerson

Lei Fu

Priyal Shah

Chia-Hao Cheng

Samuel D Naffziger

John J Wuu

Roland R Vandamme

Patrick J Shyvers

Kaushik Mysore

Colin M Ely

Jun Zhai

Maegan K Spencer

Serhan O Isikman

Prashanth S Holenarsipur

Richard A Ruh

Ivor G Barber

David Glen Havskjold

Dmitri Yudanov

Anant Rai

Jairam Manjunathaiah

Paisith P Boonsom

William N Pickeral

Gabriel H Loh

Rezaur Rahman Khan

Henry Hung Yang

Skyler Jonathon Saleh

Puneet Gupta

Farshad Ghahghahi

Richard Yeh

Andrew William Sparks

Rahul Agarwal

Takuto Kazama

Venkatachalam Valliappan

Yuen Ting Cheng

Guan Sin Chok

Noriyuki Tachi

Erik Tarvin

Sam Ziqun Zhao

Dale R Setlak

Kuang L Yang

Sumeet S Bhagavat

Ruijin Wu

Chih-Wei Chen

Firas Sammoura

Kwan-Yu Lai

Patrick E O'Brien

Fei Guo

David Hugh McIntyre

Yun-Biao Xin

David D Coons

Sampath Komarapalayam Velayudham Karikalan

Chia-Ken Leong

Gary L Anderson

Tomomi Komura

Kaushik Mysore Srinivasa Setty

Brent F Teasley

Teck Yang Tan

Seyed Mahdi Saeidi

Javed Iqbal Sandhu

Tak Sang Yeung

Xue'en Yang

Ronald D Vandamme

Roland S Vandamme

Various molded semiconductor chip packages are disclosed. In one aspect, a semiconductor chip package includes a routing substrate and a semiconductor chip mounted on and electrically connected to the routing substrate. The semiconductor chip has plural side surfaces. A molding layer at least partially encases the semiconductor chip. The molding layer has a tread and a riser, the riser abutting at least some of the side surfaces.

Molded semiconductor chip package with stair-step molding layer

Various semiconductor chip devices with stacked chips are disclosed. In one aspect, a semiconductor chip device is provided. The semiconductor chip device includes a first semiconductor chip that has a floor plan with a high heat producing area and a low heat producing area. At least one second semiconductor chip is stacked on the low heat producing area. The semiconductor chip device also includes means for transferring heat from the high heat producing area.

Arrangement and thermal management of 3D stacked dies

Various semiconductor chip packages are disclosed. In one aspect, a semiconductor chip package includes a package substrate that has a first side and a second side opposite to the first side. A semiconductor chip is mounted on the first side. Plural metal anchor structures are coupled to the package substrate and project away from the first side. A molding layer is on the package substrate and at least partially encapsulates the semiconductor chip and the anchor structures. The anchor structures terminate in the molding layer and anchor the molding layer to the package substrate.

Molded chip package with anchor structures

Various molded fan-out semiconductor chip devices are disclosed. In one aspect, a semiconductor chip device is provided that includes a first molding layer that has internal conductor structures, a redistribution layer (RDL) structure positioned on the first molding layer and electrically connected to the internal conductor structures, a semiconductor chip positioned on and electrically connected to the RDL structure, and a second molding layer positioned on the RDL structure and at least partially encapsulating the semiconductor chip.

Fan-out packages with warpage resistance

Various multi-die arrangements and methods of manufacturing the same are disclosed. In some embodiments, a method of manufacture includes a face-to-face process in which a first GPU chiplet and a second GPU chiplet are bonded to a temporary carrier wafer. A face surface of an active bridge chiplet is bonded to a face surface of the first and second GPU chiplets before mounting the GPU chiplets to a carrier substrate. In other embodiments, a method of manufacture includes a face-to-back process in which a face surface of an active bridge chiplet is bonded to a back surface of the first and second GPU chiplets.

Fabricating active-bridge-coupled GPU chiplets

A three-dimensional integrated circuit includes a first die structure having a first geometry. The first die structure includes a first region that operates with a first power density and a second region that operates with a second power density. The first power density is less than the second power density. The three-dimensional integrated circuit includes a second die structure having a second geometry. A stacked portion of the second die structure is aligned with the first region. The three-dimensional integrated circuit includes an additional die structure stacked with the first die structure and the second die structure. The additional die structure has the first geometry or the second geometry.

Offset-aligned three-dimensional integrated circuit

A chiplet system includes a central processing unit (CPU) communicably coupled to a first GPU chiplet of a GPU chiplet array. The GPU chiplet array includes the first GPU chiplet communicably coupled to the CPU via a bus and a second GPU chiplet communicably coupled to the first GPU chiplet via a passive crosslink. The passive crosslink is a passive interposer die dedicated for inter-chiplet communications and partitions systems-on-a-chip (SoC) functionality into smaller functional chiplet groupings.

GPU chiplets using high bandwidth crosslinks

Various circuit boards with mounted passive components and method of making the same are disclosed. In one aspect, a method of manufacturing is provided that includes at least partially encapsulating a first plurality of passive components in a molding material to create a first molded passive component group. The first molded passive component group is mounted on a surface of a circuit board. The first plurality of passive components are electrically connected to the circuit board.

Circuit board with compact passive component arrangement

Various chip stacks and methods and structures of interconnecting the same are disclosed. In one aspect, an apparatus is provided that includes a first semiconductor chip that has a first glass layer and plural first groups of plural conductor pads in the first glass layer. Each of the plural first groups of conductor pads is configured to bumplessly connect to a corresponding second group of plural conductor pads of a second semiconductor chip to make up a first interconnect of a plurality interconnects that connect the first semiconductor chip to the second semiconductor chip. The first glass layer is configured to bond to a second glass layer of the second semiconductor chip.

Bond pads for low temperature hybrid bonding

Systems, apparatuses, and methods for routing traffic through vertically stacked semiconductor dies are disclosed. A first semiconductor die has a second die stacked vertically on top of it in a three-dimensional integrated circuit. The first die includes a through silicon via (TSV) interconnect that does not traverse the first die. The first die includes one or more metal layers above the TSV, which connect to a bonding pad interface through a bonding pad via. If the signals transferred through the TSV of the first die are shared by the second die, then the second die includes a TSV aligned with the bonding pad interface of the first die. If these signals are not shared by the second die, then the second die includes an insulated portion of a wafer backside aligned with the bonding pad interface.

Scheme for enabling die reuse in 3D stacked products

Various semiconductor chip packages are disclosed. In one aspect, a semiconductor chip package is provided that includes a fan-out redistribution layer (RDL) structure that has plural stacked polymer layers, plural metallization layers, plural conductive vias interconnecting adjacent metallization layers of the metallization layers, and plural rivets configured to resist delamination of one or more of the polymer layers. Each of the plural rivets includes a first head, a second head and a shank connected between the first head and the second head. The first head is part of one of the metallization layers. The shank includes at least one of the conductive vias and at least one part of another of the metallization layers.

Fan-out package with reinforcing rivets

Various semiconductor chip devices and methods of making the same are disclosed. In one aspect, an apparatus is provided that includes a first redistribution layer (RDL) structure having a first plurality of conductor traces, a first molding layer on the first RDL structure, plural conductive pillars in the first molding layer, each of the conductive pillars including a first end and a second end, a second RDL structure on the first molding layer, the second RDL structure having a second plurality of conductor traces, and wherein some of the conductive pillars are electrically connected between some of the first plurality of conductor traces and some of the second plurality of conductor traces to provide a first inductor coil.

Integrated circuit package with integrated voltage regulator

Various semiconductor chips and packages are disclosed. In one aspect, an apparatus is provided that includes a semiconductor chip that has a side, and plural conductive pillars on the side. Each of the conductive pillars includes a pillar portion that has an exposed shoulder facing away from the semiconductor chip. The shoulder provides a wetting surface to attract melted solder. The pillar portion has a first lateral dimension at the shoulder. A solder cap is positioned on the pillar portion. The solder cap has a second lateral dimension smaller than the first lateral dimension.

Semiconductor chip with reduced pitch conductive pillars

An integrated circuit product includes a redistribution layer, an integrated circuit die disposed above the redistribution layer, a row of discrete devices disposed laterally with respect to the integrated circuit die, and encapsulant mechanically coupling the redistribution layer, integrated circuit die, and the row of discrete devices. In at least one embodiment, the row of discrete devices is a row of decoupling capacitors disposed proximate to the integrated circuit die and coupled to the integrated circuit die and a power distribution network. In at least one embodiment, a second integrated circuit die is disposed above the redistribution layer and disposed laterally with respect to the integrated circuit die and the row of discrete devices. The second integrated circuit die is mechanically coupled to the redistribution layer, integrated circuit die, and the row of discrete devices and is partially surrounded by the row of discrete devices.

Integrated circuit module with integrated discrete devices

A chip for hybrid bridged fanout chiplet connectivity, the chip comprising: a central chiplet; one or more first chiplets each coupled to the central chiplet using a plurality of fanout traces; and one or more second chiplets each coupled to the central chiplet using one or more interconnect dies (ICDs).

Hybrid bridged fanout chiplet connectivity

Growing community of inventors

Los Altos, CA, United States of America

Milind S Bhagavat