Nikon Corporation

Mikio Ushijima

Kazuaki Suzuki

Hiroshi Shirasu

Isao Sugaya

Minoru Fukuda

Hajime Mitsuishi

Yoshiaki Kito

Masaki Tsunoda

Eiji Ariizumi

Masanori Aramata

Naoto Kiribe

To improve the throughput of substrate bonding. A substrate bonding apparatus that bonds first and second substrates so that contact regions in which the first and second substrates contact are formed in parts of the first and second substrates and the contact regions enlarge from the parts, the apparatus including: a detecting unit detecting information about the contact regions; and a determining unit determining that the first and second substrates can be carried out based on the information detected at the detecting unit. In the substrate bonding apparatus, the information may be information, a value of which changes according to progress of enlargement of the contact regions, and the determining unit may determine that the first and second substrates can be carried out if the value becomes constant or if a rate of changes in the value becomes lower than a predetermined value.

Substrate bonding apparatus and substrate bonding method

Due to its lack of appreciable thickness, the reticle used in charged-particle-beam (CPB) microlithography is prone to bending and flexing, causing instability in reticle axial height position relative to the projection-lens system, with consequent errors in image focus, rotation and magnification. Apparatus and methods are disclosed for monitoring changes in axial height position of the reticle, to facilitate making compensatory changes. Representative apparatus include a device for detecting the axial height position of the reticle. The device produces one or more beams of light (IR to visible) to strike the reticle at an oblique angle of incidence, detects light reflected from the reticle surface, and detects lateral shifts of the reflected light as received by a height detector. Hence, reticle focus is detected easily and in real time. Multiple detection beams can be used, thereby allowing detection of both axial height position and inclination of the reticle with high accuracy. Reticle-position data can be used to regulate one or more parameters of exposure and/or axial position of the reticle or wafer.

Reticle-focus detector, and charged-particle-beam microlithography apparatus and methods comprising same

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Kumagaya, Japan

Mikio Ushijima