F.t.l. Co., Ltd.

Other

Ulvac, Inc.

Nippon Oil Fats Co., Ltd.

F.t.i. Co., Ltd.

Mikio Takagi

Yoshishige Murata

Takayuki Otsu

Seiichi Takahashi

Naoyuki Amaya

Hiroaki Inoue

Yutaka Miura

Akira Yamada

Kiyotaka Shigehara

Masayuki Satou

Kazuichi Tsuda

Norihiro Kaiya

Native oxide film on a semiconductor silicon wafer(s) is dry etched at a temperature of 50&#xb0; C. or less. Hydrogen treatment is then carried out a temperature of 100&#xb0; C. or more to bond the dangling bonds with hydrogen. A jigthat has been used is again used for loading new semiconductor silicon wafer(s). The wafer(s) on the jigis subjected to removal of a native oxide film and then hydrogen bonding. The resultant heat remains in jig and makes it difficult to maintain the wafers to temperature appropriate to removal of a native oxide film. After treatment of hydrogen bonding, inert gas having temperature of from 0 to &#x2212;30&#xb0; C. is injected into reaction vesseland/or treatment preparing vessel, in which a native oxide film has been removed.

Method for surface treating semiconductor

A method of removing native oxide film from contact holes of a semiconductor device by using a microwave-excited reactive gas. The method increases throughput. Reactive gas is introduced substantially horizontally into the reactor () by way of a chamber () arranged as an extension thereof in the vertical direction of the reactor () and showing an internal pressure higher than that of the reactor, while the plurality of semiconductor silicon wafers () that are arranged in the vertical direction and held to temperature not higher than 323 K are being rotated, and subsequently said reactor is heated () to above 373 K.

Method of surface treatment of semiconductor

An assembly of heating furnace and semiconductor wafer-holding jig. This assembly includes a furnace body made of refractory or heat insulting material; a heater disposed around the inner side surface of the furnace body; a reaction chamber which forms a uniform heating zone; and a wafer-holding jig. The wafer-holding jig is capable of holding the wafer and advancing and retracting the wafer in the uniform heating region along the longitudinal direction of the furnace body. The front surface of the semiconductor wafer to be heat-treated is substantially in parallel with the surface of the heater. The assembly of the invention can be used in rapid thermal processing and the footprint of the heating furnace can be reduced.

Heating furnace and semiconductor wafer-holding jig assembly and process of manufacturing semiconductor devices

In a method for producing a semiconductor device using a dual tube reactor, inert gas is fed into the vertical reaction-tube, a reaction gas is introduced into the vertical reaction-tube, the inert gas is exhausted through the annular channel formed between the inner tube and the outer tube at a bottom portion of the vertical reaction-tube; and, a wafer is heat treated in the vertical reaction-tube by means of a heating furnace. In order to decrease the number and size of the particles, the wafer is displaced upward and then positioned at a level substantially the same as or above the top end of the inner tube, and the reaction gas is introduced into the vertical reaction-tube at or above the position of the wafer. Furthermore, the inert gas is caused to flow from a bottom portion of the inner tube toward the wafer positioned as above. As a result, inflow of the reaction gas into the inner tube is impeded, and the generation of particles there can be lessened.

Method of producing a semiconductor device in a heating furnace having a reaction tube with a temperature-equalizing zone

The film growth speed of a conventional vertical heating method, such as SiO,film, polycrystalline Si film or the like of a semiconductor device, is enhanced by means of discharging and sucking the reaction gas onto and from the Si wafers placed horizontally in the vertical furnace. The wafers are rotated and the wafer-distance is set at 5 mm or more.

Method and apparatus for producing a semiconductor device

In a RTP (rapid Thermal Processing) of a large-diameter semiconductor wafer using a hot-wall type heating furnace, the temperature distribution of the wafer surface is made uniform by means of preliminarily heating a thermal storage plate(s) to a heat-treating temperature, and, then positioning the wafer between a pair of the thermal storage plates or in the direct proximity of a thermal storage plate. The wafer may be brought into contact with the thermal storage plate. The wafer is thus heated rapidly heated to the heat treating temperature.

Method for producing semiconductor device and production apparatus of

In a rapid thermal processing (RTP) of a large-diameter wafer, a wafer is heat treated by an upper high-temperature furnace and a lower low-temperature furnace, which are separated from and can be brought into close contact with one another by a relative vertical position adjusting means. The upper high-temperature furnace has an open bottom which is shut by an openable, heat insulating shutter. Height of the apparatus as a whole can be shortened.

Method for producing semiconductor device

A wafer(s) for producing semiconductor devices is subjected to heat treatment in a vertical thermal reactor, which is provided with an electric heating means setting a first temperature and another electric heating means setting a second temperature higher than the first temperature. The wafer(s) is moved upwards and is subjected to a treatment in the second region of the vertical thermal reactor; and, is reverted to the first region. Rapid thermal processing of 6 or 8 inch wafer(s) is possible without causing slip lines.

Method and apparatus for manufacturing semiconductor devices

Apparatus for producing semiconductor device and method for producing

A wafer(s) for producing semiconductor devices is subjected to heat treatment in a vertical thermal reactor, which is provided with an electric heating means setting a first temperature and another electric heating means setting a second temperature higher than the first temperature. The wafer(s) is moved upwards and is subected to a treatment in the second region of the vertical thermal reactor; and, is reverted to the first region. Rapid thermal processing of 6 or 8 inch wafer(s) is possbile without causing slip lines.

Method for manufacturing semiconductor devices using heat-treatment

An ultrathin polymeric membrane has a membrane thickness of 10 to 1,000 .ANG.. The membrane is constituted of polycarboxylate and obtained by the spin coating method or by the Langmuir-Blodgett method. The polycarboxylate contains recurrent units represented by the formula (I) ##STR1## wherein R.sub.1 and R.sub.2 represent different groups and each stands for a methyl group or a hydrogen atom, and R represents a hydrocarbon group selected from the group consisting of a branched alkyl group having 3 to 12 carbon atoms, a cycloalkyl group having 3 to 12 carbon atoms, a substituted alkyl group having 2 to 6 carbon atoms, a substituted cycloalkyl group having 3 to 10 carbon atoms and a siloxanic hydrocarbon group.

Growing community of inventors

Kanagawa, Japan

Mikio Takagi