Imec Vzw

Katholieke Universiteit Leuven, Ku Leuven R&d

St. Petersburg Electrotechnical University

Mikhail Krishtab

Mikhail Rodionovich Baklanov

Silvia Armini

Rob Ameloot

Ivo Stassen

Victor Luchinin

Svetlana Goloudina

Vyacheslav Pasyuta

Alexey Ivanov

In a first aspect, the present disclosure relates to a method for forming a patterning mask over a layer to be patterned, the method comprising: (a) providing a first layer over a substrate, the substrate comprising the layer to be patterned, the first layer being capable to bond with a monolayer comprising a compound comprising a functional group for bonding to the first layer and a removable organic group, (b) bonding the monolayer to the first layer, (c) exposing the monolayer to an energy beam, thereby forming a pattern comprising a first area comprising the compound with the removable organic group and a second area comprising the compound not having the removable organic group, and (d) selectively depositing an amorphous carbon layer on top of the first area.

Resistless patterning mask

Example embodiments relate to selective deposition of metal-organic frameworks. One embodiment includes a method of forming a low-k dielectric film selectively on exposed dielectric locations in a substrate. The method includes selectively depositing a metal-containing film, using an area-selective deposition process, on the exposed dielectric locations using one or more deposition cycles. The method also includes providing, at least once, a vapor of at least one organic ligand to the deposited metal-containing film resulting in a gas-phase chemical reaction thereby obtaining a metal-organic framework which is the low-k dielectric film. The low-k dielectric film has gaps on locations where no metal-containing film was deposited.

Selective deposition of metal-organic frameworks

Growing community of inventors

Heverlee, Belgium

Mikhail Krishtab