Kla Tencor Corporation

Mikhail Haurylau

Robert M Danen

Pavel Kolchin

Gary Janik

David W Shortt

Jamie Michael Sullivan

Grace Hsiu-Ling Chen

Grace H Chen

Qiang Q Zhang

Wenjian Cai

Rex Runyon

Steve Yifeng Cui

Dieter Wilk

Meier Yitzhak Brender

Junwei Wei

Stefano Palomba

Steve Short

Suwipin Martono

Shobhit Verma

Dan Kapp

Systems and methods for determining information for defects on a wafer are provided. One system includes an illumination subsystem configured to direct light having one or more illumination wavelengths to a wafer. The one or more illumination wavelengths are selected to cause fluorescence from one or more materials on the wafer without causing fluorescence from one or more other materials on the wafer. The system also includes a detection subsystem configured to detect only the fluorescence from the one or more materials or to detect non-fluorescent light from the wafer without detecting the fluorescence from the one or more materials. In addition, the system includes a computer subsystem configured to determine information for defects on the wafer using output generated by the detection subsystem responsive to the detected fluorescence or the detected non-fluorescent light.

Determining information for defects on wafers

Methods and systems for determining a configuration for an optical element positioned in a collection aperture during wafer inspection are provided. One system includes a detector configured to detect light from a wafer that passes through an optical element, which includes a set of collection apertures, when the optical element has different configurations thereby generating different images for the different configurations. The system also includes a computer subsystem configured for constructing additional image(s) from two or more of the different images, and the two or more different images used to generate any one of the additional image(s) do not include only different images generated for single collection apertures in the set. The computer subsystem is further configured for selecting one of the different or additional configurations for the optical element based on the different images and the additional image(s).

Determining a configuration for an optical element positioned in a collection aperture during wafer inspection

A computer-based apparatus for adjusting an auto-focus in a wafer inspection system, including: a wafer adjustment system; and an electronic feedback loop system configured to compare an intensity of a first light beam rotating in a first spiral about a first central axis, and when the intensity is less than a preselected threshold, adjust, using the wafer adjustment system, a position of the wafer until the intensity reaches the preselected threshold.

System and method to determine depth for optical wafer inspection

An inspection system with selectable apodization includes a selectably configurable apodization device disposed along an optical pathway of an optical system. The apodization device includes one or more apodization elements operatively coupled to one or more actuation stages. The one or more actuation stages are configured to selectably actuate the one or more apodization elements along one or more directions. The inspection system includes a control system communicatively coupled to the one or more actuation stages. The control system is configured to selectably control an actuation state of at the one or more apodization elements so as to apply a selected apodization profile formed with the one or more apodization elements.

System and method for apodization in a semiconductor device inspection system

A computer-based method for inspecting a wafer, including: storing, in a memory element for at least one computer, computer readable instructions; detecting a first light beam rotating in a first spiral about a first central axis; and executing, using a processor for the at least one computer, the computer readable instructions to generate, using the detected first light beam, an image including at least one shape, determine an orientation of the at least one shape or a size of the at least one shape, and calculate a depth of a defect in the wafer according to the orientation or the size.

An inspection system with selectable apodization includes an illumination source configured to illuminate a surface of a sample, a detector configured to detect at least a portion of light emanating from the surface of the sample, the illumination source and the detector being optically coupled via an optical pathway of an optical system, a selectably configurable apodization device disposed along the optical pathway, wherein the apodization device includes one or more apodization elements operatively coupled to one or more actuation stages configured to selectably actuate the one or more apodization elements along one or more directions, and a control system communicatively coupled to the one or more actuation and configured to selectably control apodization of illumination transmitted along the optical pathway by controlling an actuation state of the one or more apodization elements.

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San Jose, CA, United States of America

Mikhail Haurylau