Teknologian Tutkimuskeskus Vtt Oy

University of Warwick

Teknologian Tutkimuskeskus Vtt

Vtt Technical Research Centre of Finland Ltd

Mika Prunnila

Tuomas Pensala

Antti Jaakkola

Panu Pekko

Aapo Varpula

Jouni Ahopelto

Antti Kemppinen

Kestutis Grigoras

Jyrki Kiihamäki

Kirsi Tappura

Andrey Timofeev

Leif Grönberg

Andrey Shchepetov

Maria Ganchenkova

Emma Mykkänen

Alberto Ronzani

Grigoras Kestutis

Janne Lehtinen

David Gunnarsson

Evan Parker

Martin Prest

Terence Whall

Leif GRÖNBERG

Jyrki KIIHAMÄKI

A device for shielding at least one component from thermal radiation, the device comprising at least a first substrate with a first surface and a second surface and a second substrate with a first surface and second surface, the first surface of the second substrate being arranged to at least partially face the second surface of the first substrate. The device additionally comprises at least a first component arranged on the first surface of the second substrate or the second surface of the first substrate and a shielding arrangement comprising a plurality of shielding elements-comprising electrically conductive material, the shielding elements being configured to essentially surround at least the first component to provide a shielded area within which the first component is located, wherein electromagnetic radiation having wavelength longer than a selected first wavelength is essentially prevented from reaching the shielded area.

Device for shielding at least one quantum component

An inventive embodiment comprises a thermalization arrangement at cryogenic temperatures. The arrangement comprises a dielectric substrate () layer on which substrate a device/s or component/s () are positionable. A heat sink component () is attached on another side of the substrate. The arrangement further comprises a conductive layer () between the substrate layer () and the heat sink component (). A joint between the substrate layer () and the conductive layer () has minimal thermal boundary resistance. Another joint between the conductive layer () and the cooling heat sink layer () is electrically conductive.

Thermalization arrangement at cryogenic temperatures

An absorber structure for a thermal detector, the absorber structure including edges defining a basic form, a plurality of first legs of electrically conducting material joined in an electrically conductive manner to form, between the edges of the absorber structure, a grid having openings, the first legs forming at least one continuous connection between the edges of the absorber structure; and a plurality of second legs of electrically conducting material joined in an electrically conductive manner to the first legs, wherein the second legs protrude from the first legs into the openings of the grid and terminate at points of termination located at a distance from adjacent first legs.

Absorber structure for thermal detectors

A thermoelectric device () comprising a frame (), a membrane () made of thermoelectric material, and an element () for absorbing or releasing energy. The element () is supported to the frame () solely by the membrane ().

Thermoelectric device

A method for producing a mirror plate for a Fabry-Perot interferometer includes

Mirror plate for a fabry-perot interferometer and a fabry-perot interferometer

A blank suitable for use as a body of a supercapacitor comprises a first porous semiconductor volume and a second porous semiconductor volume, the second porous semiconductor volume laterally surrounded by the first porous semiconductor volume and separated from it by a trench that is suitable for receiving an electrolyte, whereby the first and second porous semiconductor volume comprise channels opening to the trench. A supercapacitor comprises a body formed by using the blank according to any one of the preceding claims, so that the first porous semiconductor volume acts as one electrode and the second porous semiconductor volume acts as another electrode, with an electrolyte in the trench.

Blank suitable for use as a body of a supercapacitor, a supercapacitor, and a method of manufacturing a porous silicon volume

The invention provides a microelectromechanical resonator device comprising a support structure and a resonator manufactured on a (100) or (110) semiconductor wafer, wherein the resonator is suspended to the support structure and comprises at least one beam being doped to a doping concentration of 1.1*10cmor more with an n-type doping agent and is being capable of resonating in a length-extensional, flexural resonance or torsional mode upon suitable actuation. In particular, the doping concentration and angle of the beam are chosen so as to simultaneously produce zero or close to zero second order TCF, and even more preferably zero or close to zero first and second order TCFs, for the resonator in said resonance mode, thus providing a temperature stable resonator.

Temperature compensated beam resonator

The invention concerns microelectromechanical resonators. In particular, the invention provides a resonator comprising a support structure, a doped semiconductor resonator suspended to the support structure by at least one anchor, and actuator for exciting resonance into the resonator. According to the invention, the resonator comprises a base portion and at least one protrusion extending outward from the base portion and is excitable by said actuator into a compound resonance mode having temperature coefficient of frequency (TCF) characteristics, which are contributed by both the base portion and the at least one protrusion. The invention enables simple resonators, which are very well temperature compensated over a wide temperature range.

Temperature compensated compound resonator

A bolometer is described. A bolometer includes a superconductor-insulator-semiconductor-superconductor structure or a superconductor-insulator-semiconductor-insulator-superconductor structure. The semiconductor comprises an electron gas in a layer of silicon, germanium or silicon-germanium alloy in which valley degeneracy is at least partially lifted. The insulator or a one or both of the insulators may comprise a layer of dielectric material. The insulator or a one or both of the insulators may comprise a layer of non-degenerately doped semiconductor.

Bolometer

The invention relates to a microelectromechanical resonator device comprising a support structure and a semiconductor resonator plate doped to a doping concentration with an n-type doping agent and being capable of resonating in a width-extensional resonance mode. In addition, there is at least one anchor suspending the resonator plate to the support structure and an actuator for exciting the width-extensional resonance mode into the resonator plate. According to the invention, the resonator plate is doped to a doping concentration of 1.2*10cmor more and has a shape which, in combination with said doping concentration and in said width-extensional resonance mode, provides the second order temperature coefficient of frequency (TCF) to be 12 ppb/Cor less at least at one temperature. Several practical implementations are presented.

Temperature compensated plate resonator

The invention concerns a micromechanical device and method of manufacturing thereof. The device comprises an oscillating or deflecting element made of semiconductor material comprising n-type doping agent and excitation or sensing means functionally connected to said oscillating or deflecting element. According to the invention, the oscillating or deflecting element is essentially homogeneously doped with said n-type doping agent. The invention allows for designing a variety of practical resonators having a low temperature drift.

Micromechanical devices comprising n-type doping agents

The invention relates to a micromechanical device comprising a semiconductor element capable of deflecting or resonating and comprising at least two regions having different material properties and drive or sense means functionally coupled to said semiconductor element. According to the invention, at least one of said regions comprises one or more n-type doping agents, and the relative volumes, doping concentrations, doping agents and/or crystal orientations of the regions being configured so that the temperature sensitivities of the generalized stiffness are opposite in sign at least at one temperature for the regions, and the overall temperature drift of the generalized stiffness of the semiconductor element is 50 ppm or less on a temperature range of 100&#xb0; C. The device can be a resonator. Also a method of designing the device is disclosed.

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Espoo, Finland

Mika Prunnila