Ulvac, Inc.

Miho Satou

Akira Nakamura

Junichi Nitta

Xiaoli Lu

[Object] To provide a sputtering target with further improved sputtering efficiency, and a method of producing the sputtering target. [Solving Means] In order to achieve the above-mentioned object, a sputtering target according to an embodiment of the present invention is a cobalt target having a sputtering surface and a purity of 99.95 wt % or more. An intensity ratio (I+I)/(I+I+I+I+I+I+I+I) of X-ray diffraction peaks corresponding to a (100) plane, a (002) plane, a (101) plane, a (102) plane, a (110) plane, a (103) plane, a (112) plane, and a (004) plane of a hexagonal close-packed lattice structure along the sputtering surface is 0.85 or more.

Growing community of inventors

Chigasaki, Japan

Miho Satou