Mitsubishi Chemical Corporation

Mitsubishi Rayon Company, Limited

Miho Chujo

Atsushi Yasuda

Tomoya Oshikiri

A copolymer for lithography having a turbidity Th(80) of 1.0 NTU or more and 4.6 NTU or less and a turbidity Tm(80) of 1.0 NTU or more and 3.8 NTU or less, in which this turbidity Th(80) is a turbidity of a PGMEA solution when n-heptane in an amount to be 80% of (X)h is added to this PGMEA solution where (X)h denotes an amount of n-heptane added to have a turbidity of 10 NTU when n-heptane is added to the PGMEA solution containing this copolymer for lithography at 20 wt % with respect to a total mass of this PGMEA solution; and this turbidity Tm(80) is a turbidity of a PGMEA solution when methanol in an amount to be 80% of (X)m is added to this PGMEA solution where (X)m denotes an amount of methanol added to have a turbidity of 5.0 NTU when methanol is added to this PGMEA solution containing this copolymer for lithography at 20 wt % with respect to a total mass of this PGMEA solution.

Copolymer for semiconductor lithography, resist composition, and method for manufacturing substrate

Provided is a copolymer for lithography containing a monomer containing an acid leaving group and a monomer not containing an acid leaving group, in which N(v)/Nis from 1.01 to 1.09 and all of N(v)/N, N(v)/N, and N(v)/Nare from 0.95 to 1.05 when, among five fractions obtained by dividing an eluate providing a peak according to the copolymer in an elution curve obtained by GPC in order of elution so as to have an equal volume, ratios of monomer units containing an acid leaving group among the total monomer units constituting a copolymer included in the respective fractions from the first which is eluted earliest to the fourth are denoted as N(v) mol % to N(v) mol %, respectively, and the ratio of the monomer unit containing an acid leaving group among the total monomer units constituting a copolymer included in the sum of the five fractions is denoted as Nmol %.

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Tokyo, Japan

Miho Chujo