Applied Materials, Inc.

Miguel S Fung

Christopher Dennis Bencher

Ganesh Balasubramanian

Deenesh Padhi

Bok Hoen Kim

Hichem M'Saad

Yue Chen

Xinhai Han

Sudha S Rathi

Yuxiang May Wang

Zhijun Jiang

Mario Dave Silvetti

Daemian Raj Benjamin Raj

Sang H Ahn

Hidehiro Kojiri

Nikhil Sudhindrarao Jorapur

Vu Ngoc Tran Nguyen

Arkajit Roy Barman

Chuan Ying Wang

Thian Choi Lim

Keebum Jung

Lei Zhu

Jose Angelo Olave

A method of forming a film stack with reduced defects is provided and includes positioning a substrate on a substrate support within a processing chamber and sequentially depositing polysilicon layers and silicon oxide layers to produce the film stack on the substrate. The method also includes supplying a current of greater than 5 ampere (A) to a plasma profile modulator while generating a deposition plasma within the processing chamber, exposing the substrate to the deposition plasma while depositing the polysilicon layers and the silicon oxide layers, and maintaining the processing chamber at a pressure of greater than 2 Torr to about 100 Torr while depositing the polysilicon layers and the silicon oxide layers.

Method of forming film stacks with reduced defects

Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an oxygen and carbon containing compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen. In another aspect, the dielectric material forms one or both layers in a dual layer anti-reflective coating.

Nitrogen-free dielectric anti-reflective coating and hardmask

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Sunnyvale, CA, United States of America

Miguel S Fung