Tokyo Electron Limited

Michishige Saito

Kazuya Nagaseki

Shota Kaneko

Tetsuo Yoshida

Akira Koshiishi

Jun Hirose

Masahiro Ogasawara

Taichi Hirano

Takayuki Ishii

Jun Ooyabu

Hiroyuki Ishihara

Hiromitsu Sasaki

Kohji Numata

Chishio Koshimizu

Ryuji Hisatomi

Jun Ookura

Seiki Ishida

Ryoichi Yoshida

Daiki Satoh

Akira Obi

Shingo Koiwa

Shigeru Senzaki

Shuhei Yamabe

Ken Horiuchi

Toshikatsu Wakaki

Hiroshi Suzuki

Hayato Aoyama

Yousuke Nagahata

Koji Ando

Junichi Iwano

A member to be used in a substrate processing apparatus is provided. The member is formed of aluminum containing silicon, and the silicon has a particle diameter of 1 μm or less.

Member, manufacturing method of member and substrate processing apparatus

There is provided a substrate support comprising: a base; a first flow path that opens on a bottom surface of the base at a central portion of the base; a second flow path that surrounds the first flow path and opens on the bottom surface of the base; at least one third flow path communicating with the first flow path and arranged from the central portion toward an outer peripheral portion of the base; and at least one fourth flow path communicating with the second flow path, arranged from the central portion toward the outer peripheral portion of the base, and communicating with the at least one third flow path at the outer peripheral portion of the base.

Substrate support and substrate processing apparatus

A stage includes a first member made of a material having a density of 5.0 g/cmor less, and a second member joined to the first member. The second member is made of a material having a linear expansion coefficient of 5.0×10/K or less and a thermal conductivity of 100 W/mK or more. A flow passage for a temperature control medium is formed in at least one of the first member and the second member.

Stage and substrate processing apparatus

A forming method of a component used in a plasma processing apparatus includes irradiating an energy beam to a source material of the component while supplying the source material based on a surface state of the component.

Forming method of component and substrate processing system

A forming method of a component for use in a plasma processing apparatus includes irradiating, while supplying a source material of a first ceramic and a source material of a second ceramic different from the first ceramic, an energy beam to the source material of the first ceramic and the source material of the second ceramic.

Forming method of component and plasma processing apparatus

A film forming apparatus is disclosed. The apparatus comprises a chamber; an exhaust unit configured to reduce the pressure in the chamber to a predetermined vacuum level; a holder disposed in the chamber and configured to hold a film forming target member on which a film is to be formed; a supply unit configured to supply a film forming material containing silicon to a surface of the film forming target member; and a heat source configured to perform heating at the predetermined vacuum level to melt the supplied film forming material.

Film forming apparatus and method for manufacturing part having film containing silicon

A placing table, on which a substrate is placed, includes a base. The base includes a first path configured to allow a heat transfer medium having a first temperature to flow therein; a first heat insulating layer disposed under the first path; and a seal member disposed under the first heat insulating layer.

Placing table and substrate processing apparatus

A plasma processing apparatus includes: a processing container; an electrode that places a substrate thereon within the processing container; a plasma generation source that supplies plasma into the processing container; a bias power supply that supplies bias power to the electrode; a part exposed to the plasma in the processing container; a DC power supply that supplies a DC voltage to the part; a controller that executes a process including a first control procedure in which a first state in which the DC voltage has a first voltage value and a second state in which the DC voltage has a second voltage value higher than the first voltage value are periodically repeated, and the first voltage value is applied in a partial period in each cycle of a potential of the electrode, and the second voltage value is applied such that the first state and the second state are continuous.

Plasma processing apparatus and control method

A substrate processing apparatus includes a processing vessel; a placing table provided within the processing vessel and configured to place a substrate thereon; and a component disposed between the processing vessel and the placing table, the component constituting an anode. The component has a flow path through which a heat exchange medium flows.

Substrate processing apparatus

In an exemplary embodiment, an upper electrode is disposed in a processing chamber to face a susceptor and provided with a plate-like member and an electrode part. In an exemplary embodiment, the plate-like member is formed with a gas distribution hole that distributes a processing gas used for a plasma processing. The electrode part is formed in a film shape by thermally spraying silicon onto a surface of the plate-like member where an outlet of the gas distribution hole is formed.

Upper electrode and plasma processing apparatus

A high frequency power supply member for supplying high frequency power includes: an inner conductor that forms a hollow; and an outer conductor arranged to surround the inner conductor, wherein a refrigerant flow path is provided inside a wall surface of at least one of the inner conductor and the outer conductor.

High frequency power supply member and plasma processing apparatus

A substrate processing apparatus includes: a first processing chamber; a second processing chamber; a transfer chamber; a frame structure; and an elevating part. Each of the first and the second processing chamber has a main body part and a lid part. The transfer chamber is connected to the first and the second processing chamber and accommodates a transfer unit for transferring the substrate. The frame structure has a pair of column parts and a beam part supported at top portions of the column parts. The elevating part is coupled to the beam part to be moved in a horizontal direction and moves the lid part in the vertical direction. The beam part extends above the first and the second processing chamber and the transfer chamber.

Substrate processing apparatus and maintenance method thereof

A plasma etching method by using a plasma etching apparatus having a depressurizable processing chamber; a lower electrode for mounting thereon a substrate to be processed in the processing chamber; an upper electrode facing the lower electrode in the processing chamber with a plasma generation region formed therebetween; a radio frequency power supply unit for applying a radio frequency power between the upper electrode and the lower electrode to thereby form a radio frequency electric field in the plasma generation region, the method comprising: supplying a first gas including etchant gas to an upper gas inlet to introduce the first gas through the upper electrode into the plasma generation region; and feeding a second gas including dilution gas to a side gas inlet to introduce the second gas through a sidewall of the processing chamber into the plasma generation region.

Plasma etching method

A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate.

Growing community of inventors

Miyagi, Japan

Michishige Saito