Sumitomo Eaton Nova Corporation

Sen Corporation, an Shi and Axcelis Company

Axcelis Technologies, Inc.

Sen Corporation

Michiro Sugitani

Mitsukuni Tsukihara

Mitsuaki Kabasawa

Junichi Murakami

Makoto Sano

Yoshitomo Hidaka

Keiji Okada

Hiroshi Matsushita

Suguru Hirokawa

Fumiaki Sato

Masamitsu Shinozuka

Hiroshi Sogabe

Hiroki Murooka

Genshu Fuse

Masaki Ishikawa

Takanori Yagita

Tetsuya Kudo

Jun Lu

Kouji Inada

Yoshitaka Amano

Hiroshi Kawaguchi

Takashi Kuroda

Hans J Rutishauser

Takashi Nishi

Paul A Loomis

Kazunari Ueda

Yuji Takahashi

Hiroyuki Kariya

Kenji Sawada

Toru Murakami

After formation of a silicon Fin part on a silicon substrate, a thin film including an impurity atom which becomes a donor or an acceptor is formed so that a thickness of the thin film formed on the surface of an upper flat portion of the silicon Fin part becomes large relative to a thickness of the thin film formed to the surface of side wall portions of the silicon Fin part. A first diagonal ion implantation from a diagonal upper direction to the thin film is performed and subsequently a second diagonal ion implantation is performed from an opposite diagonal upper direction to the thin film. Recoiling of the impurity atom from the inside of the thin film to the inside of the side wall portions and to the inside of the upper flat portion is realized by performing the first and second diagonal ion implantations.

Manufacturing method of semiconductor device

A manufacturing method of a semiconductor device includes preparing a semiconductor substrate which is a base substrate of the semiconductor device and which is formed with a concavity and convexity part on the surface of the semiconductor substrate. The method further comprises depositing on the surface of the semiconductor substrate an impurity thin film including an impurity atom which becomes a donor or an acceptor in the semiconductor substrate and performing an ion implantation from a diagonal upper direction to the impurity thin film deposited on the concavity and convexity part of the semiconductor substrate. The method still further comprises recoiling the impurity atom from the inside of the impurity thin film to the inside of the concavity and convexity part by performing the ion implantation.

Embodiments of the invention are directed to a method of controlling a mover device The method includes generating a moving force from a moving force generating unit to move a processing base with respect to a movable base, thereby moving the processing base with respect to a fixed base as a result of the movement of the processing base with respect to the movable base; moving the movable base on the fixed base in the opposite direction to the moving direction of the processing base by virtue of a reaction force caused by the moving force generated from the moving force generating unit to move the processing base, so that the movable base moves in the opposite direction to the moving direction of the processing base on the fixed base. The method further includes controlling the moving velocity of the processing base with respect to the fixed base.

Method of controlling mover device

In an irradiation system with an ion beam/charged particle beam having an energy filter, the energy filter is formed by deflection electrodes and a deflection magnet which can be switchingly used. The deflection magnet has a general window-frame shape and is formed with a hollow portion at its center. The deflection electrodes are installed, along with suppression electrodes, in a vacuum chamber arranged in the hollow portion of the deflection magnet. The deflection electrodes are installed with respect to the deflection magnet such that a deflection trajectory of a beam caused by a magnetic field and a deflection trajectory of a beam caused by an electric field overlap each other. Since the deflection electrodes and the deflection magnet can be switchingly used, the system can deal with a wider range of beam conditions and thus is widely usable.

Irradiation system with ion beam/charged particle beam

A charge compensation device according to this invention is for suppressing charging of a wafer when the wafer is irradiated with a beam from a beam generation source unit. The charge compensation device comprises at least one first arc chamber having at least one first extraction hole and a second arc chamber having at least one second extraction hole faced on the reciprocal swinging beam of the predetermined scan range. A first arc voltage is applied to the first arc chamber to generate first plasma in the first arc chamber. The generated first plasma is extracted from the first arc chamber and introduced into the second arc chamber. Second plasma is produced in the second arc chamber, and second extracted plasma from the second arc chamber forms a plasma bridge between the second extraction hole and the reciprocal swinging beam.

Wafer charge compensation device and ion implantation system having the same

A mover device and an ion implanter apparatus having a processing base that reciprocates at a high speed without undesirable noise and vibration are provided. The mover device includes: a fixed base; a movable base that is linearly movable with respect to the fixed base; a processing base that is linearly movable with respect to the movable base; a main linear motor that generates a moving force to move the processing base with respect to the movable base, thereby moving the processing base with respect to the fixed base; and a velocity control unit that controls the moving velocity of the processing base with respect to the fixed base. In this mover device, the movable base is moved by virtue of a reaction force caused by the moving force to move the processing base.

Mover device and semiconductor manufacturing apparatus and method

The present invention is applied to an ion implanter provided with a vacuum pressure compensation mechanism. The pressure compensation mechanism samples measured beam currents and vacuum pressures in the vicinity of wafers in preliminary implantation and stores function parameters in a memory unit which are obtained by calculating parameters of a predetermined function by fitting the relationship between the measured beam currents and the vacuum pressures. In actual implantation, the pressure compensation mechanism corrects the measured beam current using the function parameters stored as a function of the vacuum pressure, and based on the corrected beam current, the dosage control is performed. In the present invention, an actual beam loss is compensated for based on the estimation from a pressure in the vicinity of the wafers in a region downstream of a mass analysis slit.

Ion implanter and method for controlling the same

In an ion beam line having a mechanism for scanning an ion beam by an electric field or a magnetic field or in an ion beam line having a mechanism for forming a sheet-like or a ribbon-like ion beam, electrons are confined by the use of cusp magnetic fields generated by arranging permanent magnets. In a direction intersecting a beam traveling direction and a beam scanning direction or in a direction intersecting the beam traveling direction and a beam spread direction of the sheet-like or the ribbon-like beam, the electrons are supplied to neutralize electric charges.

Ion beam charge neutralizer and method therefor

An ion beam processing apparatus comprises a beam line vacuum chamber from an ion source to a processing chamber. The apparatus further comprises a beam line structure for transporting ion beam from the ion source through the beam line vacuum chamber to the processing chamber. A mass analysis magnet unit is arranged from the outside in a partial section of the beam line vacuum chamber. An effective magnetic field area of the mass analysis magnet unit is disposed in a partial section of the beam line structure. Continuous cusp field forming magnet apparatuses are arranged at the series of beam line vacuum chamber part of the beam line structure to confine ion beam by forming continuous cusp fields.

Ion beam processing method and apparatus therefor

In an ion implantation apparatus according to the present invention, ions are extracted from an ion source with the aid of extraction electrodes. The ions thus extracted are analyzed in mass by means of a mass analysis magnet apparatus and a mass analysis slit, so that the required ions are implanted in a substrate. Magnets for generating cusp magnetic fields are serially disposed along an ion beam line extending from the front part to the rear part of the mass analysis magnet apparatus.

Ion implantation apparatus capable of increasing beam current

An ion implantation apparatus includes an ion source for generating ions, an extraction electrode for extracting the ions from the ion source by the action of an extraction electric field, and a mass analysis magnet for deflecting or bending the trajectory of an ion beam extracted by the extraction electrode. The ions that have passed through the mass analysis magnet are implanted into a target. The ion implantation apparatus further includes a multi-axis driving mechanism for moving the ion source. The multi-axis driving mechanism changes the relative positional relationship between the ion source and the extraction electrode.

Ion implantation apparatus suited for low energy ion implantation and tuning method for ion source system thereof

An ion injecting apparatus has an ion source, a mass-analyzing magnet, an accelerating/decelerating element, and deflecting elements. The mass analyzing magnet mass-analyzes an ion beam extracted from the ion source. The accelerating/de-celerating element accelerates and decelerates the ion beam at a post-stage. The deflecting elements are arranged between the mass analyzing magnet and the accelerating/decelerating element. Each direction angle of the deflecting element is determined such that a final beam trajectory in the predetermined area before being introduced into a wafer substrate is matched to each other in both an operating mode and a non-operating mode of the deflecting elements.

Ion implantation apparatus

A method and apparatus is provided for controlling the operational parameters of a radio frequency (RF) linear accelerator (linac) (,) in an ion implanter (,). An operator or a higher level computer enters into an input device (,) the desired type of ions, the ionic valence value of ions, the extraction voltage of ion source (,), and the final energy value that is needed. Using internally stored numeric value calculation codes in parameter storage device (,), a control calculation device (,) simulates the ion beam acceleration or deceleration, and the anticipated dispersion of the ion beam, and calculates the RF linac operational parameters of amplitude, frequency and phase for obtaining an optimum transport efficiency. The parameter related to the amplitude is sent from control calculation device (,) to amplitude control device (,) which adjusts the amplitude of the output of RF power supply (,). The parameter related to the phase is sent to phase control device (,), which adjusts the phase of the output of RF power supply (,). The parameter related to the frequency is sent to frequency control device (,). Frequency control device (,) controls the output frequency of RF power supply (,) while it also controls the resonance frequency of RF resonator (,-,) of RF linac (,).

Method and system for optimizing linac operational parameters

A system and method are provided for operating a variable aperture (,) for adjusting the amount of ion beam current passing therethrough in an ion implantation system (,). The system and method comprise means or steps for (i) measuring ion beam current at an implanter location using a current detector (,); (ii) comparing the measured ion beam current with a desired ion beam current; (iii) outputting a control signal (,) based on the comparison of the measured ion beam current with the desired ion beam current; and (iv) adjusting a gap (,), through which through ion beam passes and which is defined by opposing first and second aperture plates (,A,,B), in response to the control signal to control the amount of ion beam current passing therethrough. The current detector (,) provides ion beam current feedback, and a position sensor (,) may be utilized to provide aperture plate (,A,,B) position feedback. The system and method provide a quick, direct, and precise mechanism for effecting significant changes in ion beam current without requiring re-tuning of the source. The gap (,) of the aperture (,) is adjustable in increments of about 5 microns (&mgr;m).

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Ehime, Japan

Michiro Sugitani