Kabushiki Kaisha Toshiba

Toshiba Materials Co., Ltd.

Hitachi, Ltd.

Other

The Tokyo Electric Power Company, Incorporated

Michio Sato

Toshihiro Maki

Yoshiharu Fukasawa

Mitsushi Ikeda

Hidehiko Kuroda

Takashi Hino

Takashi Yamanobe

Yoshiko Tsuji

Masashi Nakatani

Yasuo Kohsaka

Noriaki Yagi

Hiromi Shizu

Manabu Miyatake

Shigeru Kanemoto

Kiyoto Oyagi

Tohru Komatsu

Takashi Nakamura

Kazuo Saito

Hirofumi Nagano

Toshiro Sasaki

Makoto Ochiai

Mikio Izumi

Masaki Yoda

Tsuyoshi Hagiwara

Tadashi Narabayashi

Michitsugu Mori

Kenichi Tezuka

Toshihiro Eguchi

Masanobu Watanabe

Hideaki Tezuka

Takashi Rokutanda

Mitsuhiro Enomoto

Yoichiro Yabe

Hitoshi Sakakida

Tatsuo Yamashita

Yasumi Kitajima

Masahiko Warashina

Takuhisa Kondo

Shuuichi Umezawa

Hajime Obikawa

A base material is composed of a metal or ceramics, and an aluminum nitride coating is formed on an outermost surface thereof. The aluminum nitride coating is formed by impact sintering and contains fine particles having a particle diameter of 1 &#x3bc;m or less. A thickness of the aluminum nitride coating is no less than 10 &#x3bc;m. A film density of the aluminum nitride coating is no less than 90% An area ratio of aluminum nitride particles whose particle boundaries are recognizable existing in a 20 &#x3bc;m&#xd7;20 &#x3bc;m unit area of the aluminum nitride coating is 0% to 90% while an area ratio of aluminum nitride particles whose particle boundaries are unrecognizable is 10% to 100%. Such a component for a plasma apparatus having the aluminum nitride coating can provide a strong resistance to plasma attack and radical attack.

Component for plasma apparatus and method of manufacturing the same

The present invention provides a component for a plasma processing apparatus, the component comprising: a base material; an underlayer covering a surface of the base material; and an yttrium oxide film covering a surface of the underlayer, wherein the underlayer comprises a metal oxide film having a thermal conductivity of 35 W/m&#xb7;K or less, the yttrium oxide film contains at least either particulate portions made of yttrium oxide or non-particulate portions made of yttrium oxide, the particulate portions being portions where a grain boundary demarcating an outer portion of the grain boundary is observed under a microscope, and the non-particulate portions being portions where the grain boundary is not observed under a microscope, the yttrium oxide film has a film thickness of 10 &#x3bc;m or more and a film density of 96% or more, and when a surface of the yttrium oxide film is observed under a microscope, an area coverage ratio of the particulate portions is 0 to 20% in an observation range of 20 &#x3bc;m&#xd7;20 &#x3bc;m and an area coverage ratio of the non-particulate portions is 80 to 100% in the observation range.

Component for plasma processing apparatus and method for manufacturing component for plasma processing apparatus

The present invention provides a plasma etching apparatus componentincludes a base materialand an yttrium oxide coatingformed by an impact sintering process and configured to cover a surface of the base material. The yttrium oxide coatingcontains at least one of particulate portions and non-particulate portions. The yttrium oxide coatinghas a film thickness of 10 &#x3bc;m or above and a film density of 90% or above. The particulate portions have an area coverage ratio of 0 to 80% and the non-particulate portions have an area coverage ratio of 20 to 100%.

Plasma etching apparatus component and manufacturing method for the same

A nuclear reactor vibration surveillance system has a first ultrasonic transducer for transmission, an ultrasonic transmitter, a second ultrasonic transducer for reception, an ultrasonic receiver, a signal processor, and a display unit. The first ultrasonic transducer for transmission is arranged on the outer surface of a reactor pressure vessel and is configured to convert a transmission signal into an ultrasonic pulse signal and allow the ultrasonic pulse to be transmitted to a reactor internal component. The second ultrasonic transducer for reception is arranged on the outer surface of the reactor pressure vessel and is configured to receive a reflected ultrasonic pulse reflected by the reactor internal component and convert the received reflected ultrasonic pulse into a reception signal.

Nuclear reactor vibration surveillance system and its method

The present invention provides a vibration monitoring apparatus that monitors vibration of a jet pump disposed in a reactor pressure vessel using ultrasonic wave, including: an ultrasonic sensor that is attached to an outside the reactor pressure vessel, and transmits and receives ultrasonic wave; a reflector that is mounted on a surface of a riser pipe of the jet pump, and includes a planar reflecting surface that can reflect ultrasonic wave; and a signal processing unit that performs signal processing of the ultrasonic wave transmitted by the ultrasonic sensor, reflected by the reflecting surface of the reflector, and received by the ultrasonic sensor, and measures a vibration amplitude of the riser pipe and calculates a vibration waveform.

Vibration monitoring apparatus and vibration monitoring method

The present invention provides a carbon film coated member comprising: a base material; and a coated film formed on at least part of a surface of the base material, the coated film comprising: a matrix composed of amorphous carbon; and at least one of metal and metal carbide contained in the matrix, wherein an atomic ratio (M/C) of the metal (M) to carbon (C) constituting the coated film is 0.01 to 0.7. According to the above structure, there can be provided a carbon film coated member excellent in low-friction property, wear resistance and durability, and capable of suppressing a dust generation, peeling-off and deterioration of the coated film even if the carbon film coated member is used as semiconductor equipment members such as wafer cassette, dummy wafer, probe pin or the like under severe operating conditions, so that the carbon film coated member would not exert a bad influence onto the resultant semiconductor products.

Carbon film coated member

Disclosed is an ultrasonic Doppler flow measurment system that achieves flow measurement regardless of the temperature of a fluid. A temperature sensoris combined with a pipeto measure the temperature of a fluidA controllercalculates a frequency that will cause cavitation when an ultrasonic transducerexerts an ultrasonic vibration on the fluidon the basis of a temperature measured by the temperature sensorand controls a sinusoidal oscillator

Ultrasonic cavitating apparatus and ultrasonic doppler flow measurement system

A Mo&#x2014;W material for the formation of wirings is discloses which, as viewed integrally, comprises 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage. The Mo&#x2014;W material for wirings is a product obtained by compounding and integrating a Mo material and a W material as by the powder metallurgy technique or the smelting technique or a product obtained by arranging these materials in amounts calculated to account for the percentage composition mentioned above. The Mo&#x2014;W material containing W in a proportion in the range of from 20 to 95% manifests low resistance and, at the same time, excels in workability and tolerance for etchants. The wiring thin film which is formed of the Mo&#x2014;W alloy of this percentage composition is used as address wirings and others for liquid crystal display devices. The Mo&#x2014;W target for the formation of wirings is composed of 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage and allows the Mo&#x2014;W wiring thin film to be produced with high repeatability.

Mo-W material for formation of wiring, Mo-W target and method for production thereof, and Mo-W wiring thin film

A torsional vibration measuring instrument has a plurality of reflecting means () arranged with stipulated intervals along surface of a rotator () of which torsional vibration is to be measured; a pulse light irradiating means () for irradiating a repetitive pulse light beam to the reflecting means; and an outgoing-transmitting means () for transmitting the irradiated pulse light beam. The torsional vibration measuring instrument also has a plurality of transmitting-receiving means () for irradiating the transmitted pulse light beam to the reflecting means, and for receiving reflected pulse light beams which have been reflected by the reflecting means; and an incoming-transmitting means () for transmitting the reflected pulse light beams which have been received. The torsional vibration measuring instrument also has a plurality of detecting means () for detecting the reflected pulse light beams which have been transmitted by the incoming-transmitting means; and a signal processing means () for processing pulse output signals which have been outputted from the detecting means and for calculating torsional vibration frequency of the rotator to be measured.

Torsional vibration measuring instrument

In a method for detecting invalid electronic storage media each storing therein identification information recognized as an invalid electronic storage medium, the individual identification information on the invalid electronic storage media, grouped by hash values, is registered as a list. On the other hand, the individual identification information and hash information are assigned to each of the electronic storage media. The method reads the individual identification information and the group value information in response to a usage request for the electronic storage medium and checks if the individual identification information on the electronic storage medium is registered with the group corresponding to the hash value that was read. If the individual identification information corresponding to the hash value is found, the method judges that the requested electronic storage medium is invalid; if the individual identification information corresponding to the hash value is not found, the method judges that the requested electronic storage medium is valid.

Method for detecting invalid electronic storage media and card system using the method

A component for a vacuum deposition apparatus comprises a component body and a spray deposit formed on a surface of a component body. A spray deposit has surface roughness in which a mean spacing S of tops of local peak of profile is in the range from 50 to 150 &#x3bc;m, and distances to a bottom of profile valley line Rv and to a top of profile peak line are in the ranges from 20 to 70 &#x3bc;m, respectively. Furthermore, a spray deposit has a low hardness coat selected from an Al base spray deposit of Hv 30 (Vickers hardness) or less, a Cu base spray deposit of Hv 100 or less, a Ni base spray deposit of Hv 200 or less, a Ti base spray deposit of Hv 300 or less, a Mo base spray deposit of Hv 300 or less and a W base spray deposit of Hv 500 or less. Such component for a vacuum deposition apparatus may suppress, with stability and effectiveness, peeling of deposition material adhering on a component during deposition. In addition, the number of apparatus cleaning and of exchange of components may be largely reduced. A target comprises a similar spray deposit. A vacuum deposition apparatus is one in which above component for a vacuum deposition apparatus is applied in a holder of a sample to be deposited, a deposition material source holder, a preventive component and so on.

Components for vacuum deposition apparatus and vacuum deposition apparatus therewith, and target apparatus

When a user accesses an IC card system, the user intentionally registers processing or actions necessary for an IC card to an IC card management system, or the system determines a predetermined state to register the processing to the IC card management system. The IC card management system beforehand delivers the actions to an IC card terminal. Thereafter, when the user inserts the IC card of which the necessary actions have been registered to the IC card management system to the IC card terminal, the IC card terminal executes the actions corresponding to the IC card.

Service providing method

A torque measuring device including a light irradiation element for irradiating a light, and a control unit operatively connected to the irradiation element so as to branch the light into a plurality of lights as beams and control a beam diameter of the respective lights so as to irradiate the lights on a surface of a member to be measured. The torque measuring device further includes a plurality of reflectors disposed on the surface of the member to be measured so as to change reflection state of the respective lights, a plurality of detectors for detecting the changes of intensities of the respective reflected lights and generating signals thereof, and a signal processor for processing the generated signals and operating a rotation period on the basis of the generated signals thereby to calculate a torque of the member to be measured.

Device for calculating a torque of a rotating member

A refractory metal silicide target is characterized by comprising a fine mixed structure composed of MSi (where M: refractory metal) grains and Si grains, wherein the number of MSi grains independently existing in a cross section of 0.01 mm of the mixed structure is not greater than 15, the MSi grains have an average grain size not greater than 10 &mgr;m, whereas free Si grains existing in gaps of the MSi grains have a maximum grain size not greater than 20 &mgr;m. The target has a high density, high purity fine mixed structure with a uniform composition and contains a small amount of impurities such as oxygen etc. The employment of the target can reduce particles produced in sputtering, the change of a film resistance in a wafer and the impurities in a film and improve yield and reliability when semiconductors are manufactured.

Refractory metal silicide target, method of manufacturing the target, refractory metal silicide thin film, and semiconductor device

A refractory metal silicide target is characterized by comprising a fine mixed structure composed of MSi,(where M: refractory metal) grains and Si grains, wherein the number of MSi,grains independently existing in a cross section of 0.01 mm,of the mixed structure is not greater than 15, the MSi,grains have an average grain size not greater than 10 &mgr;m, whereas free Si grains existing in gaps of the MSi,grains have a maximum grain size not greater than 20 &mgr;m. The target has a high density, high purity fine mixed structure with a uniform composition and contains a small amount of impurities such as oxygen etc. The employment of the target can reduce particles produced in sputtering, the change of a film resistance in a wafer and the impurities in a film and improve yield and reliability when semiconductors are manufactured.

Growing community of inventors

Yokohama, Japan

Michio Sato