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Michio Niwano

Haruo Yoshida

Yasuhiro Maeda

Nobuo Miyamoto

Michiaki Endo

A substrate treating method and apparatus which can perform in-situ monitoring of surface state of a semiconductor substrate. The substrate treating apparatus comprises substrate treating means for subjecting the substrate to a required treatment, means for condensing infrared radiation emitted by an infrared radiation source onto an outer peripheral part of the substrate and introducing the infrared radiation into the substrate, means for detecting the infrared radiation which has undergone multiple reflection inside the substrate and exited from the substrate, means for analyzing the detected infrared radiation, means for monitoring the surface state of the substrate, and control means for controlling the substrate treating means, based on the monitored surface state of the substrate.

Substrate treating method and apparatus

A surface state monitoring method and apparatus for performing in-situ monitoring of surface states of semiconductor substrates. The apparatus comprises condensing means for condensing infrared radiation to an outer peripheral part of the substrate-to-be-monitored; control means 80 for controlling an incident angle of the infrared radiation condensed by the condensing means ; condensing means for condensing the infrared radiation which has undergone multiple reflection in the substrate-to-be-monitored; detecting means for detecting the infrared radiation condensed by the infrared radiation condensing means , and analyzing means for analyzing the detected infrared radiation detected and measuring contaminants staying on the surfaces of the substrate-to-be-monitored.

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Izumi-ku, Sendai-shi, Miyagi-ken, 981-3222, Japan

Michio Niwano