Hitachi Chemical Company, Ltd.

Michio Mashino

Takayuki Matsuzaki

Tatsuya Sakuta

Shinya Katou

Kouji Komorida

Rie Katou

Kouhei Taniguchi

Teiichi Inada

Michio Uruno

Ryoji Furutani

Maiko Tanaka

Masaki Yamada

Tetsuro Iwakura

There is provided an adhesive sheet for a semiconductor and a dicing tape integrated adhesive sheet for a semiconductor that are each good in cuttability when the sheets are each cut into individual pieces by expansion and are each good in embeddability into irregularities in a wiring board when the sheets are each molded thereto. An adhesive sheet for a semiconductor includes a resin composition containing a high-molecular-weight component and a filler, the breaking elongation of the adhesive sheet before curing is 40% or less at 0&#xb0; C., and the elastic modulus of the adhesive sheet after curing is from 0.1 to 10 MPa at 175&#xb0; C.

Adhesive sheet for semiconductor, and dicing tape integrated adhesive sheet for semiconductor

Flap in an adhesive tape for semiconductor manufacturing

In a wafer processing tape, circular or tongue-shaped notched parts facing the center of an adhesive layer, as seen in a plan view, are formed so as to correspond to a pasting region to a wafer ring to a depth that reaches a release substrate from the side of a base material film. Due to the formation of the notched parts, when a peeling force acts on the wafer processing tape, portions of a tacky material layer and the base material film which are more outward than the notched parts are peeled off first, and a portion that is more inward than the notched parts remains on the wafer ring in a protruding state. Accordingly, a peeling strength between the wafer processing tape and the wafer ring can be increased and the wafer processing tape can be suppressed from being peeled off from the wafer ring during processes.

Tape for processing wafer, method for manufacturing tape for processing

Tape for processing wafer, method for manufacturing tape for processing wafer, and method for manufacturing semiconductor device

In a wafer processing tape, circular or tongue-shaped notched parts facing the center of an adhesive layer, as seen in a plan view, are formed so as to correspond to a pasting region to a wafer ring to a depth that reaches a release base material from the side of a base material film. Due to the formation of the notched parts, when a peeling force acts on the wafer processing tape, portions of a tacky material layer and the base material film which are more outward than the notched parts are peeled off first, and a portion that is more inward than the notched parts remains on the wafer ring in a protruding state. Accordingly, a peeling strength between the wafer processing tape and the wafer ring can be increased. Methods of manufacturing the tape and a semiconductor device are also provided.

Wafer processing tape, method of manufacturing wafer processing tape, and method of manufacturing semiconductor device

The invention provides an adhesive sheet which can be stuck to a wafer at low temperatures of 100&#xb0; C. or below, which is soft to the extent that it can be handled at room temperature, and which can be cut simultaneously with a wafer under usual cutting conditions; a dicing tape integrated type adhesive sheet formed by lamination of the adhesive sheet and a dicing tape; and a method of producing a semiconductor device using them. In order to achieve this object, the invention is characterized by specifying the breaking strength, breaking elongation, and elastic modulus of the adhesive sheet in particular numerical ranges.

Adhesive sheet, dicing tape integrated type adhesive sheet, and method of producing semiconductor device

Adhesive tape for semiconductor manufacturing

An adhesive sheet comprising a release substrate, a substrate film, and a first tacky-adhesive layerplaced between the release substrateand the substrate film, wherein an annular incision D is formed on the release substratefrom the surface of the first tacky-adhesive layerside, the first tacky-adhesive layeris laminated so as to cover the whole inner surface of the incision D in the release substrate, and the incision D has a depth d of less than the thickness of the release substrateand 25 &#x3bc;m or less.

Adhesive sheet and method for manufacturing the same, semiconductor device manufacturing method and semiconductor device

Growing community of inventors

Ichihara, Japan

Michio Mashino