Fujifilm Corporation

Michihiro Shirakawa

Akiyoshi Goto

Keita Kato

Hidenori Takahashi

Masafumi Kojima

Naohiro Tango

Kei Yamamoto

Fumihiro Yoshino

Shuhei Yamaguchi

Naoki Inoue

Hajime Furutani

Kaoru Iwato

Takashi Kawashima

Shohei Kataoka

Tomotaka Tsuchimura

Akinori Shibuya

Atsushi Nakamura

Keiyu Ou

Shoichi Saitoh

Tadahiro Odani

Akihiro Kaneko

Michihiro Ogawa

Kyohei Sakita

Hironori Oka

Mitsuhiro Fujita

Ryo Nishio

Naoya Hatakeyama

Akira Takada

Daisuke Asakawa

Yasuharu Shiraishi

Tetsuya Kamimura

Takayuki Kato

Junichi Ito

Toshiaki Fukuhara

Sou Kamimura

Tsukasa Yamanaka

Wataru Nihashi

Kazunari M Yagi

Hyou Takahashi

Tadashi Oomatsu

Minoru Uemura

Ryosuke Ueba

Kazuhiro Marumo

Naoya Iguchi

Yuko Yoshida

Aina Ushiyama

An actinic ray-sensitive or radiation-sensitive resin composition includes a resin X including a repeating unit derived from a compound including two or more structural moieties consisting of an anionic moiety and a cationic moiety, and a polymerizable group, in which the compound generates an acid including an acidic moiety derived from the anionic moiety in the two or more structural moieties by irradiation with actinic rays or radiation.

Active-light-sensitive or radiation-sensitive resin composition, resist film, pattern formation method, method for manufacturing electronic device, compound, and resin

An actinic ray-sensitive or radiation-sensitive resin composition includes a resin and a compound that generates an acid upon irradiation with actinic rays or radiation, in which an A value determined by Formula (1) is 0.130 or more, and the compound that generates an acid upon irradiation with actinic rays or radiation includes one or more selected from the group consisting of a compound (I) to a compound (III).

Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device

An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition which is capable of forming a pattern having an excellent pattern line width roughness (LWR). In addition, another object of the present invention is to provide: The actinic ray-sensitive or radiation-sensitive resin composition of the present invention includes a resin including a repeating unit derived from a monomer having a salt structure and a repeating unit having a group whose polarity increases through decomposition by the action of an acid,

Actinic-ray-sensitive or radiation-sensitive resin composition, resist film, pattern formation method, and method for manufacturing electronic device

According to the present invention, an actinic ray-sensitive or radiation-sensitive resin composition including a resin P having a repeating unit represented by General Formula (P1) and a compound that generates an acid having a pKa of −1.40 or more upon irradiation with actinic rays or radiation; and a resist film, a pattern forming method, and a method for manufacturing an electronic device, each using the composition, are provided.

An actinic ray-sensitive or radiation-sensitive resin composition includes a resin having a repeating unit having a group in which a phenolic hydroxyl group is protected with an acid-leaving group; a first photoacid generator that generates an acid having a pKa of −2.00 to 2.00, in which in a case where the acid thus generated is a carboxylic acid, a pKa of the carboxylic acid is −2.00 or more and less than 1.00; and a second photoacid generator that generates a carboxylic acid having a pKa of 1.00 or more.

The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition with which a pattern having an excellent pattern collapse suppressing property and excellent LWR performance can be obtained. In addition, the present invention also provides a resist film, a pattern forming method, and a method for manufacturing an electronic device, each regarding the actinic ray-sensitive or radiation-sensitive resin composition. The actinic ray-sensitive or radiation-sensitive resin composition of the present invention includes a resin whose solubility in a developer is changed by the action of an acid, a photoacid generator represented by General Formula (b1), and a solvent, in which the photoacid generator represented by General Formula (b1) is a compound that generates an acid having a pka of 1.0 or less upon irradiation with actinic rays or radiation

A photosensitive composition for EUV light includes a predetermined resin and a photoacid generator, or includes a predetermined resin having a repeating unit having a photoacid generating group, and satisfies Requirements 1 to 3, Requirement 1: The A value determined by Formula (1) is 0.14 or more,A=([H]&#xd7;0.04+[C]&#xd7;1.0+[N]&#xd7;2.1+[O]&#xd7;3.6+[F]&#xd7;5.6+[S]&#xd7;1.5+[I]&#xd7;39.5)/([H]&#xd7;1+[C]&#xd7;12+[N]&#xd7;14+[O]&#xd7;16+[F]&#xd7;19+[S]&#xd7;32+[I]&#xd7;127)&#x2003;&#x2003;Formula(1) Requirement 2: The concentration of solid contents in the photosensitive composition for EUV light is 5.0% by mass or less, Requirement 3: The content of the photoacid generator is 5% to 50% by mass with respect to the total solid content in the photosensitive composition for EUV light.

Photosensitive composition for EUV light, pattern forming method, and method for manufacturing electronic device

The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition that can provide a resist film with excellent sensitivity and a pattern with excellent LER performance, and can suppress pattern collapse during pattern formation. In addition, the present invention also provides a resist film, a pattern forming method, a mask blank with a resist film, a method for producing a photomask, and a method for manufacturing an electronic device, each using the actinic ray-sensitive or radiation-sensitive resin composition. The actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention includes a resin X having a repeating unit A represented by General Formula (I), a repeating unit B having an acid-decomposable group, and a repeating unit C selected from a repeating unit c1 represented by General Formula (II) and the like; a compound Y which is a basic compound or ammonium salt compound whose basicity is reduced upon irradiation with actinic rays or radiation; and a photoacid generator Z which is a compound other than the compound Y. 

Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, mask blank with resist film, method for producing photomask, and method for manufacturing electronic device

A photosensitive composition for EUV light includes a predetermined resin and a photoacid generator, or includes a predetermined resin having a repeating unit having a photoacid generating group, and satisfies Conditions 1 and 2,

An actinic ray-sensitive or radiation-sensitive resin composition contains a resin (C) having a repeating unit represented by Formula (1). A pattern forming method includes a step of forming a film with the actinic ray-sensitive or radiation-sensitive resin composition, and a method of manufacturing an electronic device includes the pattern forming method,  in Formula (1), Z represents a halogen atom, a group represented by ROCH&#x2014;, or a group represented by ROC(&#x2550;O)CH&#x2014;. Rand Reach represent a monovalent substituent. X represents an oxygen atom or a sulfur atom. L represents a (n+1)-valent linking group. R represents a group having a group that is decomposed due to the action of an alkali developer to increase solubility in an alkali developer, n represents a positive integer.

Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, pattern forming method, method of manufacturing electronic device, compound, and resin

The present invention provides a negative tone photosensitive composition for EUV light, capable of forming a pattern, in which occurrence of missing defects is suppressed and pattern collapse is suppressed. The present invention also provides a pattern forming method and a method for manufacturing an electronic device. The negative tone photosensitive composition for EUV light of an embodiment of the present invention includes a resin A having a repeating unit having an acid-decomposable group with a polar group being protected with a protective group that is eliminated by the action of an acid, and a photoacid generator, in which a ClogP value of the resin after elimination of the protective group from the resin A is 1.4 or less, a value x calculated by Expression (1) is 1.2 or more, and the value x calculated by Expression (1) and a value y calculated by Expression (2) satisfy a relationship of Expression (3).

Negative tone photosensitive composition for EUV light, pattern forming method, and method for manufacturing electronic device

An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can accomplish suppression of generation of defects on a pattern and reduction in bridge defects of the pattern at the same time. The pattern forming method of an embodiment of the present invention is a pattern forming method by forming a resist film on a substrate using a resist composition including at least a resin whose polarity increases by the action of an acid, a photoacid generator, and a solvent, exposing the resist film, and then treating the exposed resist film with a treatment liquid to form a pattern, in which the treatment liquid includes two or more organic solvents, a boiling point of at least one organic solvent of the two or more organic solvents is 120&#xb0; C. to 155&#xb0; C., a content of the organic solvent having a boiling point of 120&#xb0; C. to 155&#xb0; C. is 45% by mass or more with respect to the total mass of the treatment liquid, and a difference between the boiling point of the organic solvent having the highest boiling point and the boiling point of the organic solvent having the lowest boiling point among the two or more organic solvents is less than 49&#xb0; C.

Treatment liquid and pattern forming method

A composition for forming an upper layer film is applied onto a resist film formed using an actinic ray-sensitive or radiation-sensitive resin composition, and includes a resin X and a compound A having a radical trapping group. A pattern forming method includes applying an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, applying the composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, exposing the resist film having the upper layer film formed thereon, and developing the exposed resist film using a developer including an organic solvent to form a pattern.

Composition for forming upper layer film, pattern forming method, resist pattern, and method for manufacturing electronic device

One embodiment of the present invention provides a pattern forming method including a step for forming an actinic ray-sensitive or radiation-sensitive film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition, a step for forming an upper layer film on the actinic ray-sensitive or radiation-sensitive film using a composition for forming an upper layer film, a step for exposing a laminate film including the actinic ray-sensitive or radiation-sensitive film and the upper layer film, and a step for developing the exposed laminate film using a developer including an organic solvent. The composition for forming an upper layer film contains a resin (XA), a resin (XB) containing fluorine atoms, a basic compound (XC), and a solvent (XD), and the resin (XA) is a resin not containing fluorine atoms, or in a case where the resin (XA) contains fluorine atoms, the resin (XA) is a resin having a lower content of fluorine atoms than that in the resin (XB), based on a mass.

Pattern forming method, method for manufacturing electronic device, laminate film, and composition for forming upper layer film

A method for producing an electronic device includes the pattern forming method, and an actinic ray-sensitive or radiation-sensitive resin composition for organic solvent development. Specifically, provided is a pattern forming method, including a film forming step of forming a film by an actinic ray-sensitive or radiation-sensitive resin composition, an exposure step of irradiating the film, and a development step of developing the film using a developer containing an organic solvent, in which the composition contains a resin containing a repeating unit having an Si atom and a repeating unit having an acid-decomposable group and a compound capable of generating an acid upon irradiation with actinic rays or radiation, the content of Si atoms in the resin is 1.0 to 30 mass %, and the content of the resin in the total solid content of the composition is 20 mass % or more.

Pattern forming method, method for producing electronic device, and actinic ray-sensitive or radiation-sensitive resin composition for organic solvent development

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Shizuoka, Japan

Michihiro Shirakawa