Versum Materials Us, LLC

Michael T Savo

Xinjian Lei

Manchao Xiao

Mark Leonard O'Neill

Raymond Nicholas Vrtis

Sergei Vladimirovich Ivanov

Robert Gordon Ridgeway

Jianheng Li

Andrew David Johnson

Anupama Mallikarjunan

A method for depositing vanadium-containing films, including vanadium nitride and vanadium oxynitride, that generally includes (i) contacting a substrate with vanadium oxytrichloride vapor in a deposition reactor, (ii) purging any unreacted vanadium oxytrichloride with inert gas, (iii) contacting the substrate with a nitrogen containing reactant in a deposition reactor and (iv) purging any unreacted nitrogen containing reactant with inert gas. Additional steps can be included, for example substrate (v) treatment with plasma to remove residual oxygen from oxynitride film.

Method for depositing vanadium-containing films

Described herein are apparatus comprising one or more silicon-containing layers and a metal oxide layer. Also described herein are methods for forming one or more silicon-containing layers to be used, for example, as passivation layers in a display device. In one particular aspect, the apparatus comprises a transparent metal oxide layer, a silicon oxide layer and a silicon nitride layer. In this or other aspects, the apparatus is deposited at a temperature of 350&#xb0; C. or below. The silicon-containing layers described herein comprise one or more of the following properties: a density of about 1.9 g/cmor greater; a hydrogen content of about 4&#xd7;10cmor less, and a transparency of about 90% or greater at 400-700 nm as measured by a UV-visible light spectrometer.

Barrier materials for display devices

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Bethlehem, PA, United States of America

Michael T Savo