International Business Machines Corporation

Michael Straight Hibbs

Timothy E Neary

Kenneth Christopher Racette

Marie Angelopoulos

Timothy A Brunner

Katherina E Babich

S Jay Chey

James Allan Bruce

Dennis M Hayden

Richard Alan Haight

Alfred Wagner

Orest Bula

Dennis A Schmidt

Jacek G Smolinski

Brian J Grenon

Raymond E Rochefort

J Peter Levin

Kevin Shawn Petrarca

Donald Francis Canaperi

Mahadevaiyer Krishnan

Thomas George Ference

Harold G Linde

William C Leipold

Edward W Conrad

Arpan Pravin Mahorowala

Steven Erik Steen

Rebecca D Mih

Donald W Brouillette

Ronald Lee Mendelson

Robert Neal Lang

Henry J Grabarz

Joshua J Krueger

Steven J Holmes

C Richard Guarnieri

Cameron James Brooks

Barbara Bates Peck

Brent A Anderson

Lars W Liebmann

Robert K Leidy

Alan Edward Rosenbluth

Wayne Martin Moreau

Max Gerald Levy

Paul A Rabidoux

Song Peng

Niranjan Mohanlal Patel

Ahmad D Katnani

Christopher J Progler

Scott Josef Bukofsky

Carlos A Fonseca

David S O'Grady

Christopher Karl Magg

Karen D Badger

Grant N Pealer, Iii

Joseph Edward Gortych

Jaione Tirapu-Azpiroz

Denis Marc Rigaill

Dean Craig Humphrey

Subramian S Iyer

Chrisopher A Spence

William C Joyce

Philip S Flanigan

A reticle carrier for a polishing tool capable of accommodating a reticle includes a base plate with an obverse and reverse surfaces, a retaining ring secured to the obverse surface of the base plate forming a recess defined by the obverse surface of the rigid base plate and internal edges of the retaining ring. A reticle pad supports a reticle in the recess. The base plate and the reticle pad having an array of matching, aligned passageway holes therethrough for exhaustion of air from space between the base plate and a the reticle and for supply of air to that space so a vacuum can retain a the reticle in place on the reticle carrier under vacuum conditions and application of air under pressure can eject a reticle from the reticle carrier.

Reticle carrier

A computer-implemented method is provided for generating an electromagnetic field (EMF) correction boundary layer (BL) model corresponding to a mask, which can include using a computer to perform a method, in which asymmetry factor data is determined from aerial image measurements of a plurality of different gratings representative of features provided on a mask, wherein the aerial image measurements having been made at a plurality of different focus settings. The method may also include determining boundary layer (BL) model parameters of an EMF correction BL model corresponding to the mask by fitting to the asymmetry factor measurements. Alternatively, the asymmetry factor data can be determined from measurements of line widths of photoresist patterns, wherein the photoresist patterns correspond to images cast by a plurality of gratings at a plurality of different defocus distances, and the gratings can be representative of features of a mask.

EMF correction model calibration using asymmetry factor data obtained from aerial images or a patterned layer

A method for manufacturing an optical projection reticle employs a damascene process. First feature recesses are etched into a projection reticle mask plate which is transmissive or transparent. Then feature recesses are tilled with a radiation transmissivity modifying material comprising a partially transmissive material and/or a radiation absorber for absorbing actinic radiation. Sacrificial materials may be added to the recess temporarily prior to filling the recess to provide gaps juxtaposed with the material filling the recess. Thereafter, the sacrificial materials are removed. Then the projection mask is planarized leaving feature recesses filled with transmissivity modifying material, and any gaps desired. The projection mask is planarized while retained in a fixture holding it in place during polishing with a polishing tool and a slurry.

Method of manufacture of damascene reticle

An inspection system uses inspection data biased to compensate for mismatches that occur as a result of using an optical lithography system to print an alternating phase shift mask that operates at a wavelength of light that is different from the wavelength of light that an inspection system uses to inspect the mask for defects.

Alternating phase shift mask inspection using biased inspection data

A phase metrology pattern for attenuating phase masks. The phase error of this pattern can be determined to high accuracy by aerial image measurements. This pattern can be used to create an optical phase standard for calibrating phase metrology equipment for attenuated phase masks, or as a witness pattern on a product mask to verify the phase accuracy of that mask. The pattern includes an effective line to space ratio and can be tested using a microscope or stepper system or can be measured directly using a detector for the 0 order diffraction measurement.

Phase calibration for attenuating phase-shift masks

An automated system for analyzing mask defects in a semiconductor manufacturing process is presented. This system combines results from an inspection tool and design layout data from a design data repository corresponding to each mask layer being inspected with a computer program and a predetermined rule set to determine when a defect on a given mask layer has occurred. Mask inspection results include the presence, location and type (clear or opaque) of defects. Ultimately, a determination is made as to whether to scrap, repair or accept a given mask based on whether the defect would be likely to cause product failure. Application of the defect inspection data to the design layout data for each mask layer being inspected prevents otherwise acceptable wafer masks from being scrapped when the identified defects are not in critical areas of the mask.

Mask defect analysis system

An optical pellicle to protect a photomask from particulate contamination during semiconductor lithography is provided which has enhanced transparency and operational characteristics. The pellicle utilizes alternating layers of a transparent polymer and a transparent inorganic layer to form pellicles which have high transmission properties and high strength. In a preferred pellicle, a three-layer pellicle is provided having a transparent inorganic layer sandwiched between two polymer layers. A five-layer pellicle is also provided with the outer layers and a middle layer being polymer layers and the inner layers an inorganic material. The preferred polymer layer is a perfluorinated polymer such as Teflon&#xae; and the preferred inorganic material is silicon dioxide. The pellicle of the invention provides light transmission of greater than 0.99% at incident light angles up to arcsine 0.45.

Pellicle film optimized for immersion lithography systems with NA&#x3e;1

In a projection apparatus for projecting optical images, an optical mask support stage having a pair of separated arms. Each arm being provided with a respective mask chucking bar that supports a respective edge of a thin glass mask and applies to the respective edge a bending moment away from the center of the mask to reduce or eliminate any gravitational induced sag in the center of the mask thereby improving the quality of the images projected by the apparatus.

Method and apparatus for correcting gravitational sag in photomasks used in the production of electronic devices

A method and apparatus for controlling the thickness of a semiconductor wafer during a backside grinding process are disclosed. The present invention uses optical measurement of the wafer thickness during a backside grinding process to determine the endpoint of the grinding process. Preferred methods entail measuring light transmitted through or reflected by a semiconductor wafer as a function of angle of incidence or of wavelength. This information is then used, through the use of curve fitting techniques or formulas, to determine the thickness of the semiconductor wafer. Furthermore, the present invention may be used to determine if wedging of the semiconductor occurs and, if wedging does occur, to provide leveling information to the thinning apparatus such that a grinding surface can be adjusted to reduce or eliminate wedging.

Wafer thickness control during backside grind

A mask structure and method of quantitatively measuring pellicle degradation in production photomasks by measuring overlay in test structures on the mask. A structure is located in a high transmission region close to a transition region between a low transmission and a high transmission region of the mask such that pellicle degradation impacts the printing of the object. A second structure is located in low transmission region such that the printing of the second structure overlaps the first and provides a measure of pellicle degradation.

In-situ pellicle monitor

The invention provides systems and a method for reducing pellicle distortion. One feature of the invention reduces distortion of a pellicle by providing an airtight mounting structure for coupling a pellicle to a mask; and a port on the mounting structure though which a pressure difference can be created between the interior portion and an exterior environment. Hence, distortion can be reduced by controlling the pressure in the interior portion between the pellicle, the pellicle mounting structure and the mask. Another feature places an aerodynamic fairing adjacent the mask to reduce aerodynamic drag and, hence, suppress turbulent air flow over the pellicle. The features can be used separately or in combination.

Pellicle distortion reduction

An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of optical transmission (0.001% up to 15% at 157 nm) is obtained by this process.

Attenuated embedded phase shift photomask blanks

Growing community of inventors

Westford, VT, United States of America

Michael Straight Hibbs