Asml Holding N.v.

Asml Netherlands B.v.

Svg Lithography Systems, Inc.

Asml Us, Inc.

Michael L Nelson

Justin Lloyd Kreuzer

Stephen Roux

Christopher John Mason

Peter L Filosi

Erik Roelof Loopstra

Raymond Wilhelmus Louis Lafarre

Tammo Uitterdijk

Adrianus Hendrik Koevoets

Michael Andrew Chieda

Geoffrey O'Connor

Arno Jan Bleeker

Harry Sewell

Dominicus Jacobus Petrus Adrianus Franken

Michael Perry

Gregg M Gallatin

Ronald A Wilklow

Jorge S Ivaldi

Eric Brian Catey

Mohamed Swillam

Jacobus Cornelis Gerardus Van Der Sanden

Ronald P Sidor

Andrew Guzman

Muhsin Eralp

Carlo La Fiandra

Jacobus Cornelius Gerardus Van Der Sanden

A metrology system includes a radiation source, an adjustable diffractive element, an optical system, an optical element, and a processor. The radiation source generates radiation. The adjustable diffractive element diffracts the radiation to generate first and second beams of radiation. The first and second beams have first and second different non-zero diffraction orders, respectively. The optical system directs the first and second beams toward a target structure such that first and second scattered beams of radiation are generated based on the first and second beams, respectively. The metrology system adjusts a phase difference of the first and second scattered beams. The optical element interferes the first and second scattered beams at an imaging detector that generates a detection signal. The processor receives and analyzes the detection signal to determine a property of the target structure based on the adjusted phase difference.

Systems and methods for measuring intensity in a lithographic alignment apparatus

A lithographic apparatus includes a clamp () configured to receive an object (). The clamp defines at least one channel () configured to pass a fluid at a first fluid temperature. The lithographic apparatus also includes a chuck () coupled to the clamp. The chuck () defines at least one void () configured to thermally insulate the chuck from the clamp.

Chucks and clamps for holding objects of a lithographic apparatus and methods for controlling a temperature of an object held by a clamp of a lithographic apparatus

A mask inspection system with Fourier filtering and image compare can include a first detector, a dynamic Fourier filter, a controller, and a second detector. The first detector can be located at a Fourier plane of the inspection system and can detect a first portion of patterned light produced by an area of a mask. The dynamic Fourier filter can be controlled by the controller based on the detected first portion of the patterned light. The second detector can detect a second portion of the patterned light produced by the section of the mask and transmitted through the dynamic Fourier filter. Further, the mask inspection system can include a data analysis device to compare the second portion of patterned light with another patterned light. Consequently, the mask inspection system is able to detect any possible defects on the area of the mask more accurately and with higher resolution.

Mask inspection with fourier filtering and image compare

A reflective reticle substantially reduces or eliminates pattern distortion that results from the absorption of EUV radiation while maintaining a reticle thickness consistent with industry standards. The reflective reticle includes a layer of ultra-low expansion (ULE) glass and a substrate of Cordierite having a thermal conductivity substantially larger than that of ULE glass. An aluminum layer is disposed onto a first surface of the ULE glass and a second surface of the ULE glass is polished to be substantially flat and defect-free. The Cordierite substrate can be directly bonded to the aluminum layer using anodic bonding to form the reflective reticle. Alternatively, a first surface of an intermediate Zerodur layer can be bonded to the aluminum layer, and a second aluminum layer can be used to anodically bond the Cordierite substrate to a second surface of the Zerodur layer, thereby forming the reflective reticle.

EUV reticle substrates with high thermal conductivity

An apparatus for changing an intensity distribution of a light within an illumination field includes a structure configured to be positioned within the illumination field so that a first portion of the light within the illumination field impinges upon the structure, where the structure is translucent or opaque to a wavelength of the light. The apparatus also includes an actuator configured to cause a movement of a first portion of the structure so that a second portion of the light within the illumination field impinges upon the structure. The light within the illumination field is produced by a source configured so that a pupil fill of a beam of the light is uncontrolled, but the beam of the light downstream of the structure is substantially telecentric before and after the movement of the first portion of the structure. Related methods are also presented.

Apparatuses and methods for changing an intensity distribution of light within an illumination field without distorting the telecentricity of the light

A lithographic apparatus, a device manufacturing method, and a projection element for use in a lithographic apparatus are disclosed. The lithographic apparatus has a radiation system for providing a pulsed beam of radiation, a patterning device for imparting the beam with a pattern to form a patterned radiation beam, and a projection system having a projection element for projecting the patterned beam onto a target portion of a substrate. The apparatus further comprises an actuator for moving the projection element for shifting the patterned beam that is projected onto the substrate during at least one pulse of the radiation system. This can be done to compensate for a positional error between a substrate table holding the substrate and an aerial image of the projection system. The positional error could occur due to mechanical vibrations in the frame system of the lithographic apparatus.

Lithographic apparatus, device manufacturing method, and a projection element for use in the lithographic apparatus

A focus system that includes a calibration subsystem and a control subsystem. The control subsystem, which includes a control sensor, is in close proximity to the exposing of an image. The calibration subsystem, which includes a calibration sensor and a control sensor, is located remotely from, or off-axis with respect to, the exposing of an image. By separating calibration and control functions, the functional requirements can be separated into two (or more) types of sensors.

Method and system for improving focus accuracy in a lithography system

An apparatus for changing an aggregate intensity of a light within an illumination field of a photolithography system having a blade structure and a first actuator. The blade structure is configured to be positioned along an optical path of the photolithography system between an illumination system and a reticle stage so that, when the illumination system provides the light having the illumination field, the blade structure is substantially at a center of the illumination field and a first portion of the light within the illumination field impinges upon the blade structure. The first actuator is coupled between a first portion of the blade structure and a frame of the photolithography system and is configured to move at least the first portion of the blade structure in a first direction so that a second portion of the light within the illumination field impinges upon the blade structure.

Correcting variations in the intensity of light within an illumination field without distorting the telecentricity of the light

Method and systems for improving focus accuracy in a lithography system

A system for adjusting a deformable mirror including a reaction plate, a plurality of pneumatic actuators coupled to the reaction plate, and a plurality of push-pull flexures coupled on a first end to the pneumatic actuators, and coupled on a second end to the non-reflective side the deformable mirror, the plurality of push-pull flexures being disposed at various locations on the back of the deformable mirror. The respective pairs of push-pull flexures and pneumatic actuators are operated to support and alter the shape of the deformable mirror to allow for correction of a plurality of optical aberrations.

Pneumatic control system and method for shaping deformable mirrors in lithographic projection systems

The present invention provides a grating-grating interferometric wafer alignment system, sensor and method for microlithography. It includes: (1) an electromagnetic radiation source with collimating optics delivering a collimated beam of a coherent single or multiple discrete wavelengths or in some cases broadband electromagnetic radiation; (2) a detector of the intensity of the collimated return electromagnetic radiation; (3) x- and y-oriented independent linear gratings for the mask-mark; (3) a 'checkerboard pattern' grating for the wafer-mark; and (4) software including an algorithm for determining alignment from the return electromagnetic radiation intensity measured as a function of the relative position of the wafer and mask grating, and a means such as a Fourier transform determining phase and amplitude of a known frequency component of the intensity. In one embodiment a laser diode is used and the backscatter from the mask and wafer gratings is returned to the laser diode creating a beat signal used to determine alignment of the mask and wafer. Alignment accuracy is increased and made more tolerant of processing variables such as wafer topography and coatings.

Mask and wafer diffraction grating alignment system wherein the

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West Redding, CT, United States of America

Michael L Nelson