Asml Netherlands B.v.

Infineon Technologies Ag

Lam Research Corporation

Michael Kubis

Arie Jeffrey Den Boef

Maurits Van Der Schaar

Kaustuve Bhattacharyya

Hendrik Jan Hidde Smilde

Richard Johannes Franciscus Van Haren

Patrick Warnaar

Martin Jacobus Johan Jak

Hubertus Johannes Gertrudus Simons

Everhardus Cornelis Mos

Peter Ten Berge

Andreas Fuchs

Henricus Wilhelmus Maria Van Buel

Xing Lan Liu

Omer Abubaker Omer Adam

Christophe David Fouquet

Johannes Marcus Maria Beltman

Irina Lyulina

Remi Daniel Marie Edart

Paul Cornelis Hubertus Aben

Nicole Schoumans

Johannes Catharinus Hubertus Mulkens

Joost Jeroen Ottens

Arno Jan Bleeker

Hugo Augustinus Joseph Cramer

Paul Christiaan Hinnen

Nitesh Pandey

Willem Marie Julia Marcel Coene

Elliott Gerard McNamara

Henricus Johannes Lambertus Megens

Zili Zhou

Murat Bozkurt

Stefan Cornelis Theodorus Van Der Sanden

Olger Victor Zwier

Xiuhong Wei

Erik Jensen

Adrianus Johannes Hendrikus Schellekens

Richard Stephan Wise

Girish Anant Dixit

Franciscus Godefridus Casper Bijnen

Antoine Gaston Marie Kiers

Henricus Petrus Maria Pellemans

Armand Eugene Albert Koolen

Marinus Jochemsen

Jochem Sebastiaan Wildenberg

Nader Shamma

Richard Quintanilha

Peter Hanzen Wardenier

Erik Johannes Maria Wallerbos

Bernardo Kastrup

David Frans Simon Deckers

Wolfgang Helmut Henke

Peter Clement Paul Vanoppen

Martyn John Coogans

Ekaterina Mikhailovna Viatkina

Mark Van Schijndel

Norbert Haase

Stephen Peter Morgan

Velislava Ignatova

Liesbeth Reijnen

Melisa Luca

Joungchel Lee

Bernd Kochan

Juergen Karl

A method of calculating process corrections for a lithographic tool, and associated apparatuses. The method comprises measuring process defect data on a substrate that has been previously exposed using the lithographic tool; fitting a process signature model to the measured process defect data, so as to obtain a model of the process signature for the lithographic tool; and using the process signature model to calculate the process corrections for the lithographic tool.

Inspection method and apparatus and lithographic processing cell

A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.

Metrology method, target and substrate

A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets () formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship () between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P/P). Bias variations between the sub-targets of the pair are equal and opposite (P/P). Overlay (OV) is calculated based on a relative shift (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements () that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.

Metrology method, patterning device, apparatus and computer program

A method including evaluating, with respect to a parameter representing remaining uncertainty of a mathematical model fitting measured data, one or more mathematical models for fitting measured data and one or more measurement sampling schemes for measuring data, against measurement data across a substrate, and identifying one or more mathematical models and/or one or more measurement sampling schemes, for which the parameter crosses a threshold.

Method and apparatus for inspection and metrology

A method, and associated apparatus and computer program, to determine corrections for a parameter of interest, such as critical dimension, of a patterning process. The method includes determining an exposure control correction for an exposure control parameter and, optionally, determining a process control correction for a process control parameter, based upon a measurement of the parameter of interest of a structure, and an exposure control relationship and a process control relationship. The exposure control relationship describes the dependence of the parameter of interest on the exposure control parameter and the process control relationship describes the dependence of the parameter of interest on the process control parameter. The exposure control correction and process control correction may be co-optimized to minimize variation of the parameter of interest of subsequent exposed and processed structures relative to a target parameter of interest.

Method of controlling a patterning process, lithographic apparatus, metrology apparatus lithographic cell and associated computer program

A method including obtaining a measurement and/or simulation result of a pattern after being processed by an etch tool of a patterning system, determining a patterning error due to an etch loading effect based on the measurement and/or simulation result, and creating, by a computer system, modification information for modifying a patterning device and/or for adjusting a modification apparatus upstream in the patterning system from the etch tool based on the patterning error, wherein the patterning error is converted to a correctable error and/or reduced to a certain range, when the patterning device is modified according to the modification information and/or the modification apparatus is adjusted according to the modification information.

Method and apparatus to correct for patterning process error

A method of determining an edge roughness parameter has the steps: () controlling a radiation system to provide a spot of radiation at a measurement position for receiving a substrate; () receiving a measurement signal from a sensor for measuring intensity of a forbidden diffraction order (such as a second order) being diffracted by a metrology target at the measurement position when the metrology target is illuminated by the spot of radiation, the metrology target comprising a repetitive pattern being configured by configuration of a linewidth/pitch ratio (of about 0.5) to control an amount of destructive interference that leads to forbidding of the diffraction order, the sensor being configured to provide the measurement signal based on the measured intensity; and () determining an edge roughness parameter based on the measured intensity of the forbidden diffraction order.

Determining edge roughness parameters

Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The optical system has a first branch leading to a pupil plane imaging sensor and a second branch leading to a substrate plane imaging sensor. A spatial light modulator is arranged in an intermediate pupil plane of the second branch of the optical system. The SLM imparts a programmable pattern of attenuation that may be used to correct for asymmetries between the first and second modes of illumination or imaging. By use of specific target designs and machine-learning processes, the attenuation patterns may also be programmed to act as filter functions, enhancing sensitivity to specific parameters of interest, such as focus.

Metrology method and inspection apparatus, lithographic system and device manufacturing method

A method to determine the usefulness of an alignment mark of a first pattern in transferring a second pattern to a substrate relative to the first pattern already present on the substrate includes measuring the position of the alignment mark, modeling the position of the alignment mark, determining the model error between measured and modeled position, measuring a corresponding overlay error between first and second pattern and comparing the model error with the overlay error to determine the usefulness of the alignment mark. Subsequently this information can be used when processing next substrates thereby improving the overlay for these substrates. A lithographic apparatus and/or overlay measurement system may be operated in accordance with the method.

Method to determine the usefulness of alignment marks to correct overlay, and a combination of a lithographic apparatus and an overlay measurement system

A pattern from a patterning device is applied to a substrate by a lithographic apparatus. The applied pattern includes product features and metrology targets. The metrology targets include large targets and small targets which are for measuring overlay. Some of the smaller targets are distributed at locations between the larger targets, while other small targets are placed at the same locations as a large target. By comparing values measured using a small target and large target at the same location, parameter values measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes while the small targets are distributed within product areas.

Substrate and patterning device for use in metrology, metrology method and device manufacturing method

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Düsseldorf, Germany

Michael Kubis